52MT120 - International Rectifier

55 A

90 A

110 A

THREE PHASE CONTROLLED BRIDGE

Bulletin I27503 08/97

MT..KB SERIES

Power Modules

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53MT.KB 93MT.KB 113MT.KB

Parameters 52MT.KB 92MT.KB 112MT.KB Units

51MT.KB 91MT.KB 111MT.KB

IO55 90 110 A

@ TC85 85 85 °C

IFSM @ 50Hz 390 950 1130 A

@ 60Hz 410 1000 1180 A

I2t @ 50Hz 770 4525 6380 A2s

@ 60Hz 700 4130 5830 A2s

I2√t 7700 45250 63800 A2√s

VRRM range 800 to 1600 V

TSTG range - 40 to 125 °C

TJrange - 40 to 125 °C

Major Ratings and Characteristics

Features

Package fully compatible with the industry standard INT-A-pak

power modules series

High thermal conductivity package, electrically insulated case

Outstanding number of power encapsulated components

Excellent power volume ratio

4000 VRMS isolating voltage

UL E78996 approved

Description

A range of extremely compact, encapsulated three phase

controlled bridge rectifiers offering efficient and reliable

operation. They are intended for use in general purpose

and heavy duty applications.

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53-93-113MT..KB Series

Bulletin I27503 08/97

53MT.KB 93MT.KB 113MT.KB

Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions

51MT.KB 91MT.KB 111MT.KB

IOMaximum DC output current 55 90 11 0 A 120° Rect conduction angle

@ Case temperature 85 85 85 °C

ITSM Maximum peak, one-cycle 3 9 0 9 5 0 1130 A t = 10ms No voltage

forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied

on state surge current 33 0 80 0 95 0 t = 10ms 100% VRRM

345 840 1000 t = 8.3ms reapplied Initial

I2t Maximum I2t for fusing 770 4525 6380 A2s t = 10ms No voltage TJ = TJ max.

700 4130 5830 t = 8.3ms reapplied

540 3200 4510 t = 10ms 100% VRRM

500 2920 4120 t = 8.3ms reapplied

I2√t Maximum I2√t for fusing 7700 45250 63800 A2√s t = 0.1 to 10ms, no voltage reapplied

VT(TO)1 Low level value of threshold 1.17 1.09 1.04 V (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.

voltage

VT(TO)2 High level value of threshold 1.45 1.27 1.27 (I > π x IT(AV)), @ T J max.

voltage

rt1 Low level value on-state 12.40 4.10 3.93 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.

slope resistance

rt2 High level value on-state 11.04 3.59 3.37 (I > π x I T(AV)), @ TJ max.

slope resistance

VTM Maximum on-state voltage drop 2.68 1.65 1.57 V Ipk = 150A, TJ = 25°C

tp = 400µs single junction

di/dt Max. non-repetitive rate 150 A/µs TJ = 25oC, from 0.67 VDRM, I TM = π x I T(AV),

of rise of turned on current Ig = 500mA, tr < 0.5 µs, tp > 6 µs

IHMax. holding current 200 TJ = 25oC, anode supply = 6V,

mA resistive load, gate open circuit

ILMax. latching current 400 TJ = 25oC, anode supply = 6V, resistive load

Forward Conduction

Voltage VRRM, maximum VRSM, maximum VDRM, max. repetitive IRRM/IDRM max.

Type number Code repetitive peak non-repetitive peak peak off-state voltage @ TJ = 125°C

reverse voltage reverse voltage gate open circuit

VV VmA

80 800 900 800

100 1000 1100 1000

53/52/51MT..KB 120 1200 1300 1200 10

140 1400 1500 1400

160 1600 1700 1600

80 800 900 800

93/92/91MT..KB 100 1000 1100 1000

113/112/111MT..KB 120 1200 1300 1200 20

140 1400 1500 1400

160 1600 1700 1600

ELECTRICAL SPECIFICATIONS

Voltage Ratings

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53-93-113MT..KB Series

Bulletin I27503 08/97

53MT.KB 93MT.KB 113MT.KB

Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions

51MT.KB 91MT.KB 111MT.KB

VINS RMS isolation voltage 4000 V TJ = 25oC all terminal shorted

f = 50Hz, t = 1s

dv/dt Max. critical rate of rise 50 0 V/µs TJ = TJ max., linear to 0.67 V DRM,

of off-state voltage (*) gate open circuit

Blocking

(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.

Triggering

53MT.KB 93MT.KB 113MT.KB

Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions

51MT.KB 91MT.KB 111MT.KB

PGM Max. peak gate power 10 W TJ = TJ max.

