2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11 1Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com/doc?67884
N-Channel 60 V (D-S) MOSFET
FEATURES
• Military Qualified
• Low On-Resistence: 1.3
• Low Threshold: 1.7 V
• Low Input Capacitance: 35 pF
• Fast Switching Speed: 8 ns
• Low Input and Output Leakage
BENEFITS
• Guaranteed Reliability
•Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
•Solid-State Relays
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () at VGS = 10 V 3
Configuration Single
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
ORDERING INFORMATION
PART PACKAGE DESCRIPTION/DSCC
PART NUMBER
VISHAY ORDERING
PART NUMBER
2N6660
TO-205AD
(TO-39)
Commercial 2N6660
Commercial, Lead (Pb)-free 2N6660-E3
2N6660-2 See -2 Flow Document 2N6660-2
2N6660JANTX
JANTX2N6660 (std Au leads) 2N6660JTX02
JANTX2N6660 (with solder) 2N6660JTXL02
JANTX2N6660P (with PIND) 2N6660JTXP02
2N6660JANTXV JANTXV2N6660 (std Au leads) 2N6660JTXV02
JANTXV2N6660P (with PIND) 2N6660JTVP02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID
0.99
A
TC = 100 °C 0.62
Pulsed Drain CurrentaIDM 3
Maximum Power Dissipation TC = 25 °C PD
6.25 W
TA = 25 °C 0.725
Thermal Resistance, Junction-to-Ambientb RthJA 170 °C/W
Thermal Resistance, Junction-to-Case RthJC 20
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11 2Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 300 μs duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNIT MIN. TYP.aMAX.
Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 10 μA 60 75 -
V
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 1 mA 0.8 1.7 2
TC = - 55 °C - - 2.5
TC = 125 °C 0.3 - -
Gate-Body Leakage IGSS VGS = ± 20 V VDS = 0 V - - ± 100 nA
TC = 125 °C - - ± 500
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 48 V - - 1 μA
TC = 125 °C - - 100
On-State Drain Current ID(on) V
GS = 10 V VDS = 10 V - 2 - A
Drain-Source On-State ResistancebRDS(on)
VGS = 5 V ID = 0.3 A - 2 5
VGS = 10 V ID = 1 A - 1.3 3
TC = 125 °C - 2.4 5.6
Forward Transconductancebgfs VDS = 7.5 V, ID = 0.525 A 170 350 - mS
Diode Forward Voltage VSD IS = 0.99 A, VGS = 0 V 0.7 0.8 1.6 V
Dynamic
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
-3550
pF
Output Capacitance Coss -2540
Reverse Transfer Capacitance Crss -710
Drain-Source Capacitance Cds -30-
Switchingc
Turn-On Time tON VDD = 25 V, RL = 23
ID 1 A, VGEN = 10 V, Rg = 25
-810
ns
Turn-Off Time tOFF -8.510
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11 3Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Ohmic Region Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Output Characteristics for Low Gate Drive
On-Resistance vs. Gate-to-Source Voltage
Normalized On-Resistance vs. Junction Temperature
VDS -)V( egatloV ecruoS-ot-niarD
2.0
0123 45
1.6
1.2
0.8
0.4
0
VGS = 10 V 8 V
7 V
6 V
5 V
4 V
3 V
2 V
ID- Drain Current (A)
VGS -)V( egatloV ecruoS-etaG
1.0
0.8
0.6
0
0120
0.4
0.2
468
125 °C
25 °C
VDS = 15 V
TJ = - 55 °C
ID- Drain Current (A)
2.5
2.0
1.5
0
0.24.00
1.0
0.5
0.8 1.2 1.6
V
GS
= 10 V
R
DS(on)
- Drain-Source On-Resistance (Ω)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2.0 V
100
0 0.4 0.8 1.2 1.6 2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
VGS = 10 V
1.8 V
ID- Drain Current (mA)
VGS - Gate-Source Voltage (V)
2.8
048121620
2.4
2.0
1.6
0
1.2
0.8
0.4
1.0 A
0.5 A
ID = 0.1 A
RDS(on) - On-Resistance (Ω)
TJ- Junction Temperature (°C)
2.25
2.00
1.75
0.50
-50 - 05101
1.50
1.25
30 70 110
1.00
0.75
VGS = 10 V
ID= 1.0 A
0.2 A
RDS(on) - Drain-Source On-Resistance (Normalized)
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11 4Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Threshold Region
Gate Charge
Capacitance
Load Condition Effects on Switching
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70223.
VGS - Gate-to-Source Voltage (V)
10
1
0.01
0.5
0.1
1.0 1.5 2.0
VDS = 5 V
25 °C
- 55 °C125 °C
TJ= 150 °C
ID- Drain Current (mA)
Q
g
- Total Gate Charge (pC)
15.0
12.5
10.0
0
0060010
7.5
5.0
200 300 400
2.5
500
I
D
= 1.0 A
V
DS
= 30 V
48 V
V
GS
- Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Coss
120
100
80
0
05010
60
40
20 30 40
20
Ciss
Crss
VGS = 0 V
f = 1 MHz
C- Capacitance (pF)
Normalized Effective Transient
Thermal Impedance
t1- Square Wave Pulse Duration (s)
0.1 10 K
1.0
0.01
0.1
0010.1 K 101
1. Duty Cycle, D =
2. Per Unit Base = RthJC = 20 °C/W
3. TJM - TC = PDMZthJC(t)
t1
t2
t1
Notes:
PDM
t2
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
0.01
Package Information
www.vishay.com Vishay Siliconix
Revison: 27-Jul-15 1Document Number: 71367
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-205AD (TO-39 TALL LID)
Notes
(1) Dimensions are in inches. Metric equivalents are given for general information only.
(2) Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011" (0.028 mm).
(3) Dimension TL measured from maximum HD.
(4) Outline in this zone is not controlled.
(5) Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
(6) Leads at guage plane 0.054" + 0.001", - 0.000" (1.37 mm + 0.03 mm, - 0.00 mm) below seating plane shall be within 0.007" (0.18 mm) radius
of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
(7) LU applies between L1 and L2, LD applies between L2 and L maximum.
Diameter is uncontrolled in L1 and beyond LL minimum.
(8) All three leads.
(9) Radius (r) applies to both inside corners of tab.
(10) Drain is electrically connected to the case.
DIM. INCHES MILLIMETERS
MIN. MAX. MIN. MAX.
CD 0.305 0.335 7.75 8.51
CH 0.240 0.260 6.10 6.60
HD 0.335 0.370 8.51 9.40
LC (6) 0.200 TP 5.08 TP
LD (7)(8) 0.016 0.021 0.41 0.53
LL (7)(8) 0.500 0.750 12.70 19.05
LU (7)(8) 0.016 0.019 0.41 0.48
L1 (7)(8) — 0.050 — 1.27
L2 (7)(8) 0.250 — 6.35 —
P (5) 0.100 — 2.54 —
Q (4) — 0.050 — 1.27
r (9) — 0.010 — 0.25
TL (3) 0.029 0.045 0.74 1.14
TW (2) 0.028 0.034 0.71 0.86
α (6) 45° TP 45° TP
ECN: S15-1675-Rev. D, 27-Jul-15
DWG: 5511
CD
P
CH
Q
L1
L2
LD
LL
Seating
Plane
LU
HD
12
3
CL
TW
r
TL
LC
α
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Revision: 13-Jun-16 1Document Number: 91000
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