BCP68
1 Jun-29-2001
NPN Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP69 (PNP)
VPS05163
123
4
Type Marking Pin Configuration Package
BCP68
BCP68-10
BCP68-16
BCP68-25
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter Symbol UnitValues
VCEO 20Collector-emitter voltage V
Collector-emitter voltage V25
VCES
VCBO
Collector-base voltage 25 V
Emitter-base voltage VEBO 5
IC1 ADC collector current
Peak collector current ICM 2
Base current IBmA100
IBM 200Peak base current W1.5
Ptot
Total power dissipation, TS = 124 °C
Junction temperature 150
Tj°C
Tst
g
-65 .. 150Storage temperature
Thermal Resistance
Junction - soldering point1) RthJS
17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCP68
2 Jun-29-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0 V(BR)CEO 20 - - V
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 V(BR)CES 25 - -
Collector-base breakdown voltage
IC = 10 µA, IB = 0 V(BR)CBO 25 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 25 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C ICBO - - 100 µA
DC current gain 1)
IC = 5 mA, VCE = 10 V hFE 50 - - -
DC current gain 1)
IC = 500 mA, VCE = 1 V
BCP68
BCP68-10
BCP68-16
BCP68-25
hFE
85
85
100
160
-
100
160
250
375
160
250
375
DC current gain 1)
IC = 1 A, VCE = 1 V hFE 60 - -
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA VCEsat - - 0.5 V
Base-emitter voltage 1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1
VBE(ON)
-
-
0.6
-
-
1
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz fT- 100 - MHz
1) Pulse test: t ≤=300µs, D = 2%
BCP68
3 Jun-29-2001
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00275BCP 68
03
10mA
1
10
3
10
5
5
101102
102
C
T
fMHz
Ι
55
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
0.3
0.6
0.9
1.2
W
1.8
Ptot
Collector cutoff current ICBO = f (TA)
VCB = 25V
0
10
EHP00276BCP 68
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
DC current gain hFE = f (IC)
VCE = 1V
10
EHP00277BCP 68
04
10
mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
Ι
2
10 ˚C
5
-50
100
˚C
25
˚C
3
10
BCP68
4 Jun-29-2001
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0
EHP00278BCP 68
CEsat
V
0.4 V 0.8
10
0
10
1
3
10
5
Ι
C
mA
˚C
5
2
10
0.2 0.6
10
4
5
100
25 ˚C
˚C
-50
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
0
EHP00279BCP 68
BE
V
Ι
C
0.2 0.4 0.6 0.8 1.2V
sat
2
10
1
10
0
mA
10
3
10
4
10
5
5
5˚C
100
25
-50 ˚C
˚C
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00280BCP 68
-6 -5
10
1
10s
-1
10
2
10
3
10
5
5
10
-4
10
-3
10
-2
10
1
0.0
0.2
0.1
0.05
0.02
0.01
0.005
=
D
0.5
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
