TISP61089BSDR-S - Bourns - Product.Network

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

TISP61089BSD

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

8-SOIC Package (Top View)

*RoHS COMPLIANT

Dual Voltage-Programmable Protectors

- Supports Battery Voltages Down to -155 V

- Low 5 mA max. Gate Triggering Current

- High 150 mA min. Holding Current

Rated for LSSGR ‘1089 Conditions

2/10 Overshoot Voltage Specified

Impulse

Waveshape

'1089 Test ITSP

Section Test #

2/10 4.5.7

4.5.8

1120

10/360 4.5.7 2, 5 30

10/1000 4.5.7 1,3 30

60 Hz Power

Fault Time

'1089 Test ITSM

Section Test #

0.5 s 4.5.12 9 6.5

1 s 4.5.12 3, 4, 8 4.6

2 s 4.5.12 7 3.4

5 s 4.5.12

4.5.13

2, 3 2.3

30 s 4.5.12 6 1.3

900 s

4.5.12

4.5.13

4.5.15/16

1, 2

1, 4, 5 0.73

Element ITM = 100 A, di/dt = 80 A/µs

Diode 10

SCR 12

MD6XBE

NC - No internal connection

Terminal typical application names shown in

parenthesis

8NC

(Ground)

(Gate)

(Tip)

(Ring)

Device Symbol

SD6XAU

Description

The TISP61089BSD is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic

SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The

TISP61089BSD limits voltages that exceed the SLIC supply rail voltage. The TISP61089BSD parameters are specified to allow equipment

compliance with Telcordia GR-1089-CORE, Issue 3 and ITU-T recommendations K.20, K.21 and K.45.

How to Order

Device Package Carrier Order As Marking Code Standard Quantity

TISP61089BSD 8-SOIC Embossed Tape Reeled TISP61089BSDR-S 1089BS 2500

Rated for ITU-T K.20, K.21 and K.45

Waveshape ITSP

Voltage Current

10/700 5/310 40

..................................................UL Recognized Component

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Description (Continued)

Rating Symbol Value Unit

Repetitive peak off-state voltage, VGK =0 V

DRM -170 V

Repetitive peak gate-cathode voltage, VKA =0 V

GKRM -167 V

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

ITSP A

10/1000 µs (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4)

5/320 µs (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 µs)

10/360 µs (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4)

1.2/50 µs (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4) 100

2/10 µs (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4) TJ = 25 °C

120

170

Non-repetitive peak on-state current, 60 Hz (see Notes 1, 2 and 3)

ITSM A

0.5 s 6.5

30 s

900 s

4.6

3.4

2.3

1.3

0.73

Non-repetitive peak gate current,1/2 µs pulse, cathodes commoned (see Notes 1 and 2) IGSM +40 A

Operating free-air temperature range TA-40 to +85 °C

Junction temperature TJ-40 to +150 °C

Storage temperature range Tstg -40 to +150 °C

NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C≤TJ≤85 °C. The surge may be repeated after the device returns

to its initial conditions.

2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both

terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice

the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature.

3. Values for VGG = -100 V. For values at other voltages see Figure 2.

Absolute Maximum Ratings, -40 °C ≤TJ≤ 85 °C (Unless Otherwise Noted)

The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -150 V. The protector gate is

connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will

then track the negative supply voltage and the overvoltage stress on the SLIC is minimized.

Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative

supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition.

As the overvoltage subsides the high holding current of TISP61089BSD SCR helps prevent d.c. latchup.

The TISP61089BSD is intended to be used with a series combination of a 40 Ωor higher resistance and a suitable overcurrent protector.

Power fault compliance requires the series overcurrent element to open-circuit or become high impedance (see Applications Information). For

equipment compliant to ITU-T recommendations K.20 or K.21 or K.45 only, the series resistor value is set by the coordination requirements. For

coordination with a 400 V limit GDT, a minimum series resistor value of 10 Ωis recommended.

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system

operation they are virtually transparent. The TISP61089BSD buffered gate design reduces the loading on the SLIC supply during overvoltages

caused by power cross and induction. The TISP61089BSD is available in 8-pin plastic small-outline surface mount package.

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Recommended Operating Conditions

Electrical Characteristics, TJ= 25 °C (Unless Otherwise Noted)

Component Min Typ Max Unit

CGTISP61089BSD gate decoupling capacitor 100 220 nF

TISP61089BSD series resistor for GR-1089-CORE first-level and second-level surge survival 40 Ω

TISP61089BSD series resistor for GR-1089-CORE intra-building port surge survival 8 Ω

TISP61089BSD series resistor for K.20, K.21 and K.45 coordination with a 400 V primary

protector 10 Ω

Thermal Characteristics

Parameter Test Conditions Min Typ Max Unit

IDOff-state current VD=V

DRM, VGK =0 TJ= 25 °C-5µA

TJ= 85 °C -50 µA

V(BO) Breakover voltage 2/10 µs, ITM =-100A, di/dt = -80A/µs, RS=50Ω, VGG = -100 V V

VGK(BO)

Gate-cathode impulse

breakover voltage

2/10 µs, ITM =-100A, di/dt = -80A/µs, RS=50Ω, VGG = -100 V,

(see Note 4) 12 V

VFForward voltage IF=5A, t

w= 200 µs3V

VFRM

Peak forward recovery

voltage 2/10 µs, IF= 100 A, di/dt = 80 A/µs, RS=50Ω, (see Note 4) 10 V

IHHolding current IT= -1 A, di/dt = 1A/ms, VGG = -100 V -150 mA

IGKS Gate reverse current VGG =V

GK =V

GKRM, VKA =0 TJ= 25 °C-5µA

TJ= 85 °C -50 µA

IGT Gate trigger current IT=-3A, t

p(g) ≥20 µs, VGG = -100 V 5 mA

VGT

Gate-cathode trigger

voltage IT=-3A, t

p(g) ≥20 µs, VGG = -100 V 2.5 V

CKA

Cathode-anode off-

state capacitance f=1MHz, V

d=1V, I

G= 0, (see Note 5) VD= -3 V 100 pF

VD=-48V 50 pF

NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the gate supply

voltage value (VGG).