PG(AV) Max. average gate power 2.5

IGM Max. peak gate current 2.5 A

-VGT Max. peak negative 10 V

gate voltage

VGT Max. required DC gate 4.0 V TJ = - 40°C

voltage to trigger 2.5 TJ = 25°C Anode supply = 6V, resistive load

1.7 TJ = 125°C

IGT Max. required DC gate 270 TJ = - 40°C

current to trigger 150 mA TJ = 25°C Anode supply = 6V, resistive load

80 TJ = 125°C

VGD Max. gate voltage 0.25 V @ TJ = TJ max., rated VDRM applied

that will not trigger

IGD Max. gate current 6 mA

that will not trigger

Thermal and Mechanical Specifications

53MT.KB 93MT.KB 113MT.KB

Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions

51MT.KB 91MT.KB 111MT.KB

TJMax. junction operating -40 to 125 °C

temperature range

Tstg Max. storage temperature -40 to 125 °C

range

RthJC Max. thermal resistance, 0.18 0.14 0.12 K/W DC operation per module

junction to case 1.07 0.86 0.70 DC operation per junction

0.19 0.15 0.12 120° Rect condunction angle per module

1.17 0.91 0.74 120° Rect condunction angle per junction

RthCS Max. thermal resistance, 0.03 K/W Per module

case to heatsink Mounting surface smooth, flat an greased

T Mounting to heatsink 4 to 6 Nm

torque ± 10% to terminal 3 to 4

wt Approximate weight 225 g

A mounting compound is recommended and the

torque should be rechecked after a period of 3

hours to allow for the spread of the compound.

Lubricated threads.

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53-93-113MT..KB Series

Bulletin I27503 08/97

123

1- Current rating code: 5 = 55 A (Avg)

9 = 90 A (Avg)

11 = 110 A (Avg)

2- Circuit configuration code: 3 = Full-controlled bridge

2 = Positive half-controlled bridge

1 = Negative half-controlled bridge

3- Essential part number

4- Voltage code: Code x 10 = VRRM (See Voltage Ratings Table)

5- Generation II

6- Critical dv/dt: None = 500V/µs (Standard value)

S90 = 1000V/µs (Special selection)

Device Code

Ordering Information Table

5 6

11 3 MT 160 K B S90

Sinusoidal conduction @ T J max. Rectangular conduction @ TJ max.

Devices Units

180o120o90o60o30o180o120o90o60o30o

53/52/51MT.KB 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 K/W

93/92/91MT.KB 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100

113/112/111MT.KB 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

NOTE: To order the Optional Hardware see Bulletin I27900

negative half-controlled bridge

(51, 91, 111MT..KB)

positive half-controlled bridge

(52, 92, 112MT..KB)

full-controlled bridge

(53, 93, 113MT..KB)

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53-93-113MT..KB Series

Bulletin I27503 08/97

Outline Table (with optional barriers)

All dimensions in millimeters (inches)

Outline Table (without optional barriers)

All dimensions in millimeters (inches)

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53-93-113MT..KB Series

Bulletin I27503 08/97

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Fig. 2 - Forward Voltage Drop Characteristics

Fig. 3 - Total Power Loss Characteristics

Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 1 - Current Ratings Characteristic

100

110

120

130

0 102030405060

Maximu m Allowable Case Tempera tur e (°C)

Total Output Cur rent (A )

120°

(Rect)

53MT..KB Series

100

1000

01234567

T = 25°C

Instantaneous On-s ta te Current (A)

In stant aneous On-st ate Voltage (V)

53M T..KB Series

Per Junction

T = 1 25°C

0 25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

0.3 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/W

R = 0.05 K/W - Delta R

thSA

0.12 K/W

0.2 K/W

0.4 K/W

100

120

140

160

180

200

220

0 5 10 15 20 25 30 35 40 45 50 55

Total O utput C urr e nt (A)

M aximum To tal Powe r Loss (W )

120°

(Rect)

53MT..KB Series

T = 12 5°C

150

200

250

300

350

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave On-state Current ( A)

53MT..KB Series

Pe r Junc tion

Initial T = 125°C

@ 6 0 Hz 0.0083 s

@ 5 0 Hz 0.0100 s

A t Any Rated Load Condition And W ith

Rated V Applied Following Surge.

