PD - 95302 IRF7406PbF Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET(R) Power MOSFET l A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = -30V RDS(on) = 0.045 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C V GS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. Units -6.7 -5.8 -3.7 -23 2.5 0.02 20 -5.0 -55 to + 150 A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA www.irf.com Maximum Junction-to-Ambient Typ. Max. Units 50 C/W 1 10/7/04 IRF7406PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. Typ. Max. Units Conditions -30 V VGS = 0V, ID = -250A -0.020 V/C Reference to 25C, ID = -1mA 0.045 VGS = -10V, I D = -2.8A 0.070 VGS = -4.5V, ID = -2.4A -1.0 V VDS = VGS, ID = -250A 3.1 S VDS = -15V, ID = -2.8A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 59 ID = -2.8A 5.7 nC VDS = -2.4V 21 VGS = -10V, See Fig. 6 and 12 16 VDD = -15V 33 ID = -2.8A ns 45 RG = 6.0 47 RD = 5.3, See Fig. 10 LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 1100 490 220 V(BR)DSS RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS 2.5 4.0 D nH Between lead tip and center of die contact pF VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units -3.1 -23 42 64 -1.0 63 96 A V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.8A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. ISD -2.8A, di/dt 90A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 10sec. max. junction temperature. ( See fig. 11 ) TJ 150C 2 www.irf.com IRF7406PbF 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 100 -4.5V 10 20s PULSE WIDTH TJ = 25C A 1 0.1 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -I D , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 1 10 100 -4.5V 10 20s PULSE WIDTH TJ = 150C 1 0.1 100 1 -VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 1000 TJ = 25C 100 TJ = 150C VDS = -15V 20s PULSE WIDTH 4 5 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 100 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 10 10 A I D = -4.7A 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7406PbF 2500 -VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd Ciss 1500 Coss 1000 Crss 500 0 1 10 100 I D = -2.8A VDS = -24V 16 12 8 4 A FOR TEST CIRCUIT SEE FIGURE 12 0 0 20 -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) A 60 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 TJ = 150C TJ = 25C 1 VGS = 0V 0.1 0.3 0.6 0.9 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 A 1.2 100us 10 1ms 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7406PbF 6.0 V DS -ID , Drain Current (A) 5.0 V GS RD D.U.T. RG - + 4.0 V DD -10V 3.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 TC , Case Temperature ( C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7406PbF Current Regulator Same Type as D.U.T. 50K QG .2F 12V .3F -10V QGS D.U.T. QGD +VDS VGS VG -3mA IG Charge Fig 12a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 12b. Gate Charge Test Circuit www.irf.com IRF7406PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS* + - * V DD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS www.irf.com 7 IRF7406 IRF7406PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A A INCHES MAX MIN .0532 .0688 1.35 A1 .0040 6 8 7 6 5 1 2 3 4 H E 0.25 [.010] A e e1 8X b 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 0.25 [.010] .0098 MAX 1.75 b e1 6X MILLIMET ERS MIN y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER 8 www.irf.com IRF7406PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 www.irf.com 9