5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

-112

Parameter Test Conditions Min Typ Max Unit

RθJA Junction to free air thermal resistance TA = 25 °C, EIA/JESD51-3 PCB, EIA/

JESD51-2 environment, PTOT = 1.7 W 120 °C/W

SEPTEMBER 2005 - REVISED MAY 2007

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Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Parameter Measurement Information

Figure 1. Voltage-Current Characteristic

Unless Otherwise Noted, All Voltages are Referenced to the Anode

-v

VGG VD

ITSM

ITSP

V(BO)

I(BO)

Quadrant I

Forward

Conduction

Characteristic

IFSM (= |ITSM |)

IFSP (= |ITSP|)

-i

Quadrant III

Switching

Characteristic PM6XAAA

VGK(BO)

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Thermal Information

Figure 2. Non-Repetitive Peak On-State Current

against Duration

Figure 3. Typical Non-Repetitive Peak On-state Current

against Duration

PEAK NON-RECURRING AC

CURRENT DURATION

t — Current Duration — s

0.01 0.1 1 10 100 1000

ITSM — Peak Non-Recurrent 50 Hz Current — A

0.5

0.6

0.7

0.8

1.5

VGG = -60 V

VGG = -80 V

VGG = -100 V

VGG = -120 V

RING AND TIP TERMINALS:

Equal ITSM values applied

simultaneously

GROUND TERMINAL:

Current twice ITSM value

EIA /JESD51

Environment and

PCB, TA = 25 °C

TI61AF

TYPICAL PEAK NON-RECURRING AC

CURRENT DURATION

t — Current Duration — s

0.01 0.1 1 10 100 1000

ITSM — Peak Non-Recurrent 50 Hz Current — A

0.5

0.6

0.7

0.8

1.5

RING AND TIP TERMINALS:

Equal ITSM values applied

simultaneously

GROUND TERMINAL:

Current twice ITSM value

VGG = -100 V

VGG = -120 V

Typical PCB

Mounting,

TA = 25 °C

VGG = -60 V

VGG = -80 V

TI61DA

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Operation of Ringing SLICs using Multiple Negative Voltage Supply Rails

Figure 4 shows a typical powering arrangement for a multi-supply rail SLIC. VBATL is a lower (smaller) voltage supply than VBATH. With supply

switch S1 in the position shown, the line driver amplifiers are powered between 0 V and VBATL. This mode minimizes the power consumption

for short loop transmission. For long loops and to generate ringing, the driver voltage is increased by operating S1 to connect VBATH. These

conditions are shown in Figure 5.

Figure 4. SLIC with Voltage Supply Switching

LINE

DRIVERS

VBATH

0 V

SLIC

AI6XCC

SUPPLY

SWITCH

LINE VBATL

APPLICATIONS INFORMATION

Figure 5. Driver Supply Voltage Levels

0 V

VBATL

SHORT LOOP

VBATH

LONG LOOP

VDCRING

VSLICG

VPKRING/2

VSLICH

AI6XCD

VBATH

RINGING

VPKRING/2

0 V

Conventional ringing is typically unbalanced ground or battery backed. To minimize the supply voltage required, most multi-rail SLICs use

balanced ringing as shown in Figure 5. The ringing has d.c., VDCRING, and a.c., VPKRING, components. A 70 V r.m.s. a.c. sinusoidal ring signal

has a peak value, VPKRING, of 99 V. If the d.c. component was 20 V, then the total voltage swing needed would be 99 + 20 = 119 V. There are

internal losses in the SLIC from ground, VSLICG, and the negative supply, VSLICH. The sum of these two losses generally amounts to a total of

10 V. This makes a total, VBATH, supply rail value of 119 + 10 = 129 V.

In some cases a trapezoidal a.c. ring signal is used. This would have a peak to r.m.s ratio (crest factor) of about 1.25, increasing the r.m.s. a.c.

ring level by 13 %. The d.c. ring voltge may be lowered for short loop applications.

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

SLIC Parameter Values

Manufacturer INFINEON‡ LEGERITY™‡ Unit

SLIC Series SLIC-P‡ ISLIC™‡

SLIC # PEB 4266 79R241 79R101 79R100

Data Sheet Issue 14/02/2001 -/08/2000 -/07/2000 -/07/2000

Short Circuit Current 110 150 150 150 mA

VBATH max. -155 -104 -104 -104 V

VBATL max. -150 -104 VBATH VBATH V

AC Ringing for: 85 45† 50† 55† V rms

Crest Factor 1.4 1.4 1.4 1.25

VBATH -70 -90 -99 -99 V

VBATR -150 -36 -24 -24 V

R or T Power Max. < 10 ms 10 W

R or T Overshoot < 10 ms TBD TBD -5 5 -10 5 -10 5 V

R or T Overshoot < 1 ms -10 +10 V

R or T Overshoot < 1 µs -10 +30 -10 10 -15 8 -15 8 V

R or T Overshoot < 250 ns -15 15 -20 12 -20 12 V

Line Feed Resistance 20 + 30 50 50 50 Ω

† Assumes -20 V battery voltage during ringing.

