350A
PHASE CONTROL THYRISTORS Hockey Puk Version
ST180C..C SERIES
1
Bulletin I25164 rev. C 02/00
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Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 350 A
@ Ths 55 °C
IT(RMS) 660 A
@ Ths 25 °C
ITSM @ 50Hz 5000 A
@ 60Hz 5230 A
I2t@
50Hz 125 KA2s
@ 60Hz 114 KA2s
VDRM/VRRM 400 to 2000 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST180C..C Units
Major Ratings and Characteristics case style TO-200AB (A-PUK)
ST180C..C Series
2
Bulletin I25164 rev. C 02/00
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
ST180C..C 30
IT(AV) Max. average on-state current 350 (140) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 660 @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one-cycle 5000 t = 10ms No voltage
non-repetitive surge current 5230 A t = 8.3ms reapplied
4200 t = 10ms 100% VRRM
4400 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 125 t = 10ms No voltage Initial TJ = TJ max.
114 t = 8.3ms reapplied
88 t = 10ms 100% VRRM
81 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1250 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.96 V Ipk= 750A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILMax. (typical) latching current 1000 (300)
1.08 (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max.
1.18 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.14 (I > π x IT(AV)),TJ = TJ max.
Parameter ST180C..C Units Conditions
1.14 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = TJ max, anode supply 12V resistive load
ST180C..C Series
3
Bulletin I25164 rev. C 02/00
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di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST180C..C Units Conditions
tdTypical delay time 1.0
Switching
tqTypical turn-off time 100
µs
1000 A/µs
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM Max. peak reverse and off-state
IRRM leakage current
Blocking
500 V/µsT
J = TJ max linear to 80% rated VDRM
Parameter ST180C..C Units Conditions
30 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 10 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
TJ = - 40°C
mA TJ = 25°C
TJ = 125°C
TJ = - 40°C
VT
J = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 mA
Parameter ST180C..C Units Conditions
20
5.0
Triggering
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
VGD DC gate voltage not to trigger 0.25 V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJ = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT DC gate voltage required
to trigger
IGT DC gate current required
to trigger
W
VT
J = TJ max, tp ≤ 5ms
ST180C..C Series
4
Bulletin I25164 rev. C 02/00
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TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.17 DC operation single side cooled
junction to heatsink 0.08 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.033 DC operation single side cooled
case to heatsink 0.017 DC operation double side cooled
F Mounting force, ± 10% 4900 N
(500) (Kg)
wt Approximate weight 50 g
Parameter ST180C..C Units Conditions
K/W
Thermal and Mechanical Specification
°C
Case style TO - 200AB (A-PUK) See Outline Table
K/W
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Single Side Double Side Single Side Double Side
180°0.015 0.015 0.011 0.011 TJ = TJ max.
120°0.018 0.019 0.019 0.019
90°0.024 0.024 0.026 0.026 K/W
60°0.035 0.035 0.036 0.037
30°0.060 0.060 0.060 0.061
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- C = Puk Case TO-200AB (A-PUK)
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8- Critical dv/dt: None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
Ordering Information Table
Device Code
51 2 3 4
ST 18 0 C 20 C 1
7
6 8
ST180C..C Series
5
Bulletin I25164 rev. C 02/00
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Outline Table
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250
30˚ 60˚
90˚
120˚
180˚
Conduction Angle
ST180C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400
DC
30˚
60˚
90˚
120˚180˚
Conduction Period
ST180C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
ST180C..C Series
6www.irf.com
Bulletin I25164 rev. C 02/00
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A) Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450
30˚60˚90˚
120˚
180˚
Conduction Angle
ST180C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
DC
30˚
60˚
90˚120˚180˚
Conduction Period
ST180C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350 400 450
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Angle
ST180C..C Series
T = 125˚C
J
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
0 100 200 300 400 500 600 700
DC
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Period
ST180C..C Series
T = 125˚C
J
2000
2500
3000
3500
4000
4500
1 10 100
Initial T = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST180C..C Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST180C..C Series
Maximum Non Repetitive Surge Current
Initial T = 125˚C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST180C..C Series
7
www.irf.com
Bulletin I25164 rev. C 02/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Gate Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z (K/W)
thJ-hs
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
100
1000
10000
123456
T = 25˚C
J
T = 125˚C
J
ST180C..C Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
ST180C..C Series
Steady State Value
R = 0.17 K/W
(Single Side Cooled)
R = 0.08 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 ˚C
Tj=125 ˚C
Tj=-40 ˚C
(1)
(2) (3)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST180C..C Series
Rectangular gate pulse
(4)
