NJL5901R-1
-
21-Feb-06
1.6
(0.29)(0.42) 0.45
0.2
0.07
0.6
0.07
(0.42)
1.3
±0.1
±0.1
±0.15
±0.15
(0.42)
±0.15
0.45
0.40.4 0.07
0.07
±0.1
±0.1
±0.1
0.2
±0.1
LED Center
PTx Center
COBP PHOTO REFLECTOR
GENERAL DESCRIPTION
NJL5901R-1 is the compact surface mount t ype photo reflector, which miniaturized outsid e dimension compared with the
current COBP reflector, NJL5901R. Compared with the NJL5901R, the mounting area of NJL5901R-1 is reduced to 5 4%.
Moreover, the output current is 400µA typ. and is raised 180% compared with the NJL5901R.
FEATURES OUTLINE (ty p.) Unit : mm
• Miniature, thi n package : 1.3mm × 1.6mm × 0.6mm
• High output : 400µA typ.
• Pb free solde r re-flowing permitted : 260°C, 2times
• Built-in visible light cut-off filter
APPLICATIONS
• Detectin g the location of Lens unit for Cellular Phone’ s
camera module
• Detecting the location of CD/DVD optical pickup head
• Detecting the rotation of various motors
• Paper ed ge detection and mechanism timing detection of
facsimile, copy machine etc
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL RATINGS UNIT
Emitter
Forward Current (Continuous)
Reverse Volt age (Continuous)
Power Dissipation
I
F
VR
PD
30
6
45
mA
V
mW
Detector
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
V
CEO
VECO
IC
PC
16
6
10
25
V
V
mA
mW
Coupled
Total Power Dissipation
Operating Temperature
Storage Temperature
Reflow Soldering Temperature
P
tot
T
opr
T
stg
T
sol
60
-20 to +85
-40 to +85
260
mW
°C
°C
°C
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C)
PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT
Emitter
Forward Voltage
Reverse Current
Capacitance
V
F
IR
Ct
IF=4mA
VR=6V
VR=0V,f=1MHz
—
—
—
—
—
25
1.3
10
—
V
µA
pF
Detector
Dark Current
Collector-Emitter Voltage
I
CEO
VCEO
VCE=10V
IC=100µA
—
16
—
—
0.2
—
µA
V
Coupled
Output Current
Operating Dark Current *1
Rise Time
Fall Time
I
O
ICEOD
tr
t
f
IF=4mA,VCE=2V,d=0.7mm
IF=4mA,VCE=2V
IO=100µA,VCE=2V,RL=1KΩ,d=0.7mm
IO=100µA,VCE=2V,RL=1KΩ,d=0.7mm
280
—
—
—
—
—
30
30
700
5
—
—
µA
µA
µs
µs
*1 Icoed may increase according to the periphery situation of the surface mounted product.
0.65 0.35 0.65
0.36 0.40.4
A:anode
K:cathode
C:collector
E:emitter PCB pattern
K
E
C
A