S7199-01
S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. A FOS (Fiber Optic plate with
Scintillator) that converts X-ray into visible-light is mounted on the CCD chip, which enables S7199-01 to acquire the X-ray
imaging. Two CCD chips of symmetric from side to side are mounted closely for realizing the possible minimum dead space in
between. The effective photosensitive length of about 150 mm in total is realized; each chip has 1536 × 128 pixels and the pixel
size is 48 × 48 µm. Even a X-ray image of moving object can be taken by taking a unique operation method of TDI, which can also
be useful for a non-destructive inspection where the object moves on a belt conveyer.
The each chip of S7199-01 has an effective pixel size of 48 × 48 µm and is available in active area of 73.728 (H) × 6.144 (V) mm
2
.
FOP type is also available (S7199-01F).
Features
l
1536 (H) × 128 (V) pixel format
l
Pixel size: 48 × 48 µm
l
Buttable structure of 2 chips
l
Coupled with FOS for X-ray imaging
l
TDI (Time Delay Integration) operation
l
100 % fill factor
l
Wide dynamic range
l
Low dark signal
l
Low readout noise
l
MPP operation
Applications
l
General X-ray imaging
l
Non-destructive inspection
l
Dental panorama
IMAGE SENSOR
CCD area image sensor
Front-illuminated FFT-CCDs for X-ray imaging
■ Selection guide
Type No. Window Cooling Number of
total pixels
Number of
active pixels
Active area
[mm (H) × mm(V)]
S7199-01
FOS
(fiber optic plate
with scintillator)
S7199-01F* FOP
(fiber optic plate)
Non-cooled 1536 × 128 1536 × 128 73.728 × 6.144
Note) As an input window, FOS is suited to S7199-01.
* When this product is used for X-ray detection applications, the user should assemble a scintillator or phosphor sheet.
■ General ratings
Param eter S7199-01 S7199-01F
CCD structure Full frame transfer or TDI
Fill factor 100 %
Number of active pixels 1536 (H) × 128 (V) *1
Pixel size 48 (H) × 48 (V) µm
CCD active area 73.728 (H) × 6.144 (V) mm *1
X-ray sensitive area 146 × 6 mm
Vertical clock phase 2 phase
Horizontal clock phase 2 phase
Output circuit Two-stage MOSFET source follower with load resistance
X-ray resolution 4 to 6 Lp/mm at 60 kVp, 20 µGy -
Total dose irradiation 50 Gy max.
Package 40 pin ceramic package
*1: Number of active pixels per chip. Two chips are used.
1
CCD area image sensor S7199-01
2
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Storage temperature Tstg -20 - +70 °C
Operating temperature To p r 0 - +40 °C
OD voltage VOD -0.5 - +20 V
RD voltage VRD -0.5 - +18 V
ISV voltage VISV -0.5 - +18 V
IGV voltage VIGV -15 - +15 V
IGH voltage VIGH -15 - +15 V
SG voltage VSG -15 - +15 V
OG voltage VOG -15 - +15 V
RG voltage VRG -15 - +15 V
TG voltage VTG -15 - +15 V
Vertical clock voltage VP1AV, VP2AV
VP1BV, VP2BV -15 - +15 V
Horizontal clock voltage VP1AH, VP2AH
VP1BH, VP2BH -15 - +15 V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 12 15 - V
Reset drain voltage VRD 12 13 14 V
Output gate voltage VOG -0.5 2 5 V
Output transistor ground voltage VSSA - 0 - V
Substrate voltage VSSD -5 0 - V
Vertical input source VISV - VRD -
Vertical input gate VIGV -8 0 -
Test point
Horizontal input gate VIGH -8 0 -
V
High VP1AVH, VP2AVH
VP1BVH, VP2BVH 0 3 6
Vertical shift register
clock voltage Low VP1AVL, VP2AVL
VP1BVL, VP2BVL -9 -8 -7
V
High VP1AHH, VP2AHH
VP1BHH, VP2BHH 0 3 6
Horizontal shift register
clock voltage Low VP1AHL, VP2AHL
VP1BHL, VP2BHL -9 -8 -7
V
High VSGH 0 3 6
Summing gate voltage Low VSGL -9 -8 -7
V
High VRGH 0 3 6
Reset gate voltage Low VRGL -9 -8 -7 V
High VTGH 0 3 6
Transfer gate voltage Low VTGL -9 -8 -7
V
■ Electrical characteristics (Ta=25 °C)
Parameter Symbol Remark Min. Typ. Max. Unit
Signal output frequency fc - 2 4 MHz
Reset clock frequency frg - 2 4 MHz
Vertical shift register capacitance CP1AV, CP2AV
CP1BV, CP2BV - 15000 - pF
Horizontal shift register capacitance CP1AH, CP2AH
CP1BH, CP2BH - 500 - pF
Summing gate capacitance CSG - 15 - pF
Reset gate capacitance CRG - 10 - pF
Transfer gate capacitance CTG - 500 - pF
Transfer efficiency CTE *2 0.99995 0.99999 -
DC output level Vout *3 5 8 11 V
Output impedance Zo *3 - 500 - Ω
Power dissipation P *3, *4 - 60 - mW
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: VOD=15 V.
