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VRSM VRRM Type
VDSM VDRM
VV
1300 1200 MCO 500-12io1
1500 1400 MCO 500-14io1
1700 1600 MCO 500-16io1
1900 1800 MCO 500-18io1
ITRMS = 880 A
IT(AV)M = 560 A
VRRM = 1200-1800 V
17000
16000
1445000
1062000
845000
813000
960 100
1 500
1
1000
120
60
30
10
-40...140
140
-40...125
3000
3600
13000
14400
880
560
Features
International standard package
Direct copper bonded Al2O3-ceramic
with copper base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered E 72873
Keyed gate/cathode twin pins
Applications
Motor control, softstarter
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Solid state switches
Advantages
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
4.5-7/40-62
11-13/97-115
650
Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
MCO 500
High Power Thyristor Modules
3542 3
254
Symbol Test Conditions Maximum Ratings
ITRMS TVJ = TVJM A
IT(AV)M TC = 85°C; 180° sine A
ITSM TVJ = 45°C t = 10 ms (50 Hz) A
VR = 0 t = 8.3 ms (60 Hz) A
TVJ = TVJM t = 10 ms (50 Hz) A
VR = 0 t = 8.3 ms (60 Hz) A
I2tTVJ = 45°C t = 10 ms (50 Hz) A2s
VR = 0 t = 8.3 ms (60 Hz) A2s
TVJ = TVJM t = 10 ms (50 Hz) A2s
VR = 0 t = 8.3 ms (60 Hz) A2s
(di/dt)cr TVJ = TVJM repetitive, IT =A A/ms
f = 50 Hz, tP = 200 ms
VD = 2/3 VDRM
IG= A, non repetitive, IT = IT(AV)M A/ms
diG/dt = A/ms
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM V/ms
RGK = ¥; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 msW
IT = IT(AV)M tP = 500 msW
PGAV W
VRGM V
TVJ °C
TVJM °C
Tstg °C
VISOL 50/60 Hz, RMS t = 1 min V~
IISOL £ 1 mA t = 1 s V~
MdMounting torque (M6) Nm/lb.in.
Terminal connection torque (M8) Nm/lb.in.
Weight Typical including screws g
030
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0.01 0.1 1 10
1
10
100
10-3 10-2 10-1 100101102
0.1
1
10
IG
VG
A
A
IG
1: IGT, TVJ = 140
°
C
2: IGT, TVJ = 25
°
C
3: IGT, TVJ = -40
°
C
µs
tgd
V
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD, T VJ = 140
°
C
4
2
156
Limit
typ.
TVJ = 2 5
°
C
3
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Symbol Test Conditions Characteristic Values
IRRM TVJ = TVJM; VR = VRRM mA
VTIT=A; T
VJ = 25°CV
VT0 For power-loss calculations only (TVJ = TVJM)V
rTmW
VGT VD= 6 V; TVJ = 25°CV
TVJ = -40°CV
IGT VD= 6 V; TVJ = 25°CmA
TVJ = -40°CmA
VGD TVJ = TVJM;V
D = 2/3 VDRM V
IGD TVJ = TVJM;V
D = 2/3 VDRM mA
ILTVJ = 25°C; VD = 6 V; tP = msmA
diG/dt = A/ms; IG =A
IHTVJ = 25°C; VD = 6 V; RGK = ¥mA
tgd TVJ = 25°C; VD = 1/2 VDRM ms
diG/dt = A/ms; IG = A
tqTVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 ms typ. ms
dv/dt = V/ms; IT = A; -di/dt = A/ms
RthJC DC current K/W
RthJK DC current K/W
dSCreeping distance on surface mm
dACreepage distance in air mm
aMaximum allowable acceleration m/s2
Dimensions in mm (1 mm = 0.0394")
2
3
300
400
0.072
0.096
40
1200 1.3
0.8
0.38
0.25
10
30 400
11
300
2
11
350
50 500 10
12.7
9.6
50
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
UL 758, style 1385,
CSA class 5851, guide 460-1-1
Type ZY 180 L (L = Left for pin pair 4/5)
MCO 500
52
10 49
M8x20
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MCO 500
0 300 600 900 1200 1500
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
12000
14000
0 200 400 600 800
0
200
400
600
800
1000
1200
0 25 50 75 100 125 150
110
105
106
107
0 255075100125150
I2t
ITAVM / IFAVM
IdAVM
A
TA
TC
stms
t
A2s
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
900
1000
°C
80 % VRRM
TVJ = 45°C
50 Hz
TVJ = 140°C
TVJ = 140°C
TVJ = 45°C
ITAVM
W
Ptot
A°C
RthKA K/W
0.03
0.07
0.12
0.2
0.3
0.4
0.6
°C
6xMCO500
Circuit
B6
TA
RthKA K/W
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
VR = 0V
ITSM AA
0.01
0.02
0.03
0.045
0.06
0.08
0.12
Ptot
W
Fig. 6 Power dissipation versus on-
state current and ambient
temperature
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration Fig. 4 òi2dt versus time (1-10 ms) Fig. 5 Maximum forward current
at case temperature
Fig. 7 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
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MCO 500
Fig.10Transient thermal impedance
junction to heatsink (per thyristor)
0 300 600 900 1200
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
t
ZthJK
s
t
10-3 10-2 10-1 100101102
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
K/W
ZthJC
IRMS
Ptot
0 25 50 75 100 125 150
A
6xMCO500
Circuit
W3
10-3 10-2 10-1 100101102
0.00
0.02
0.04
0.06
0.08
0.10
0.12
DC
180°
120°
60°
30°
DC
180°
120°
60°
30°
°C
TA
W
K/W
s
RthKA K/W
0.01
0.02
0.03
0.045
0.06
0.08
0.12
Fig. 9 Transient thermal impedance
junction to case (per thyristor)
Fig. 8 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.072
180°0.0768
120°0.081
60°0.092
30°0.111
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0054
2 0.0186 0.098
3 0.0432 0.54
4 0.0067 12
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.096
180°0.1
120°0.105
60°0.116
30°0.135
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0054
2 0.0186 0.098
3 0.0432 0.54
4 0.0067 12
5 0.024 12
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