‡ Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc. (formerly AMD's Communication Products Division).

Other product names used in this publication are for identification purposes only and may be trademarks of their respective

companies.

The table below shows some details of HV SLICs using multiple negative supply rails.

From the table, the maximum supply voltage, VBATH, is -155 V. In terms of minimum voltage overshoot limits, -10 V and +8 V are needed for

1 µs and -15 V, +12 V are needed for 250 ns. To maintain these voltage limits over the temperature range, 25 °C values of -12 V, +10 V are

needed for 250 ns.

It is important to define the protector overshoot under the actual circuit current conditions. For example, if the series line feed resistor was

40 Ω, R1 in Figure 12, and Telcordia GR-1089-CORE 2/10 and 10/1000 first level impulses were applied, the peak protector currents would be

56 A and 20 A. At the second level, the 2/10 impulse current would be 100 A. Therefore, the protector voltage overshoot should be guaranteed

to not exceed the SLIC voltage ratings at 100 A, 2/10 and 20 A, 10/1000. In practice, as the 2/10 waveshape has the highest current (100 A)

and fastest di/dt (80 A/µs) the overshoot level testing can restricted to the be 2/10 waveshape.

Using the table values for maximum battery voltage and minimum overshoot gives a protection device requirement of -170 V and +12 V from

the output to ground. There needs to be temperature guard banding for the change in protector characteristics with temperature. To cover

down to -40 °C the 25 °C protector minimum values of become -185 V (VDRM) on the cathode and -182 V (VGKS) on the gate.

Gated Protectors

This section covers four topics. Firstly, it is explained why gated protectors are needed. Second, the voltage limiting action of the protector is

described. Third, how the withstand voltages of the TISP61089BSD junctions are set. Fourth, an example application circuit is described.

Purpose of Gated Protectors

Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic SLICs (Subscriber Line Interface

Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. As the SLIC was usually powered

from a fixed voltage negative supply rail, the limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example

of a fixed voltage SLIC protector.

SEPTEMBER 2005 - REVISED MAY 2007

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Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Gated Protectors (Continued)

SLICs have become more sophisticated. To minimize power consumption, some designs automatically adjust the driver supply voltage to a

value that is just sufficient to drive the required line current. For short lines the supply voltage would be set low, but for long lines, a higher

supply voltage would be generated to drive sufficient line current. The optimum protection for this type of SLIC would be given by a protection

voltage which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the SLIC VBATH supply,

Figure 6. This gated (programmable) protection arrangement minimizes the voltage stress on the SLIC, no matter what value of supply voltage.

Figure 6. TISP61089BSD Buffered Gate Protector ('1089 Section 4.5.12 Testing)

Figure 7. Negative Overvoltage Condition Figure 8. Positive Overvoltage Condition

40 Ω

RING

WIRE

TIP

WIRE SLIC

TISP61089BSD

VBATH

220 nF

AI6XCCa

600 Ω

A.C.

GENERATOR

0 - 600 V r.m.s.

SWITCHING MODE

POWER SUPPLY

GENERATOR

SOURCE

RESISTANCE

ISLIC

40 Ω

VBATL

IBATH

Th5

SLIC

PROTECTOR

AI6XAHBa

VBATH

TISP

61089BSD

220 nF

Th5

SLIC

VBATH

SLIC

PROTECTOR

TISP

61089BSD

220 nF

AI6XAIBa

Operation of Gated Protectors

Figure 7 and Figure 8 show how the TISP61089BSD limits negative and positive overvoltages. Positive overvoltages (Figure 8) are clipped by

the antiparallel diode of Th5 and the resulting current is diverted to ground. Negative overvoltages (Figure 7) are initially clipped close to the

SLIC negative supply rail value (VBATH). If sufficient current is available from the overvoltage, then Th5 will switch into a low voltage on-state

condition. As the overvoltage subsides the high holding current of Th5 prevents d.c. latchup. The protection voltage will be the sum of the gate

supply (VBATH) and the peak gate-cathode voltage (VGK(BO)). The protection voltage will be increased if there is a long connection between the

gate decoupling capacitor, C1, and the gate terminal. During the initial rise of a fast impulse, the gate current (IG) is the same as the cathode

current (IK). Rates of 80 A/µs can cause inductive voltages of 0.8 V in 2.5 cm of printed wiring track. To minimize this inductive voltage increase of

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Gated Protectors (Continued)

Figure 9. Protector Fast Impulse Clamping and Switching Waveforms

Time - µs

0.0 0.5 1.0 1.5

Voltage - V

-80

-60

-40

-20

Time - µs

0.0 0.5 1.0 1.5

Current - A

-5

-4

-3

-2

-1

QGS

VBATH

AI6XDE

protection voltage, the length of the capacitor to gate terminal tracking should be minimized. Inductive voltages in the protector cathode wiring

will also increase the protection voltage. These voltages can be minimized by routing the SLIC connection through the protector as shown in

Figure 6.

Figure 9, which has a 10 A/µs rate of impulse current rise, shows a positive gate charge (QGS) of about 0.1 µC. With the 0.1 µF gate decoupling

capacitor used, the increase in gate supply is about 1 V (= QGS/C1). This change is just visible on the -72 V gate voltage, VBATH. But, the

voltage increase does not directly add to the protection voltage as the supply voltage change reaches a maximum at 0.4 µs, when the gate

current reverses polarity, and the protection voltage peaks earlier at 0.3 µs. In Figure 9, the peak clamping voltage (V(BO)) is -77.5 V, an increase

of 5.5 V on the nominal gate supply voltage. This 5.5 V increase is the sum of the supply rail increase at that time, (0.5 V), and the protection

circuit’s cathode diode to supply rail breakover voltage (5 V). In practice, use of the recommended 220 nF gate decoupling capacitor would

give a supply rail increase of about 0.3 V and a V(BO) value of about -77.3 V.