*4: Power dissipation of the on-chip amplifier (each chip).
CCD area image sensor S7199-01
SPACIAL FREQUENCY (Line pair/mm)
0
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
(X-ray source: 60 kVp)
CTF
48263715 109
X-RAY EXPOSURE (µGy)
0
0
1000
500
(X-ray source: 70 kVp, Filter: aluminum 4 mmt)
OUTPUT VOLTAGE (mV)
20 4010 30
3
■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter Symbol Remark Min. Typ. Max. Unit
Saturation output voltage Vsat - Fw × Sv - V
Vertical 600 1200 -
Horizontal 600 1200 -
Full well capacity
Summing
Fw
600 1200 -
ke-
CCD node sensitivity Sv *2 0.45 0.6 - µV/e-
Dark current (MPP mode) DS *3 - 8 24 ke-/pixel/s
Ta=25 °C - 90 -
Readout noise Ta=-40 °C Nr *4
- 60 120
e-rms
Dynamic range DR *5 5000 20000 -
X-ray response non-uniformity (S7199-01) XRNU *6
Photo response non-uniformity (S7199-01F) PRNU *7 - ±10 ±30 %
White spots - - 10 Point
defects *8 Black spots - - 10
Cluster defects *9 - - 0
Blemish
Column defects
-
*10 - - 0
-
X-ray resolution (S7199-01) ∆R 4 6 - Lp/mm
*2: VOD=15 V.
*3: Dark current doubles for every 5 to 7 °C.
*4: Operating frequency is 2 MHz.
*5: Dynamic range = Full well capacity / Readout noise
*6: X-ray irradiation of 60kVp, measured at half of the full well capacity.
XRNU (%) = Signal
peak) to (peak noise pattern Fixed × 100
Measuring region that is within 146.0 mm (H) × 6.0 mm (V) (refer to dimensional outline)
*7: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 565 nm)
PRNU (%) = Signal
peak) to (peak noise pattern Fixed × 100
*8: White spots > 20 times of typ. dark signal (8 ke-/pixel/s).
Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity.
*9: continuous 2 to 9 point defects.
*10: continuous >10 point defects.
■ Resolution (S7199-01)
KMPDB0248EA
■ Response (S7199-01)
KMPDB0249EB
CCD area image sensor S7199-01
4
■ Device structure
■ Pixel format ← Left Horizontal Direction → Right
Blank Optical
black Isolation Effective Isolation Optical
black Blank
0 0 0 1536 0 0 0
Top ← Vertical direction → Bottom
Isolation Effective Isolation
0 128 0
KMPDC0110EA
......
1
2
3
4
5
6
234
125126127 128
S1
S2
S3
S4
S5
S6
S1531
S1532
S1533
S1534
S1535
S1536
......
......
1531
1532
1533
1534
1535
1536
ISV A14
A15
IGV
P1BV
P2BV
P1AV
P2AV
TG
RG
RD
SSA
OS
OD
OG
SG
P2AH P1AH P2BH P1BH
IGHSSD
......
1
2
3
4
5
6
234
125126127 128
S1
S2
S3
S4
S5
S6
S1531
S1532
S1533
S1534
S1535
S1536
......
......
1531
1532
1533
1534
1535
1536
P2AHP1AHP2BHP1BH
IGH SSD
LEFT CHIP RIGHT CHIP
S1, ... , S1536: ACTIVE ELEMENTS S1, ... , S1536: ACTIVE ELEMENTS
A16
A17
A18
A19
A20
A1
A2
A3
A4
A5
A6
A7 A8 A9 A10 A11 A12 A13 B1 B2 B3 B4 B5 B6
ISV
IGV
P1BV
P2BV
P1AV
P2AV
TG
RG
RD
SSA
OS
OD
OG
SG
B7
B8
B9
B10
B11
B12
B13
B14
B15
B16
B17
B18
B19
B20
■ Timing chart (TDI operation)
P1AV, P1BV
P2AV, P2BV
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
OS
ENLARGED VIEW
Tpwv
Tovr
Tpwr
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
OS
S2 S3S1 S4 S5 S1535 S1536
Tpwh, Tpws
KMPDC0142EB
CCD area image sensor S7199-01
5
■ Timing chart (TDI operation, 2 × 2 pixel binning)
P1AV, P1BV
P2AV, P2BV
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
OS
ENLARGED VIEW
Tpwv
Tovr
Tpwr
TG
P1AH, P1BH
P2AH, P2BH
SG
RG
OS
S1 + S2 S3 + S4 S1535 + S1536
Tpwh, Tpws
KMPDC0111EC
Parameter Symbol Remark Min. Typ. Max. Unit
Pulse width tpwv 30 60 - µs
P1AV, P1BV,
P2AV, P2BV, TG Rise and fall time tprv, tpfv *14, *15
200 - - ns
Pulse width tpwh 125 250 -ns
Rise and fall time tprh, tpfh 10 - - ns
P1AH, P1BH,
P2AH, P2BH Duty ratio
*15
-50 - %
Pulse width tpws 125 250 - ns
Rise and fall time tprs, tpfs 10 - - nsSG
Duty ratio - 50 - %
Pulse width tpwr 10 50 -ns
RG Rise and fall time tprr, tpfr 5 - - ns
TG-P1AH, P1BH Overlap time tovr 10 20 - µs
*14: TG terminal can be short-circuited to P2AV terminal.