RRM J

150

200

250

300

350

400

0.01 0.1 1

Peak Half Sine Wave On- sta te Current (A )

P ulse T rain Du ration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

53MT..KB Series

Per Junction

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53-93-113MT..KB Series

Bulletin I27503 08/97

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Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Total Power Loss Characteristics

Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current

Fig. 6 - Current Ratings Characteristic

100

110

120

130

0 20406080100

Maximum Allowable Case Temperature (°C)

T otal Output Current (A )

120°

(Rect)

93MT..KB Series

100

1000

0.511.522.533.54

T = 25°C

I nstan taneous On-state Curr ent (A)

In stant aneous On-state V oltage ( V)

93MT..KB Series

P er J unction

T = 1 25°C

0 25 50 75 100 125

Maximum Allowable Am bient Temperature (°C)

0.3 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/W

R = 0.05 K/W - Delta R

thSA

0.2 K/W

0.12 K/W

0.4 K/W

100

150

200

250

300

0 102030405060708090

T otal O utput Curr ent (A )

Maximum Total Power Loss (W)

120°

(Rect)

93M T..KB Series

T = 125°C

400

450

500

550

600

650

700

750

800

850

110100

N umber Of E qu al Am p litude H al f C y cle Curren t P ulses (N )

Peak Ha lf S ine W a ve O n-s tate Cu rren t (A )

93MT..KB Series

Per Junction

At A ny Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

300

400

500

600

700

800

900

1000

0.01 0.1 1

Peak Half Sine Wave On- sta te Current (A )

P ulse Tra in D ur ation (s)

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

93MT..KB Series

Per Junction

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

Maximum Non Repetitive Surge Current

RRM

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53-93-113MT..KB Series

Bulletin I27503 08/97

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Fig. 12 - Forward Voltage Drop Characteristics

Fig. 13 - Total Power Loss Characteristics

Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current

Fig. 11 - Current Ratings Characteristic

100

110

120

130

0 20406080100120

Maximum Allowable Case Temperature (°C)

T otal Output Current (A )

120°

(Rect)

11 3M T..KB Seri es

100

1000

0.511.522.533.54

T = 25°C

I nstantaneous On-state Cur ren t ( A)

I nstantaneous On-s tate Voltage (V)

113MT..KB Series

P er Ju nction

T = 125°C

0 25 50 75 100 125

Maximum Allowable Am bient Temperature (°C)

0.3 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/W

R = 0.05 K/W - Delta R

thSA

0.12 K/W

0.4 K/W

0.2 K/W

100

150

200

250

300

350

0 102030405060708090100110

T otal Output Cu rrent (A )

Max imu m Total Power Loss (W)

120°

(Rect)

113MT..KB Series

T = 125 °C

400

500

600

700

800

900

1000

1 10 100

Num ber Of Equal Amplitude Half Cycle Current Pulses (N)

A t Any Rated Load Condition And With

Rated V A pplied Following Surge.

RRM

Peak H a l f Si ne Wave On- state Cur re nt (A)

113MT..KB Series

P er J unction

Initial T = 125°C

@ 60 Hz 0.0 083 s

@ 50 Hz 0.0 100 s

400

500

600

700

800

900

1000

1100

1200

0.01 0.1 1

Peak Half Sine Wave On- sta te Current (A )

P ulse T rain Du ration (s)

Versus Pulse Train Duration. Control

Of Conduction May Not B e Maintained.

11 3M T..KB Series

P er J unction

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

Maximum Non Repetitive Su rge Cur rent

RRM

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53-93-113MT..KB Series

Bulletin I27503 08/97

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Fig. 16 - Thermal Impedance ZthJC Characteristics

Fig. 17 - Gate Characteristics

0.1

100

0.001 0.01 0.1 1 10 100 1000

(b) (a)

Rectangular gate pulse

(4) (3) (2) (1)

(1) PG M = 10 0 W , t p = 500 µs

(2) PGM = 5 0 W, tp = 1 ms

(3) PGM = 20 W, tp = 25 ms

(4) PGM = 1 0 W, tp = 5 ms

In s tantaneous Ga te Cur rent (A)

In s tan tane ous Gate V oltag e ( V)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

VGD IGD Fre quency L imite d by P G(A V)

rated di/dt: 20 V, 30 ohm s

tr = 0.5 µs, tp >= 6 µ s

<= 30% rated di/dt: 20 V, 65 o hms

tr = 1 µ s, tp >= 6 µs

a) Recommended load line for

b) Recomm ended load line for

53/ 93/ 113MT ..KB Series

0.001

0.01

0.1

0.001 0.01 0.1 1 10

S quar e Wav e Pu lse Du ration (s)

thJC

Transient Thermal Impedance Z (K/W)

P er Ju nction

53MT..KB Series

113MT..KB Series

93MT..KB Series

Steady State Value

R = 1.07 K /W

R = 0.86 K /W

R = 0.70 K /W

(D C O per ation )

thJC

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