MCO 500 ITRMS = 880 A IT(AV)M = 560 A VRRM = 1200-1800 V High Power Thyristor Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 3 Type 5 4 3 2 2 5 4 MCO 500-12io1 MCO 500-14io1 MCO 500-16io1 MCO 500-18io1 Symbol Test Conditions Maximum Ratings ITRMS IT(AV)M TVJ = TVJM TC = 85C; 180 sine ITSM TVJ = 45C VR = 0 Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 Keyed gate/cathode twin pins 880 560 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 17000 16000 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 13000 14400 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 1445000 1062000 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 845000 813000 As A2s 100 A/ms I2t TVJ = TVJM VR = 0 (di/dt)cr (dv/dt)cr PGM TVJ = TVJM repetitive, IT = 960 A f = 50 Hz, tP = 200 ms VD = 2/3 VDRM IG = 1 A, non repetitive, IT = IT(AV)M diG/dt = 1 A/ms A/ms 1000 V/ms 50/60 Hz, RMS IISOL 1 mA Md Mounting torque (M6) Terminal connection torque (M8) Typical including screws Weight Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits 120 60 30 10 W W W V -40...140 140 -40...125 C C C 3000 3600 V~ V~ PGAV VRGM VISOL 500 tP = 30 ms tP = 500 ms TVJ TVJM Tstg 2 Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M A2s A2s t = 1 min t=1s 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 650 g 030 Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-4 http://store.iiic.cc/ MCO 500 Symbol Test Conditions Characteristic Values IRRM TVJ = TVJM; VR = VRRM 40 mA VT IT 1.3 V VT0 rT For power-loss calculations only (TVJ = TVJM) 0.8 0.38 V mW VGT VD = 6 V; IGT VD = 6 V; 2 3 300 400 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM TVJ = TVJM; VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25C; VD = 6 V; tP = 30 ms 1 A/ms; IG = 1A diG/dt = 400 mA IH TVJ = 25C; VD = 6 V; RGK = 300 mA tgd TVJ = 25C; VD = 1/2 VDRM diG/dt = 1 A/ms; IG = 1A 2 ms tq TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 ms dv/dt = 50 V/ms; IT = 500 A; -di/dt = 10 A/ms typ. 350 ms RthJC RthJK DC current DC current 10 1: IGT, TVJ = 140C = 1200 A; TVJ = 25C TVJ = TVJ = TVJ = TVJ = 25C -40C 25C -40C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C VG 3 2 6 5 1 4 1 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD, TVJ = 140C 0.1 10-3 10-2 10-1 100 101 A IG 102 Fig. 1 Gate trigger characteristics 100 TVJ = 25C 0.072 0.096 K/W K/W 12.7 9.6 50 Creeping distance on surface Creepage distance in air Maximum allowable acceleration dS dA a V Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red UL 758, style 1385, Type ZY 180 L (L = Left for pin pair 4/5) CSA class 5851, guide 460-1-1 mm mm m/s2 s tgd typ. Limit 10 1 0.01 Dimensions in mm (1 mm = 0.0394") 0.1 A 1 10 IG Fig. 2 Gate trigger delay time 10 52 49 M8x20 (c) 2000 IXYS All rights reserved 2-4 http://store.iiic.cc/ MCO 500 107 14000 1000 VR = 0V I2t ITSM ITAVM 12000 A 10000 DC 180 sin 120 60 30 800 A2s 50 Hz 80 % VRRM TVJ = 45C TVJ = 140C A 900 700 600 8000 106 500 6000 400 TVJ = 45C 300 TVJ = 140C 4000 200 2000 100 5 0 0.001 10 0.01 s 0.1 1 0 1 ms t t 1200 Ptot W 50 75 100 125 C 150 Fig. 6 Power dissipation versus onstate current and ambient temperature 0.03 0.07 0.12 0.2 0.3 0.4 0.6 800 25 Fig. 5 Maximum forward current at case temperature RthKA K/W 1000 0 TC Fig. 4 oi2dt versus time (1-10 ms) Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration 10 600 DC 180 sin 120 60 30 400 200 0 0 200 400 600 800 A 0 25 50 75 100 ITAVM / IFAVM 5000 W 4500 125 C TA 150 Fig. 7 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature RthKA K/W 0.01 0.02 0.03 0.045 0.06 0.08 0.12 4000 Ptot 3500 3000 2500 2000 1500 Circuit B6 6xMCO500 1000 500 0 0 300 600 900 1200 1500 A 0 25 50 75 100 C 125 150 TA IdAVM (c) 2000 IXYS All rights reserved 3-4 http://store.iiic.cc/ MCO 500 5000 W 4500 Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature RthKA K/W 0.01 0.02 0.03 0.045 0.06 0.08 0.12 Ptot 4000 3500 3000 2500 2000 Circuit W3 6xMCO500 1500 1000 500 0 0 300 600 900 1200 A 0 25 50 75 100 125 C 150 TA IRMS 0.12 Fig. 9 Transient thermal impedance junction to case (per thyristor) K/W 0.10 RthJC for various conduction angles d: ZthJC d 0.08 DC 180 120 60 30 0.06 30 60 120 180 DC 0.04 0.072 0.0768 0.081 0.092 0.111 Constants for ZthJC calculation: 0.02 i 0.00 10-3 RthJC (K/W) 10-2 10-1 100 101 s 102 t 1 2 3 4 Rthi (K/W) ti (s) 0.0035 0.0186 0.0432 0.0067 0.0054 0.098 0.54 12 Fig.10 Transient thermal impedance junction to heatsink (per thyristor) 0.14 K/W 0.12 ZthJK RthJK for various conduction angles d: 0.10 d DC 180 120 60 30 0.08 0.06 30 60 120 180 DC 0.04 0.02 10-2 10-1 100 0.096 0.1 0.105 0.116 0.135 Constants for ZthJK calculation: i 0.00 10-3 RthJK (K/W) s 101 t (c) 2000 IXYS All rights reserved 102 1 2 3 4 5 Rthi (K/W) ti (s) 0.0035 0.0186 0.0432 0.0067 0.024 0.0054 0.098 0.54 12 12 4-4 http://store.iiic.cc/