*15: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
CCD area image sensor S7199-01
6
KMPDA0129EB
0.45
LEFT CHIP
EDGE PIXEL
DEAD SPACE: 130 to 200 µm
FOP
150.0 ± 0.2
149.5 ± 0.5
B1 → B13
28.0 ± 0.3
75.0 ± 0.475.0 ± 0.4
X-RAY
SENSITIVE AREA:
146.0 (H) × 6.0 (V)
A1 → A13
FOP
7.2
22.86 ± 0.5 22.86 ± 0.5
30.48 ± 0.5
A20 ← A14
25.4
12.7 ± 0.7 *
FOP
3.0
2.54
3.4
12.7 ± 0.7 *
* Distance between the center of
active area and the I/O pins
B20 ← B14
±50 µm MAX.
RIGHT CHIP
1.6
5.6
()
30.48 ± 0.5
SCINTILLATOR
TDI direction
■ Dimensional outline (unit: mm)
S7199-01
KMPDA0282EB
0.45
LEFT CHIP
EDGE PIXEL
DEAD SPACE: 130 to 200 µm
FOP
150.0 ± 0.2
149.5 ± 0.5
B1 → B13
28.0 ± 0.3
147.5
CCD
ACTIVE AREA:
146.0 (H) × 6.0 (V)
A1 → A13
FOP
7.2
22.86 ± 0.5 22.86 ± 0.5
30.48 ± 0.5
A20 ← A14
25.4
12.7 ± 0.7 *
FOP
3.0
2.54
3.4
12.7 ± 0.7 *
* Distance between the center of
active area and the I/O pins
B20 ← B14
±50 µm MAX.
RIGHT CHIP
1.6
5.2
()
30.48 ± 0.5
TDI direction
S7199-01F
CCD area image sensor S7199-01
7
■ Pin connections
Pin No. Symbol Description Remark
A1 RG Reset gate
A2 RD Reset drain
A3 SSA Analog ground
A4 OS Output transistor source
A5 OD Output transistor drain
A6 OG Output gate
A7 SG Summing gate
A8 P2AH CCD horizontal register clock A-2
A9 P1AH CCD horizontal register clock A-1
A10 SSD Digital ground
A11 P2BH CCD horizontal register clock B-2 Same timing as P2AH
A12 P1BH CCD horizontal register clock B-1 Same timing as P1AH
A13 IGH Test point (Horizontal input gate)
A14 ISV Test point (Vertical input source) Shorted to RD
A15 IGV Test point (Vertical input gate)
A16 P1BV CCD vertical register clock B-1 Same timing as P1AV
A17 P2BV CCD vertical register clock B-2 Same timing as P2AV
A18 P1AV CCD vertical register clock A-1
A19 P2AV CCD vertical register clock A-2
A20 TG Transfer gate
B1 IGH Test point (Horizontal input gate)
B2 P1BH CCD horizontal register clock B-1 Same timing as P1AH
B3 P2BH CCD horizontal register clock B-2 Same timing as P2AH
B4 SSD Digital ground
B5 P1AH CCD horizontal register clock A-1
B6 P2AH CCD horizontal register clock A-2
B7 SG Summing gate
B8 OG Output gate
B9 OD Output transistor drain
B10 OS Output transistor source
B11 SSA Analog ground
B12 RD Reset drain
B13 RG Reset gate
B14 TG Transfer gate
B15 P2AV CCD vertical register clock A-2
B16 P1AV CCD vertical register clock A-1
B17 P2BV CCD vertical register clock B-2 Same timing as P2AV
B18 P1BV CCD vertical register clock B-1 Same timing as P1AV
B19 IGV Test point (Vertical input gate)
B20 ISV Test Point (Vertical input source) Shorted to RD
■ Precautions for use (Electrostatic countermeasures)
* Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
* Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
* Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to
discharge.
* Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to
the amount of damage that occurs.
CCD area image sensor S7199-01
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information described in this material is current as of March, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the
delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept
absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Cat. No. KMPD1077E11
Apr. 2011 DN
8
