IXYH82N120C3 - IXYS - Product.Network

IXYH82N120C3 VCES = 1200V

IC110 = 82A

VCE(sat) ≤ ≤

≤ ≤

≤

3.2V

tfi(typ) = 93ns

DS100335A(08/11)

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 AD

GCE Tab

High-Speed IGBT

for 20-50 kHz Switching

Features

zOptimized for Low Switching Losses

zSquare RBSOA

zPositive Thermal Coefficient of

Vce(sat)

zAvalanche Rated

zHigh Current Handling Capability

zInternational Standard Package

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zHigh Frequency Power Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVCES IC = 250μA, VGE = 0V 1200 V

VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES, VGE = 0V 25 μA

TJ = 125°C 250 μA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC= 82A, VGE = 15V, Note 1 2.75 3.20 V

TJ = 125°C 3.50 V

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 1200 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ 1200 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C 160 A

IC110 TC= 110°C 82 A

ICM TC= 25°C, 1ms 320 A

IATC= 25°C 41 A

EAS TC= 25°C 800 mJ

SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 164 A

(RBSOA) Clamped Inductive Load @VCE ≤ VCES

PCTC= 25°C 1040 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C

MdMounting Torque 1.13/10 Nm/lb.in.

Weight 6g

1200V XPTTM IGBT

GenX3TM

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH82N120C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.

e

∅ P

TO-247 (IXYH) Outline

1 2 3

Terminals: 1 - Gate 2 - Collector

3 - Emitter

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs IC = 60A, VCE = 10V, Note 1 30 50 S

Cies 4060 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 285 pF

Cres 110 pF

Qg(on) 215 nC

Qge IC = 75A, VGE = 15V, VCE = 0.5 • VCES 26 nC

Qgc 84 nC

td(on) 29 ns

tri 78 ns

Eon 4.95 mJ

td(off) 192 280 ns

tfi 93 ns

Eoff 2.78 5.00 mJ

td(on) 29 ns

tri 90 ns

Eon 7.45 mJ

td(off) 200 ns

tfi 95 ns

Eoff 3.70 mJ

RthJC 0.12 °C/W

RthCS 0.21 °C/W

Inductive load, TJ = 25°C

IC = 80A, VGE = 15V

VCE = 0.5 • VCES, RG = 2Ω

Note 2

Inductive load, TJ = 125°C

IC = 80A, VGE = 15V

VCE = 0.5 • VCES, RG = 2Ω

Note 2

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYH82N120C3

Fi g . 1. Ou tpu t C har acteri sti cs @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

00.511.522.533.544.55

V

CE

- Volts

I

C

- Amperes

VGE

= 15V

13V

11V

10V

9V

7V

8V

6V

5V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 5 10 15 20 25 30

V

CE

- Volts

I

C

- Amperes

VGE

= 15V

13V

12V 10V

8V

11V

5V

9V

7V

6V

Fi g. 3. Ou tp ut C har act er i sti cs @ T

J

= 125º C

0

20

40

60

80

100

120

140

160

00.511.522.533.544.555.566.5

V

CE

- Volts

I

C

- Amperes

8V

7V

6V

5V

VGE

= 15V

13V

11V

10V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction T emperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

VGE

= 15V

I C = 82A

I C = 41A

I C = 164A

Fi g . 5. C o l l ector -to -E mi tter Vo l tag e vs.

Gate-to -Emi tter Vo l tage

1.5

2.5

3.5

4.5

5.5

6.5

7.5

8.5

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I C

= 164

A

TJ = 25ºC

82

A

41

A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

33.544.555.566.577.58

V

GE

- Volts

I

C

- Amperes

TJ = 125ºC

25ºC

- 40ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH82N120C3

Fig. 7. T ransconductance

0

10

20

30

40

50

60

70

80

0 20 40 60 80 100 120 140 160

IC - Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 10. R ever se-B ias Safe Op er ati ng Area

0

20

40

60

80

100

120

140

160

180

200 300 400 500 600 700 800 900 1000 1100 1200

VCE - Volts

IC - Amperes

T

J

= 125ºC

R

G

= 2

Ω

dv / dt < 10V / ns

Fi g . 11. Maximum Tr an si en t Ther mal I mped an c e

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width - Second

Z(th)JC - ºC / W

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180 200 220

QG - NanoCoulombs

VGE - Volts

V

CE

= 600V

I

C

= 82A

I

G

= 10mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

VCE - Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXYH82N120C3

Fig. 12. Inductive Switching Energy Loss vs.

