BPW 34
Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing
Silicon PIN Photodiode; in SMT and as Reverse Gullwing
BPW 34 S BPW 34 S (R18R)
2004-03-10 1
BPW34, BPW34S, BPW34S (R18R)
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm
• Kurze Schaltzeit (typ. 20 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
• BPW 34 S/(R18R): geeignet für Vapor-Phase
Löten und IR-Reflow Löten (JEDEC level 4)
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
BPW 34 Q62702-P73
BPW 34 S Q62702-P1602
BPW 34 S (R18R) Q62702-P1790
Features
• Especially suitable for applications from
400 nm to 1100 nm
• Short switching time (typ. 20 ns)
• DIL plastic package with high packing density
• BPW 34 S/(R18R): suitable for vapor-phase
and IR-reflow soldering (JEDEC level 4)
Applications
• Photointerrupters
• IR remote controls
• Industrial electronics
• For control and drive circuits
2004-03-10 2
BPW34, BPW34S, BPW34S (R18R)
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
BPW 34 S
BPW 34 S (R18R) BPW 34
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 – 40 … + 85 °C
Sperrspannung
Reverse voltage VR32 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotoempfindlichkeit, VR = 5 V
Spectral sensitivity S80 (≥ 50) nA/Ix
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max2004-03-10 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ400 … 1100 nm
Bestrahlungsem pfindl iche Fläche
Radiant sensitive area A7.00 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
L×W
2.65 ×2.65 mm ×mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 (≤ 30) nA
Spektrale Fotoempfindlichke it, λ = 850 nm
Spectral sensitivity Sλ0.62 A/W
Quantenausbeute, λ = 850 nm
Quantum yield η0.90 Electrons
Photon
BPW34, BPW34S, BPW34S (R18R)
2004-03-10 3
Leerlaufspannung, Ev = 1000 Ix
Open-circuit voltage VO365 (≥ 300) mV
Kurzschlußstrom, Ev = 1000 Ix
Short-circuit current ISC 80 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr, tf20 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C072 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
NEP 4.1 ×10– 14
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit D* 6.6 ×1012
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
BPW34, BPW34S, BPW34S (R18R)
2004-03-10 4
Relati ve Sp ectral Sensi ti vi ty
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Chara cter i sti cs
Srel = f (ϕ)
λ
OHF00078
0
rel
S
400
20
40
60
80
%
100
500 600 700 800 900 nm 1100
0
OHF00080
Ι
R
R
V
05 10 15 V 20
1000
2000
3000
4000
pA
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ev), VR = 5 V
Open-Ci r cu it V oltage VO = f (Ev)
Capacitance
C = f (VR), f = 1 MHz, E = 0
E
OHF01066
V
0
10
P
Ι
-1
10 10
1
10
2
10
4
10
0
10
1
10
2
10
34
10
3
10
2
10
1
10
10
0
V
O
µ
AmV
Ι
P
V
O
10
3
lx
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10V
10
20
30
40
50
60
70
80
pF
100
Total Pow er Di ssip ation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
BPW34, BPW34S, BPW34S (R18R)
2004-03-10 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follow s: m m (inc h).
GEOY6643
4.0 (0.157)
3.7 (0.146) 4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5˚
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
BPW 34
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6863
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
±0.2 (0.008)
Chip position
0...0.1
BPW 34 S
2004-03-10 6
BPW34, BPW34S, BPW34S (R18R)
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follow s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be cons idered as assur ed c haracteristics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endangered.
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6916
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)±0.2 (0.008)
0...0.1
Chip position
BPW 34 S (R18R)