Voltage Stress Levels on the TISP61089BSD

Figure 10 shows the protector electrodes. The package terminal designated gate, G, is the transistor base, B, electrode connection and so is

marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK (off state) and the antiparallel diode

(reverse blocking). This clause covers the necessary testing to ensure the junctions are good.

Testing transistor CB and EB: The maximum voltage stress level for the TISP61089BSD is VBATH with the addition of the short term antiparallel

diode voltage overshoot, VFRM. The current flowing out of the G terminal is measured at VBATH plus VFRM. The SCR K terminal is shorted to

the common (0 V) for this test (see Figure 10). The measured current, IGKS, is the sum of the junction currents ICB and IEB.

SEPTEMBER 2005 - REVISED MAY 2007

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Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Gated Protectors (Continued)

Testing transistor CB, SCR AK off state and diode reverse blocking: The highest AK voltage occurs during the overshoot period of the protector.

To make sure that the SCR and diode blocking junctions do not break down during this period, a d.c. test for off-state current, ID, can be

applied at the overshoot voltage value. To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is shorted

during this test (see Figure 11).

Figure 10. Transistor CB AND EB Verification

VBATH

+ VFRM

TISP

61089BSD AI6XCEc

0 V

B (G)

IEB

ICB

IGKS

Figure 11. Off-State Current Verification

0 V

AI6XCFc

0 V

B (G)

ICB

V(BO)

TISP

61089BSD

ID(I)

ID(I) is the internal SCR value of ID

Summary: Two tests are need to verify the protector junctions. Maximum current values for IGKS and IDare required at the specified applied

voltage conditions.

Figure 12. Typical Application Circuit

TEST

RELAY RING

RELAY SLIC

RELAY

TEST

EQUIP-

MENT RING

GENERATOR

S1a

S1b

R1a

R1b

RING

WIRE

TIP

WIRE Th1

Th2

Th3

Th4

Th5

SLIC

PROTECTOR

RING/TEST

PROTECTION

OVER-

CURRENT

PROTECTION

S2a

S2b

TISP

3xxxF3

7xxxF3

S3a

S3b

AI6XAJBa

VBATH

TISP

61089BSD

220 nF

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Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Application Circuit

Figure 13. '1089 Test Generators

Generic Lightning or AC Test Generator

Z is the fictive

current-limiting

impedance in

each output feed

Output 1

Output 2

Return

Output n

Output n + 1

AI6XCJ

Figure 12 shows a typical TISP61089BSD SLIC card protection circuit. The incoming line conductors, Ring (R) and Tip (T), connect to the relay

matrix via the series overcurrent protection. Fusible resistors, fuses and positive temperature coefficient (PTC) resistors can be used for

overcurrent protection. Resistors will reduce the prospective current from the surge generator for both the TISP61089BSD and the ring/test

protector. The TISP7xxxF3 protector has the same protection voltage for any terminal pair. This protector is used when the ring generator

configuration may be ground or battery-backed. For dedicated ground-backed ringing generators, the TISP3xxxF3 gives better protection as

its inter-conductor protection voltage is twice the conductor to ground value.

Relay contacts 3a and 3b connect the line conductors to the SLIC via the TISP61089BSD protector. The protector gate reference voltage

comes from the SLIC negative supply (VBATH). A 220 nF gate capacitor sources the high gate current pulses caused by fast rising impulses.

LSSGR 1089

GR-1089-CORE, “1089”, covers electromagnetic compatibility and electrical safety generic criteria for US network telecommunication

equipment. It is a module in Volume 3 of LSSGR (LATA (Local Access Transport Area) Switching Systems Generic Requirements, FR-NWT-000064).

In ‘1089 surge and power fault immunity tests are done at two levels. After first-level testing the equipment shall not be damaged and

shall continue to operate correctly. Under second level testing the equipment shall not become a safety hazard. The equipment is permitted to

fail as a result of second-level testing. When the equipment is to be located on customer premises, second-level testing includes a wiring

simulator test, which requires the equipment to reduce the power fault current below certain values.

The following clauses reference the ‘1089 section and calculate the protector stress levels. The TISP61089BSD needs a 40 Ω series resistor to

survive second level surge testing.

‘1089 Section 4.5.5 - Test Generators

The generic form of test generator is shown in Figure 13. It emphasizes that multiple outputs must be independent, i.e. the loading condition of

one output must not affect the waveforms of the other outputs. It is a requirement that the open-circuit voltage and short circuit current

waveforms be recorded for each generator output used for testing. The fictive impedance of a generator output is defined as the peak

opencircuit voltage divided by the peak short-circuit current. Specified impulse waveshapes are maximum rise and minimum decay times. Thus

the 10/1000 waveshape should be interpreted as <10/>1000 and not the usually defined nominal values which have a tolerance.

SEPTEMBER 2005 - REVISED MAY 2007

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Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

‘1089 Section 4.5.5 - Test Generators (Continued)

The exception to these two conditions of independence and limit waveshape values is the alternative IEEE C.62.41, 1.2/50-8/20 combination

wave generator, which may be used for testing in ‘1089 Sections 4.5.7, 4.5.8 and 4.5.9. Here, the quoted waveshape values are nominal with

defined tolerance. The open-circuit voltage waveshape is 1.2 µs ±0.36 µs front time and 50 µs ±10 µs duration. The short-circuit current

waveshape is 8 µs +1.0 µs, -2.5 µs front time and 20 µs +8 µs, -4 µs duration. The generator fictive source impedance (peak open-circuit

voltage divided by peak short-circuit current) is 2.0 Ω±0.25 Ω.

