SUPERTEX INC on pe Parzaeqs ooowwy o ED oooounoD 7 Supertexinc. | N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BV ngs / Roscan) loon) Order Number / Package BVngs (max) (min) TO-3 TO-39 TO-220 Dice 160V 32 2.0A VNIT16N1 | VNI116N2 | VNI116N5 | VN1116ND 200V 32 2.0A VN1120N1 | VNii20N2 } VN1120N5 | VN1120ND Features Advanced DMOS Technology Freedom from secondary breakdown Low power drive requirement Ease of paralleling Low C,,, and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-Channel devices Applications Motor control Converters Amplifiers Switches Power supply circuits gooaaod Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Absolute Maximum Ratings These enhancement-mode (normally-off) power transistors util- ize a vertical DMOS structure and Supertex's well-proven silicon- gate manufacturing process. This combination produces devices with the power handiing capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally- induced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range of switching and amplifying applications where high break- down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. (Note 1) Package Options TO-39 TO-220 Drain-to-Source Voltage BV oss [= Drain-to-Gate Voltage BVogs 103 : Gate-to-Source Voltage +20V : Operating and Storage Temperature -55C to +150C Soldering Temperature 300C Note 1; See Package Outline section for discrete pinouts. : *Distance of 1.6 mm from case for 10 seconds. 8-77 een MES,SUPERTEX INC Thermal Characteristics on pe fjarzzess oooLbY? 3 t VN11C T-39- Package |, (continuous)* I, (pulsed)* Power Dissipation 0 4, I loam @T, = 25C C/W C/W TO-3 3A 4.54 100W 9.1 1.25 3A 4.54 TO-39 1A 2.5A 4w 33 31 1A 2.5A TO-220 2A 3.5A 45W 11.4 2.7 2A 3.5A Ip (Continuous) 1s limited by max rated T; Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) Symbol Parameter Nin Typ Max Unit Conditions BVoss Drain-to-Source VN1116 | 760 Vv Vg = 01 1, = SMA Breakdown Voltage VN1120 200 Vasuny Gate Threshold Voltage 1 3 Vv Vas = Vos: Ip = SMA AV asin) Change in Veciny with Temperature -3.5 -6 mV/PC Ves = Vos: |p = 5mA less Gate Body Leakage 100 nA Vag = 20V, Vog = 0 50 pA Vag = 0; Vog = Max Rating loss Zero Gate Voltage Drain Current 5 mA Veg = 0, Vag = 0.8 Max Rating T, = 125C loony ON-State Drain Current 1 1.5 A Veg = SV, Vpg = 25V 2 25 Vag = 10V, Vos = 25V Static Drain-to-Source .! = =0. Poston ON-State Fasistance ~ a 2 = wai, = AR sion) Change in Rago) With Temperature 0.6 KIC Veg = 10V,1,= 1A Ges Forward Transconductance 0.2 0.4 o Vog = 25V, Ip = 0.5A Cc Input Capacitance 300 350 Cn. Common Source Output Capacitance 75 150 pF Hos =O vos = 25V Cass Reverse Transfer Capacitance 20 30 | tony Turn-ON Delay Time 20 30 V. =D5v t, Rise Time 3 10 DD ty Turm-OFF Delay Time 82 40 ns Ip = 2A (OFF) - Rg = 50Q ; i Fall Time 8 15 , Ve Diode Forward Voltage Drop 0.7 1.0 Vv Veg = 0, Ign = 100MA t, Reverse Recovery Time 400 ns Vag = 0. Ign = O.1A i Note 1: Ail D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300us pulse, 2% duty cycie.} Note 2: All A.C, parameters sample tested. Switching Waveforms and Test Circuit Input ___ 7} Output _ 10% t(ON) "(OFF) td(ON) , tr tg(OFF), tt 10% \ 80%. 8-78 PULSE GENERATOR SCOPE D.U.T.FSUPERTEX INC Typical Performance Curves Ip (AMPERES) GFs (SIEMENS) Ip (AMPERES) Output Characteristics Vas = 10V a WwW ira Ww a = < 4 0 10 20 30 40 50 Vps {VOLTS} Transconductance Vs. Drain Current Vos = 25V E < s a a 9 1.0 2.0 1p (AMPERES) Maximum Rated Safe Operating Area TO-220(PULSED) -_ TO-220(DC} To- 6, RB, a o THERMAL RESISTANCE (NORMALIZED) LIMITED BY BVpss 1 10 100 1000 Vps (VOLTS) Pulse Condition: 300s, 2% dutycycle. 8-79 on pe far7ze95 ooo14s 3 VN11C T-3P-7/ Saturation Characteristics VGs = 10V, 0 2 4 6 8 10 Vps (VOLTS) Power Dissipation Vs. Case Temperature 100 wa 50 Q 0 25 50 75 100 125 150 Tc (Cc) Thermal Response Characteristics 1.0 0.5 9 0.001 0.01 0.1 1 10 tp (SECONDS) aSUPERTEX INC O1 DE Pfaz7aess Noob 7 VN11C 7-3 P-// BYVDSS Variation with Temperature ON-Resistance Vs. Drain Source Current 1.3 5 _ 1.2 4 a Ww _ N g ad : z : go 3 3 . tz = : 9 2 | Zz 0 9 2 i a , a t 8 e > oO 0.9 1 08 0 50 0 50 100 150 oO 1 2 3 4 5 | Ty PC) 1p {AMPS} Transfer Characteristics Vith) and RDS Variation with Temperature 2.0 1.2 14 Vps = 26 Ty = 55C 4| 4 7 ID = 0.54 25C Q 14a 1.24 9 a = N 3 fi z & w < 1.0 1.0 6 w = 2 a 1.0 c = = o 2 x & 0.9 oa | a = . 8G = iv 9 t ? og 0.6 } | 0 0.7 0.4 | Oo 2 4 6 8 10 ~50 0 50 100 160 Ves (VOLTS) TPC) : Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Charactaristics 400 : f=1MHz Vps = 10V t 300 Se Ciss a a ~ 4 3 > o t & | So 100 Coss ! CRSS 0 0 410 20 30 40 0 6 10 Vos (VOLTS) QG (NANOCOULOMBS) 8-80 caer en te ee a SN eo dete en a en