O
Maximum Ratings (at TA=25 C unless otherwise noted)
Parameter Symbol Unit
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
Forward rectified current
Maximum forward voltage
@ IF=1.0A
Max. Forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC method)
Max.Reverse current
VR=VRRM TJ=25°C
Typ. Thermal resistance
Typ. Diode Junction capacitance (Note 1)
Reverse Voltage: 20 to 150 Volts
Forward Current: 1.0 Amp
RoHS Device
Dimensions in inches and (millimeter)
CDBMT120-HF Thru. CDBMT1150-HF
Page 1
QW-JB025
Low Profile SMD Schottky Barrier Rectifiers
REV: A
Comchip Technology CO., LTD.
SOD-123H
0.146(3.7)
0.130(3.3) 0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
VRRM
VR
VRMS
IO
VF
IFSM
IR
RθJA
CJ
TJ
CDBMT
120-HF
CDBMT
140-HF
CDBMT
160-HF
CDBMT
180-HF
CDBMT
1100-HF
20
20
14
40
40
28
60
60
42
1.0
0.70
25
0.5
10
98
80
80
56
100
100
70
V
V
V
A
V
A
mA
O
C/W
OC
0.50 0.85
Note :
Features
-Low power loss,high efficiency.
-High current capability,low forward voltage drop.
-High surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
Operating temperature
Storage temperature range TSTG -65 to +175 OC
-55 to +125 -55 to +150
120 PF
CDBMT
130-HF
30
30
21
CDBMT
150-HF
50
50
35
1. F=1MHz and applied 4V DC reverse voltage
VR=VRRM TJ=100°C
0.031(0.8) Typ.
CDBMT
1150-HF
150
150
105
0.92
(Junction to ambient)
-Excellent power dissipation offers better reverse
leakage current and thermal resistance.
-Low profile package is 40% thinner than standards
SOD-123.
-Silicon epitaxial planar chip,metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500/228
Mechanical data
-Case: Molded plastic, SOD-123H/MINI SMA
-Terminals: Solderable per MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.011 grams approx.
-Mounting Position: any
-Epoxy: UL94-V0 rated flame retardant.
Halogen Free