NTE386
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE386 is a silicon NPN power transistor in a T O3 type package designed for high voltage, high–
speed power switching in inductive circuit where fall time is critical. This device is particularly suited
for line operated switchmode applications.
Applications:
DSwitching Regulators
DInverters
DSolenoid and Relay Drivers
DMotor Controls
DDeflection Circuits
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEV 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IC
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +100°C), PD100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL+275°C. . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 500 – – V
Collector Cutoff Current ICEV VCEV = 800V, VEB(off) = 1.5V – – 0.25 mA
ICER VCE = 800V, RBE = 50Ω, TC = +1 00°C– – 5.0 mA
Emitter Cutoff Current IEBO VBE = 6V, IC = 0 – – 1.0 mA
ON Characteristics (Note 2)
DC Current Gain hFE VCE = 5V, IC = 5A 10 –60
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2A – – 1.8 V
IC = 20A, IB = 6.7A – – 5.0 V
Base–Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 2A – – 1.8 V
Dynamic Characteristics
Output Capacitance Ccb VCB = 10V, IE = 0, ftest = 1kHz 125 –500 pF
Switching Characteristics (Resistive Load)
Dealy Time tdVCC = 250V, IC = 10A, IB1 = 2A, –0.02 0.1 µs
Rise Time trVBE(off) = 5V, tp = 10µs,
Duty Cycle ≤ 2% –0.3 0.7 µs
Storage Time tsDuty Cycle
≤
2% –1.6 4.0 µs
Fall Time tf–0.3 0.7 µs
Note 2. Pulse Test: Pulse Width = 300ms, Duty Cycle ≤ 2%.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
