Ordering number : ENN7502 2SK3702 N-Channel Silicon MOSFET 2SK3702 DC / DC Converter Applications Features * * * Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2063A [2SK3702] 4.5 2.8 5.6 18.1 16.0 3.2 3.5 7.2 10.0 2.4 14.0 1.6 1.2 0.7 0.75 1 2 3 2.55 1 : Gate 2 : Drain 3 : Source 2.4 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta=25C Parameter Symbol 2.55 SANYO : TO-220ML Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS 20 V ID 18 A Drain Current (DC) Drain Current (Pulse) IDP PW10s, duty cycle1% V 72 A 2.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Tc=25C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=9A Ratings min typ Unit max 60 V 1 10 1.2 8 Marking : K3702 2.6 12 A A V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71003 TS IM TA-100558 No.7502-1/4 2SK3702 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=9A, VGS=10V ID=9A, VGS=4V Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 775 Output Capacitance 125 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 105 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 75 ns tf See specified Test Circuit. 70 ns Turn-OFF Delay Time Fall Time Conditions min typ Unit max 42 55 m 60 85 m Total Gate Charge Qg VDS=30V, VGS=10V, ID=18A 19 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=18A 2.5 nC Gate-to-Drain "Miller" Charge Qgd VDS=30V, VGS=10V, ID=18A 4.1 Diode Forward Voltage VSD IS=18A, VGS=0 nC 0.98 1.2 V Switching Time Test Circuit VDD=30V VIN 10V 0V ID=9A RL=3.33 VIN D VOUT PW=10s D.C.1% G 2SK3702 50 S 15 10 VGS=3V C 25 10 C C 25 5 0 Tc =7 5 5 15 C 4V 20 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 4.5 5.0 IT06197 0 1 2 --2 5 Drain Current, ID -- A 25 Tc= 25 30 C C V 6V 10 VDS=10V 8V 35 Drain Current, ID -- A ID -- VGS 30 Tc=25C 75 ID -- VDS 40 --25 P.G 3 4 Gate-to-Source Voltage, VGS -- V 5 6 IT06198 No.7502-2/4 2SK3702 RDS(on) -- VGS 120 100 80 Tc= 75C 60 25C --25C 40 20 0 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 60 40 20 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 IT06200 yfs -- ID VDS=10V 3 2 25 5C C 10 -2 =- Tc 7 75 C 5 3 2 1.0 --25 0 25 50 75 100 125 3 2 150 5 7 2 1.0 3 5 7 VDD=30V VGS=10V 7 Switching Time, SW Time -- ns 5 Tc= 75C 25C --25C 1.0 7 5 3 2 0.1 7 5 3 2 3 IT06202 SW Time -- ID 1000 VGS=0 10 7 5 3 2 2 10 Drain Current, ID -- A IT06201 IF -- VSD 100 7 5 3 2 3 2 td(off) 100 7 tf 5 3 tr 2 td(on) 10 7 5 0.1 0.01 0 0.3 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD -- V 5 7 1.0 Gate-to-Source Voltage, VGS -- V 7 5 3 2 Coss Crss 3 5 7 10 2 3 5 7 100 IT06204 VDS=30V ID=18A 9 Ciss 2 VGS -- Qg 10 f=1MHz 100 3 Drain Current, ID -- A 2 1000 2 IT06203 Ciss, Coss, Crss -- VDS 3 Ciss, Coss, Crss -- pF --25 Case Temperature, Tc -- C Forward Transfer Admittance, yfs -- S Cutoff Voltage, VGS(off) -- V =4V GS V , 9A I D= =10V , VGS A 9 I D= 80 5 Case Temperature, Tc -- C Forward Current, IF -- A 100 IT06199 VDS=10V ID=1mA 0 --50 120 0 --50 10 VGS(off) -- Tc 2.5 RDS(on) -- Tc 140 ID=9A Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 8 7 6 5 4 3 2 1 7 0 5 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 30 IT06205 0 5 10 15 Total Gate Charge, Qg -- nC 20 IT06206 No.7502-3/4 2SK3702 ASO IDP=72A Drain Current, ID -- A 100 7 5 <10s 10 s 10 3 2 ID=18A DC 3 2 0m ms s op era Operation in this area is limited by RDS(on). 1.0 7 5 s 10 10 3 2 0 s 1m 10 7 5 tio n Tc=25C Single pulse 0.1 0.1 2 3 2.0 1.5 1.0 0.5 0 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT06207 0 20 40 60 80 100 120 140 Ambient Tamperature, Ta -- C 160 IT06208 PD -- Tc 25 Allowable Power Dissipation, PD -- W PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 2 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT06209 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2003. Specifications and information herein are subject to change without notice. PS No.7502-4/4