To get the same peak short-circuit currents as the 2/10 generator, for the same peak open-circuit voltage setting, ‘1089 specifies that the

1.2/50-8/20 generator be used with external resistors for current limiting and sharing. When working into a finite resistive load the delivered

1.2/50-8/20 generator current waveshape moves towards the 1.2/50 voltage waveshape. Thus, although the 1.2/50-8/20 delivered peak current

is similar to the 2/10 generator, the much longer current duration means that a much higher stress is imposed on the equipment protection

circuit. This can cause fuses to operate which are perfectly satisfactory on the normal 2/10 generator. Testing with the 1.2/50-8/20 generator

gives higher stress levels than the 2/10 generator and, because it is little used, will not be covered in this analysis.

Figure 14. Longtitudinal (also Called Common Mode) Testing

Figure 15. Transverse (also Called Differential or Metallic) Testing

Test Generator

Output 1 Ring

Return

EUT

(Equipment

Under Test)

Ground

TipOutput 2

AI6XCK

Test Generator

Output 1 Ring

Return

EUT

(Equipment

Under Test)

Ground

TipOutput 2

Test Generator

Output 1 Ring

Return

EUT

(Equipment

Under Test)

Ground

TipOutput 2

AI6XCM

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Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

‘1089 Section 4.5.6 - Test Connections

Table 1. First-Level Surge Currents

Surge

#Waveshape Open-circuit

Voltage

Short-circuit

Current

Tests

Test

Connections Primary

Fitted

Generator

Fictive

Source

Resistance

Ω

TISP61089BSD ITM

Rs = 25 ΩRs = 40 Ω

1 10/1000 600 100 +25, -25 Transverse &

Longitudinal No 6 19 &

2x19 13 &

2x13

2 10/360 1000 100 +25, -25 Transverse &

Longitudinal No 10 29 &

2x29 20 &

2x20

3 10/1000 1000 100 +25, -25 Transverse &

Longitudinal No 10 29 &

2x29 20 & 2x20

4 2/10 2500 500 +10, -10 Longitudinal No 5 2x83 2x56

5 10/360 1000 25 +5, -5 Longitudinal No 40 2x15 2x13

NOTES: 1. Surge 3 may be used instead of Surge 1 and Surge 2.

2. Surge 5 is applied to multiple line pairs up to a maximum of 12.

3. If the equipment contains a voltage-limiting secondary protector, each test is repeated at a voltage just below the threshold of

limiting.

The telecommunications port R and T terminals may be tested simultaneously or individually. Figure 14 shows connection for simultaneous

(longitudinal) testing. Figure 15 shows the two connections necessary to individually test the R and T terminals during transverse testing.

The values of protector current are calculated by dividing the open-circuit generator voltage by the total circuit resistance. The total circuit

resistance is the sum of the generator fictive source resistance and the TISP61089BSD series resistor value. The starting point of this analysis

is to calculate the minimum circuit resistance for a test by dividing the generator open-circuit voltage by the TISP61089BSD rating. Subtracting

the generator fictive resistance from the minimum circuit resistance gives the lowest value of series resistance that can be used. This is repeated

for all test connections. As the series resistance must be a fixed value, the value used has to be the highest value calculated from all the

considered test connections. Where both 10/1000 and 2/10 waveshape testing occurs, the 10/1000 test connection gives the highest value of

minimum series resistance. Unless otherwise stated the analysis assumes a -40 °C to +85 °C temperature range.

‘1089 Section 4.5.7 - First-Level Lightning Surge Testing

Table 1 shows the tests for this section. The peak TISP61089BSD current, ITM, is calculated by dividing the generator open voltage by the sum

of the generator fictive source and the line feed, RS, resistance values. Columns 9 and 10 show the resultant currents for RSvalues of 25 Ω

and 40 Ω. The TISP61089BSD rated current values at the various waveshapes are higher than those listed in Table 1. Used with the specified

values of RS, the TISP61089BSD will survive these tests.

‘1089 Section 4.5.8 - Second-Level Lightning Surge Testing

Table 2 shows the 2/10 test used for this section. Columns 9 and 10 show the resultant currents for RSvalues of 25 Ωand 40 Ω. Used with an

RSof 40 Ω, the TISP61089BSD will survive this test. The 25 Ωvalue of RSis only intended to give first-level (Section 4.5.7) survival. Under

second-level conditions, the peak current will be 2x143 A, which may result in failure of the 2x120 A rated TISP61089B. However, if the testing

is done at or near 25 °C, the TISP61089BSD will survive with an RSvalue of 25 Ωas the 2/10 rating is 170 A at this temperature.

Table 2. Second-Level Surge Current

Surge

#Waveshape

Open-circuit

Voltage

Short-circuit

Current

Tests

Test

Connections

Primary

Fitted

Generator

Fictive

Source

Resistance

Ω

TISP61089BSD ITM

Rs = 25 ΩRs = 40 Ω

1 2/10 5000 500 +1, -1 Longitudinal No 10 2x143 2x100

NOTE: 1. If the equipment contains a voltage-limiting secondary protector, the test is repeated at a voltage just below the threshold of

limiting.

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

‘1089 Section 4.5.9 - Intra-Building Lightning Surge Testing

This test is for network equipment ports that do not serve outside lines. Table 3 shows the 2/10 tests used for this section. Dedicated intra-

building ports may use an RSvalue of 8 Ω. The 8 Ωvalue is set by the intra-building second level a.c. testing of Section 4.5.16. Columns 9, 10

and 11 show the resultant currents for RSvalues of 8 Ω, 25 Ωand 40 Ω. The listed currents are lower than the TISP61089BSD current rating of

2x120 A and the TISP61089BSD will survive these tests.