Gate Resi stan ce

0

1

2

3

4

5

6

7

8

2 4 6 8 10 12 14 16 18

R

G

- Ohms

E

off

- MilliJoules

0

2

4

6

8

10

12

14

16

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 600V

I

C

= 40A

I

C

= 80A

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistan ce

40

60

80

100

120

140

160

180

200

2 4 6 8 10 12 14 16 18

R

G

- Ohms

t

f i

- Nanoseconds

140

220

300

380

460

540

620

700

780

t

d

(

off

)

- Nanoseconds

t

f i

t

d(off)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 600V

I

C

= 80A

I

C

= 40A

Fig. 13. Inductive Switching Energy Loss vs.

Collector Current

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

40 50 60 70 80 90 100

I

C

- Amperes

E

off

- MilliJoules

1

2

3

4

5

6

7

8

9

10

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 2

Ω ,

V

GE

= 15V

V

CE

= 600V

T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching Energy Loss vs.

Junction Tem perature

0.5

1

1.5

2

2.5

3

3.5

4

4.5

25 50 75 100 125

T

J

- Degrees Centigrade

E

off

- MilliJoules

1

2

3

4

5

6

7

8

9

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 2

Ω ,

V

GE

= 15V

V

CE

= 600V

I

C

= 40A

I

C

= 80A

Fig. 16. Inductive Turn-off Switching Times vs.

Co l lecto r Cu r r en t

0

40

80

120

160

200

240

280

40 50 60 70 80 90 100

I

C

- Amperes

t

f i

- Nanoseconds

170

180

190

200

210

220

230

240

t

d(off)

- Nanoseconds

t

f i

t

d(off)

- - - -

R

G

= 2

Ω

, V

GE

= 15V

V

CE

= 600V

T

J

= 125ºC

T

J

= 25ºC

Fig. 17. Inductive Turn-off Switching Times vs.

Junction Temperature

0

40

80

120

160

200

240

25 50 75 100 125

T

J

- Degrees Centigrade

t

f i

- Nanoseconds

160

180

200

220

240

260

280

t

d

(

off

)

- Nanoseconds

t

f i

t

d(on)

- - - -

R

G

= 2

Ω

, V

GE

= 15V

V

CE

= 600V

I

C

= 80A

I

C

= 40A

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH82N120C3

IXYS REF: IXY_82N120C3(8M)05-10-11

Fig. 19. Inductive Turn-on Switching T imes vs.

Collector Current

20

40

60

80

100

120

140

40 50 60 70 80 90 100

I

C

- Amperes

t

r i - Nanoseconds

0

10

20

30

40

50

60

t d

(

on

)

- Nanoseconds

t

r i

t

d(on)

- - - -

R

G

= 2Ω , V

GE

= 15V

V

CE

= 600V

T

J

= 25ºC

T

J

= 125ºC

Fig. 20. Inductive T urn-on Switching T imes vs.

Jun c ti o n Temper at u r e

0

20

40

60

80

100

120

140

25 50 75 100 125

T

J

- Degrees Centigrade

t

r i - Nanoseconds

22

24

26

28

30

32

34

36

t d

(

on

)

- Nanoseconds

t

r i

t

d(on)

- - - -

R

G

= 2Ω , V

GE

= 15V

V

CE

= 600V

I

C

= 80A

I

C

= 40A

Fi g . 18. I n d u ct i ve Tu r n -o n Sw i tch i n g Ti mes vs.

Gate R esi stan c e

0

20

40

60

80

100

120

140

160

2 4 6 8 1012141618

R

G

- Ohms

t r i - Nanoseconds

20

25

30

35

40

45

50

55

60

t d

(

on

)

- Nanoseconds

t

r i

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 600V

I

C

= 40A

I

C

= 80A