Bulletin I25164 rev. C 02/00 ST180C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 350A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK) Typical Applications DC motor controls Controlled DC power supplies AC controllers case style TO-200AB (A-PUK) Major Ratings and Characteristics Parameters ST180C..C Units 350 A 55 C 660 A 25 C @ 50Hz 5000 A @ 60Hz 5230 A @ 50Hz 125 KA2s @ 60Hz 114 KA2s 400 to 2000 V 100 s - 40 to 125 C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t V DRM/V RRM tq typical TJ www.irf.com 1 ST180C..C Series Bulletin I25164 rev. C 02/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM/I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 400 500 Type number 04 ST180C..C 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 30 On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM ST180C..C Units Conditions 350 (140) A 180 conduction, half sine wave 55 (85) C double side (single side) cooled 660 Max. peak, one-cycle 5000 non-repetitive surge current 5230 @ 25C heatsink temperature double side cooled t = 10ms A 4200 I 2t Maximum I2t for fusing V T(TO)1 Low level value of threshold t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 114 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 1250 KA2s KA2s V (I > x IT(AV)),TJ = TJ max. 1.14 voltage r t1 Low level value of on-state High level value of on-state (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. 1.18 slope resistance r t2 m (I > x IT(AV)),TJ = TJ max. 1.14 slope resistance V TM Max. on-state voltage 1.96 IH Maximum holding current 600 IL Max. (typical) latching current 2 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. 1.08 voltage V T(TO)2 High level value of threshold 100% VRRM 125 81 Maximum I2t for fusing reapplied t = 10ms 4400 88 I 2t No voltage t = 8.3ms 1000 (300) V I = 750A, TJ = TJ max, t = 10ms sine pulse mA TJ = TJ max, anode supply 12V resistive load pk p www.irf.com ST180C..C Series Bulletin I25164 rev. C 02/00 Switching Parameter di/dt ST180C..C Max. non-repetitive rate of rise 1000 of turned-on current td Typical delay time 1.0 t Typical turn-off time 100 Units Conditions A/s s q Gate drive 20V, 20, tr 1s T J = T J max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s Vd = 0.67% VDRM, TJ = 25C ITM = 300A, T J = T J max, di/dt = 20A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s Blocking Parameter ST180C..C Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/s TJ = TJ max linear to 80% rated VDRM IDRM IRRM Max. peak reverse and off-state leakage current 30 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST180C..C Maximum peak gate power 10 PG(AV) Maximum average gate power IGM Max. peak positive gate current +VGM Maximum peak positive 3.0 Maximum peak negative VGT to trigger IGD VGD A TJ = TJ max, t 5ms V T J = TJ max, tp 5ms DC gate current not to trigger DC gate voltage not to trigger www.irf.com p MAX. 180 - 90 150 40 - TJ = - 40C DC gate current required DC gate voltage required p TJ = TJ max, f = 50Hz, d% = 50 5.0 TYP. to trigger TJ = TJ max, t 5ms 20 gate voltage IGT W 2.0 gate voltage -VGM Units Conditions 2.9 - 1.8 3.0 1.2 10 0.25 mA TJ = 25C TJ = 125C TJ = - 40C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25C TJ = 125C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 ST180C..C Series Bulletin I25164 rev. C 02/00 Thermal and Mechanical Specification Parameter ST180C..C TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.033 case to heatsink 0.017 Mounting force, 10% wt DC operation single side cooled K/W 0.08 RthC-hs Max. thermal resistance, Approximate weight Case style Conditions C 0.17 junction to heatsink F Units K/W 4900 N (500) (Kg) 50 g TO - 200AB (A-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side 180 0.015 0.015 0.011 0.011 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 TJ = TJ max. K/W Ordering Information Table Device Code ST 18 0 C 20 C 1 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/sec (Standard value) L 4 = 1000V/sec (Special selection) www.irf.com ST180C..C Series Bulletin I25164 rev. C 02/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) 38 (1.50) DIA MAX. Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 130 ST180C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 Conduction Angle 80 30 70 60 90 60 120 180 50 40 0 50 100 150 200 250 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 28 (1.10) 130 ST180C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 80 Conduction Period 70 60 30 50 60 90 40 30 120 180 20 0 100 200 DC 300 400 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 ST180C..C Series 130 ST180C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 120 110 100 90 Conduction Angle 80 70 30 60 60 50 90 120 180 40 30 20 0 50 100 150 200 250 300 350 400 450 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Bulletin I25164 rev. C 02/00 130 ST180C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 120 110 100 90 Conduction Period 80 70 60 30 60 50 90 40 30 DC 0 100 200 300 400 500 600 700 Average On-state Current (A) 800 700 600 RMS Limit 500 400 300 Conduction Angle 200 ST180C..C Series T J = 125C 100 0 0 50 100 150 200 250 300 350 400 450 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 DC 180 120 90 60 30 RMS Limit Conduction Period ST180C..C Series T J = 125C 0 100 200 300 400 500 600 700 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 4500 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125C 4000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 3500 3000 2500 ST180C..C Series 2000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 Maximum Average On-state Power Loss (W) 1000 Fig. 4 - Current Ratings Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Fig. 3 - Current Ratings Characteristics 180 120 90 60 30 180 20 Average On-state Current (A) 900 120 5000 4500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125C No Voltage Reapplied Rated V RRMReapplied 4000 3500 3000 2500 ST180C..C Series 2000 0.01 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST180C..C Series Bulletin I25164 rev. C 02/00 Instantaneous On-state Current (A) 10000 T J= 25C T J= 125C 1000 ST180C..C Series 100 1 2 3 4 5 6 Instantaneous On-state Voltage (V) Transient Thermal Impedance ZthJ-hs (K/W) Fig. 9 - On-state Voltage Drop Characteristics 1 Steady State Value R thJ-hs = 0.17 K/W (Single Side Cooled) 0.1 R thJ-hs = 0.08 K/W (Double Side Cooled) (DC Operation) 0.01 ST180C..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) VGD IGD 0.1 0.001 0.01 Tj=-40 C 1 Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) Device: ST180C..C Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7