Table 3. Intra-building Lightning Surge Currents

Surge

#Waveshape

Open-circuit

Voltage

Short-circuit

Current

Tests

Test

Connections

Primary

Fitted

Generator

Fictive

Source

Resistance

Ω

TISP61089BSD ITM

Rs = 8 ΩRs = 25 ΩRs = 40 Ω

1 2/10 800 100 +1, -1 Transverse NA 8 50 24 17

2 2/10 1500 100 +1, -1 Longitudinal NA 15 2x65 2x38 2x27

NOTE: 1. If the equipment contains a voltage-limiting secondary protector, the test is repeated at a voltage just below the threshold of

limiting.

‘1089 Section 4.5.11 - Current-Limiting Protector Testing

Equipment that allows unacceptable current to flow during power faults (Figure 16) shall be specified to use an appropriate current-limiting

protector. The equipment performance can be determined by testing with a series fuse, which simulates the safe current levels of a telephone

cable. If this fuse opens, the equipment allows unacceptable current flow and an external current-limiting protector must be specified. For

acceptable currents, the equipment must not allow current flows for times that would operate the simulator. The wiring simulator fuse current-

time characteristic shall match the boundary of Figure 16. A Bussmann MDQ-16/10 fuse often specified as meeting this requirement, Figure 17.

Figure 16. Wiring Simulator Current-Time Figure 17. MDQ-16/10 Current-Time

t - Current Duration - s

0.01 0.1

Current — A rms

2.5

1 10 100 1000

UNACCEPTABLE

REGION

ACCEPTABLE

REGION

'1089 WIRING SIMULATOR CURRENT

TIME TI6LAG

t - Current Duration - s

0.01 0.1 1 10 100 1000

Current — A rms

2.5

TI6LAH

UNACCEPTABLE

REGION

MDQ-16/10

MDQ-16/10 OPERATING CURRENT

AVERAGE MELT TIME

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

‘1089 Section 4.5.11 - Current-Limiting Protector Testing (Continued)

Table 4. Wiring Simulator Testing

AC Duration

Open-Circuit

RMS Voltage

Short-Circuit

RMS Current

Test

Connections

Primary

Fitted

Source

Resistance

Ω

TISP61089BSD ITM

A (peak)

Rs = 25 ΩRs = 40 Ω

900 0 to 600 0 to 30 Transverse & Longitudinal No 20 0 to 2x19 0 to 2x14

The test generator has a voltage source that can be varied from zero to 600 V rms and an output resistance of 20 Ωto each conductor. Table 4

shows the range of currents conducted by the TISP61089BSD.

‘1089 Section 4.5.12 - First-Level Power Fault Testing

Table 5. First-Level Power Fault Currents

Test

AC Duration

Open-circuit

RMS Voltage

Short-circuit

RMS Current

Tests

Test

Connections

Primary

Fitted

Source

Resistance

Ω

TISP61089BSD ITM

A (peak)

Rs = 25 ΩRs = 40 Ω

1 900 50 0.33 1 Transverse &

Longitudinal No 150 2x0.40 2x0.37

2 900 100 0.17 1 Transverse &

Longitudinal No 600 2x0.23 2x0.22

200

400

600

0.33

0.67

1.00

Transverse &

Longitudinal No 600

2x0.45

2x0.90

2x1.36

2x0.44

2x0.89

2x1.33

4 1 1000 1 60 Longitudinal Yes 1000 2x1.38 2x1.30

5 5 600 0.09 60 Differential No Capacitive 2x0.12 2x0.12

630 600 0.51

Transverse &

Longitudinal No 1200 2x0.69 2x0.68

72 600 2.21

Transverse &

Longitudinal No 273 2x2.85 2x2.71

81 600 3.01

Transverse &

Longitudinal No 200 2x3.77 2x3.54

9 0.5 1000 5 1 Longitudinal Yes 200 2x6.28 2x5.89

NOTES: 1. If the equipment contains a voltage-limiting device or a current-limiting device, tests 1, 2 and 3 are repeated at a level just below

the thresholds of the limiting devices.

2. Test 5 uses a special circuit with transformer coupled a.c. and capacitive feed.

3. Tests 1 through 5 are requirements and the equipment shall not be damaged after these tests.

4. Tests 6 through 9 are desirable objectives and the equipment can be damaged after these tests.

Table 5 shows the nine tests used for this section. The TISP61089BSD will survive these peak current values as they are lower than the

TISP61089BSD current-time ratings.

‘1089 Section 4.5.13 - Second-Level Power Fault Testing for Central Office Equipment

Table 6 shows the five tests used for this section. Columns 9 and 10 show the prospective currents for these tests using RSvalues of 25 Ω and

40 Ω. The two most stressful tests of this section are test 1 and test 2. As shown in Table 6, the peak currents for these tests are 2x17 A and

2x7.7 A respectively. With the exception of test 5, all the other tests require the series overcurrent protection to operate before the

TISP61089BSD current-time ratings are exceeded. In the case of test 2, with an RSof 25 Ω, the overcurrent protection must operate within the

initial a.c. half cycle to prevent damage.

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

‘1089 Section 4.5.13 - Second-Level Power Fault Testing for Central Office Equipment (Continued)

This test, Table 7, is for network equipment located on the customer premises. The purpose is to ensure that the feed wiring does not become

a hazard due to excessive current. This testing is similar to the Section 4.5.11 testing. If the equipment is directly wired, the wiring simulator

described in Section 4.5.11 is replaced by a one-foot section of 26 AWG wrapped in cheesecloth. The equipment fails if an open circuit occurs

or the cheesecloth is damaged. Table 7 shows the test conditions for this section. Columns 7 and 8 show the prospective currents using RS

values of 25 Ωand 40 Ω. For the TISP61089BSD to survive, the series overcurrent protection to operate before the TISP61089BSD current-time

ratings are exceeded.

Table 6. Second-Level Power Fault Currents

Test

AC Duration

Open-circuit

RMS Voltage

Short-circuit

RMS Current

Tests

Test

Connections

Primary

Fitted

Source

Resistance

Ω

TISP61089BSD ITM

A (peak)

Rs = 25 ΩRs = 40 Ω

1 900 120

277 25 1

Transverse &

Longitudinal No 5

2x5.78

2x11

2x3.8

2x7.7

25 600 60 1

Transverse &

Longitudinal No 10 2x24 2x17

35 600 7 1

Transverse &

Longitudinal No 86 2x7.7 2x6.8

4 900 100 to

600

0.37 to

2.2

Transverse &

Longitudinal No 270 2x2.9 2x2.7

5 900 600 0.09 60 Differential No Capacitive 2x0.09 2x0.09

NOTES: 1. If the equipment contains a voltage-limiting device or a current-limiting device, these tests are repeated at a level just below the

thresholds of the limiting devices.

2. Test 5 uses a special circuit with transformer coupled a.c. and capacitive feed.

‘1089 Section 4.5.15 - Second-Level Power Fault Testing for Equipment Located on the Customer Premise

Table 7. Customer Premise Wiring Simulator Testing

AC Duration

Open-circuit

RMS Voltage

Short-circuit

RMS Current

Test

Connections

Primary

Fitted

Source

Resistance

Ω

TISP61089BSD ITM

A (peak)

Rs = 25 ΩRs = 40 Ω

900 0 to 600 0 to 30 Transverse & Longitudinal No 20 0 to 2x19 0 to 2x14

NOTE: 1. If the equipment interrupts the current before the 600 V rms level is reached a second piece of equipment is tested. The second

piece of equipment shall withstand 600 V rms applied for 900 s without causing a hazard.

This test, Table 8, is for network equipment ports that do not serve outside lines. For standard plugable premise wiring, the wiring simulator

fuse shall be used for testing. Where direct wiring occurs, the simulator shall consist of a length of the wire used wrapped in cheesecloth. The

equipment fails if a hazard occurs or a wiring simulator open circuit occurs or the cheesecloth is damaged.

‘1089 Section 4.5.16 - Second-Level Intra-Building Power Fault Testing for Equipment Located on the Customer Premise

Table 8. Second-level Power Fault Currents

Test

AC Duration

Open-circuit

RMS Voltage

Short-circuit

RMS Current

No of

Tests

Test

Connections

Primary

Fitted

Source

Resistance

Ω

TISP61089BSD ITM A (peak)

Rs = 8 ΩRs = 25 ΩRs = 40 Ω

1 900 120 25 1 Transverse &

Longitudinal No 5 2x13 2x5.7 2x3.8

NOTE: 1. If the equipment contains a voltage-limiting device or a current-limiting device, these tests are repeated at a level just below the

thresholds of the limiting devices.

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

‘1089 Section 4.5.16 (Continued)

Figure 18. '1089 Test Current Levels Figure 19. TISP61089BSD Overlay

MAXIMUM RMS CURRENT

TIME

Time - s

0.01 0.1 1 10 100 1000

Maximum RMS Current - A

0.1

0.2

0.3

0.5

0.7

30 AI6XAKB

Second Level

Tests, 40 Ω

Second Level Tests, 25 Ω

First Level

Tests # 1

through 5,

25 Ω & 40 Ω

Objective

First Level

Tests # 6

through 9

Unacceptable

PEAK AC

CURRENT DURATION

t — Current Duration — s

0.01 0.1 1 10 100 1000

Peak 50 Hz / 60 Hz Current — A

0.15

0.2

0.3

0.4

0.5

0.6

0.8

1.5

AI6XDM

Second Level

Tests, 40 Ω

Second Level

Tests, 25 ΩUnacceptable

VGG = -60 V

First Level

Tests # 1

through 5,

25 Ω & 40 ΩVGG = -120 V

Dedicated intra-building ports may use an RSvalue of 8 Ω. The 8 Ωvalue limits the initial current to 13 A, which is within the TISP61089BSD

single cycle rating. For the TISP61089BSD to survive the full 900 s test, the series overcurrent protection has to operate before the

TISP61089BSD current-time ratings are exceeded.

Overcurrent and Overvoltage Protection Coordination

To meet ‘1089, the overcurrent protection must be coordinated with the requirements of Sections 4.5.7, 4.5.8, 4.5.9, 4.5.12, 4.5.13, 4.5.15 and

the TISP61089BSD. The overcurrent protection must not fail in the first level tests of Sections 4.5.7, 4.5.9 and 4.5.12 (tests 1 through 5). Test 6

through 9 of Section 4.5.12 are not requirements. The test current levels and their duration are shown in Figure 18. First level tests have a high

source resistance and the current levels are not strongly dependent on the TISP61089BSD series resistor value.

Second-level tests have a low source resistance and the current levels are dependent on the TISP61089BSD RSresistor value. The two

stepped lines at the top of Figure 18 are for the 25 Ωand 40 Ωseries resistor cases. The unacceptable current region (Section 4.5.11) is also

shown in Figure 18. If current flows for the full second-level test time the unacceptable current region will be entered. The series overcurrent

protector must operate before the unacceptable region is reached.

Fusible overcurrent protectors cannot operate at first level current levels. Thus the permissible low current time-current boundary for fusible

overcurrent protectors is formed by the first-level test currents. Automatically resetable overcurrent protectors (e.g. Positive Temperature

Coefficient Thermistors) may operate during first level testing, but normal equipment working must be restored after the test has ended.

At system level, the high current boundary is formed by the unacceptable region. However, component and printed wiring, PW, current

limitations will typically lower the high current boundary. Although the series line feed resistance, RS, limits the maximum available current in

second-level testing, after about 0.5 s this limitation will exceed the acceptable current flow values.

These three boundaries, first-level, second-level and unacceptable, are replotted in terms of peak current rather than rms current values in

Figure 19. Using a peak current scale allows the TISP61089BSD longitudinal current rating curves (Figure 3) to be added to Figure 19.

Assuming the PW is sized to adequately carry any currents that may flow, the high current boundary for the overcurrent protector is formed by

the TISP61089BSD rated current. Note that the TISP61089BSD rated current curve also depends on the value of gate supply voltage

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Overcurrent and Overvoltage Protection Coordination (Continued)

The overcurrent protector should not allow current-time durations greater than the TISP61089BSD current ratings otherwise the

TISP61089BSD may fail. A satisfactory fusible resistor performance is shown in Figure 20. The line feed resistor (LFR) current-time curve is

above the first level currents and below the TISP61089BSD rated current for VGG > -100 V. This particular curve is for a Bourns® 4B04B-523-400

2 x 40 Ω, 2 % tolerance, 0.5 % matched resistor module. Fusible resistors are also available with integrated thermal fuses or PTC thermistors.

Thermal fuses will cause a rapid drop in the operating current after about 10 s. Figure 20 shows the fused LFR curve for a Bourns® 4B04B-524-

400 2 x 40 Ω, 2 % tolerance, 0.5 % matched resistor module with an integrated thermal fuse links. The Bourns® 4B04B-524-400 allows the

TISP61089BSD to operate down to its full rated voltage of VGG = -155 V. An LFR with integrated PTC thermistors will give an automatically

resetable current limiting function for all but the highest currents.

Figure 20. Line Feed Resistor - with and without Thermal Fuse

PEAK AC

CURRENT DURATION

t — Current Duration — s

0.01 0.1 1 10 100 1000

Peak 50 Hz / 60 Hz Current — A

0.15

0.2

0.3

0.4

0.5

0.6

0.8

1.5

AI6XDKA

First Level

Tests # 1

through 5,

25 Ω & 40 Ω

Fused LFR

LFR

VGG = -60 V

VGG = -120 V

Ceramic PTC thermistors are available in suitable ohmic values to be used as the series line feed resistor RS. Figure 21 overlays a typical

ceramic PTC thermistor operating characteristic. Some of the first level tests will cause thermistor operation. Generally the resistance matching

stability of the two PTC thermistors after power fault switching lightning will meet the required line balance performance.

Ceramic PTC thermistors reduce in resistance value under high voltage conditions. Under high current impulse conditions the resistance can

be less than 50 % of the d.c. resistance. This means that more current than expected will flow under high voltage impulse conditions. The

manufacturer should be consulted on the 2/10 currents conducted by their product under ‘1089 conditions. To keep the 2/10 current below

120 A may need an increase of the PTC thermistor d.c. resistance value to 50 Ωor more. In controlled temperature environments, where the

temperature does not drop below freezing, the TISP61089BSD 2/10 capability is about 170 A, and this would allow a lower value of resistance.

Generally polymer PTC thermistors are not available in sufficiently high ohmic values to be used as the only line feed resistance. To meet the

required resistance value, an addition (fixed) series resistance can be used. Figure 22 overlays a typical polymer PTC thermistor operating

characteristic. Compared to ceramic PTC thermistors, the lower thermal mass of the polymer type will generally give a faster current reduction

time than the ceramic type. However, in this case the polymer resistance value is much less than the ceramic value. For the same current level,

the dissipation in the polymer thermistor is much less than the ceramic thermistor. As a result the polymer thermistor is slower to operate than

the ceramic one.

The resistance stability of polymer PTC thermistors is not as good as ceramic ones. However, the thermistor resistance change will be diluted

by additional series resistance. If a SLIC with adaptive line balance is used, thermistor resistance stability may not be a problem. Polymer PTC

thermistors do not have a resistance decrease under high voltage conditions.

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP61089BSD High Voltage Ringing SLIC Protector

Overcurrent and Overvoltage Protection Coordination (Continued)

Figure 21. Ceramic PTC Thermistor Figure 22. Polymer PTC Thermistor

PEAK AC

CURRENT DURATION

t — Current Duration — s

0.01 0.1 1 10 100 1000

Peak 50 Hz / 60 Hz Current — A

0.15

0.2

0.3

0.4

0.5

0.6

0.8

1.5

AI6XDIA

Ceramic PTC

Thermistor

First Level

Tests # 1

through 5,

25 Ω & 40 Ω

VGG = -60 V

VGG = -120 V

PEAK AC

CURRENT DURATION

t — Current Duration — s

0.01 0.1 1 10 100 1000

Peak 50 Hz / 60 Hz Current — A

0.15

0.2

0.3

0.4

0.5

0.6

0.8

1.5

AI6XDJA

Polymer PTC

Thermistor

First Level

Tests # 1

through 5,

25 Ω & 40 Ω

VGG = -60 V

VGG = -120 V

SEPTEMBER 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.

“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.

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