1©2016 Inte grate d Dev ice T echno logy, Inc . Revision C , Feb ruary 23, 2016
General Description
The 85408I is a low skew, high performance 1-to-8
Differential-to-LVDS Clock Distribution Chip. The 85408I CLK, nCLK
pair can accept most differential input levels and translates them to
3.3V LVDS output levels. Utilizing Low Voltage Differential Signaling
(LVDS), the 85408I provides a low power, low noise, low skew,
point-to-point solution for distributing LVDS clock signals.
Guaranteed output and part-to-part skew specifications make the
85408I ideal for those applications demanding well defined
performance and repeatability.
Features
Eight differential LVDS output pairs
One differential clock input pair
CLK, nCLK can accept the following differential input levels:
LVPECL, LVDS, LVHSTL, HCSL, SSTL
Maximum output frequency: 700MHz
Translates any differential input signal (LVPECL, LVHSTL, SSTL,
HCSL) to LVDS levels without external bias networks
Translates any single-ended input signal to LVDS with resistor
bias on nCLK input
Multiple output enable inputs for disabling unused outputs
in reduced fanout applications
Additive phase jitter, RMS: 167fs (typical)
Output skew: 50ps (maximum)
Part-to-part skew: 550ps (maximum)
Propagation delay: 2.4ns (maximum)
3.3V operating supply
-40°C to 85°C ambient operating temperature
Available in lead-free (RoHS 6) package
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
nQ6
Q6
nQ5
Q5
nQ4
Q4
nQ3
Q3
nQ2
Q2
nQ1
Q1
Q7
nQ7
GND
OE
V
DD
V
DD
GND
V
DD
CLK
nCL
K
Q0
nQ0
CLK
nCLK
OE
Q0
nQ0
Q1
nQ1
Q2
nQ2
Q3
nQ3
Q4
nQ4
Q5
nQ5
Q6
nQ6
Q7
nQ7
Pin Assignment
85408I
24-Lead TSSOP
4.4mm x 7.8mm x 0.925mm package body
G Package
Top View
Block Diagram
Low Skew, 1-to-8, Differential-to-LVDS Clock 85408I
Datasheet
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85408I D atasheet
Pin Description and Pin Characteristic Tables
Table 1. Pin Descriptions
NOTE: Pullup and Pulldown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values.
Table 2. Pin Characteristics
Number Name Type Description
1, 2 nQ6, Q6 Output Differential output pair. LVDS interface levels.
3, 4 nQ5, Q5 Output Differential output pair. LVDS interface levels.
5, 6 nQ4, Q4 Output Differential output pair. LVDS interface levels.
7, 8 nQ3, Q3 Output Differential output pair. LVDS interface levels.
9, 10 nQ2, Q2 Output Differential output pair. LVDS interface levels.
11, 12 nQ1, Q1 Output Differential output pair. LVDS interface levels.
13, 14 nQ0, Q0 Output Differential output pair. LVDS interface levels.
15 nCLK Input Pullup Inverting differential clock input.
16 CLK Input Pulldown Non-inverting differential clock input.
17, 19, 20 VDD Power Positive supply pins.
18, 21 GND Power Power supply ground.
22 OE Input Pullup
Output enable. Controls the enabling and disabling of outputs Qx, nQx. When HIGH,
the outputs are enabled. When LOW, the outputs are in High-Impedance. LVCMOS /
LVTTL interface levels.
23, 24 nQ7, Q7 Output Differential output pair. LVDS interface levels.
Symbol Parameter Test Conditions Minimum Typical Maximum Units
CIN Input Capacitance 4pF
CPD
Power Dissipation Capacitance
(per output) 4pF
RPULLUP Input Pullup Resistor 51 k
RPULLDOWN Input Pulldown Resistor 51 k
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85408I D atasheet
Function Tables
Table 3A. Output Enable Function Table
Table 3B. Clock Input Function Table
NOTE 1: Please refer to the Application Information section, Wiring the Differential Input to Accept Single-Ended Levels.
Inputs Outputs
OE Q[0:7], nQ[0:7]
0 High-Impedance
1 Active (default)
Inputs Outputs
Input to Output Mode PolarityCLK nCLK Q[0:7] nQ[0:7]
0 1 LOW HIGH Differential to Differential Non-Inverting
1 0 HIGH LOW Differential to Differential Non-Inverting
0 Biased; NOTE 1 LOW HIGH Single-Ended to Differential Non-Inverting
1 Biased; NOTE 1 HIGH LOW Single-Ended to Differential Non-Inverting
Biased; NOTE 1 0 HIGH LOW Single-Ended to Differential Inverting
Biased; NOTE 1 1 LOW HIGH Single-Ended to Differential Inverting
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85408I D atasheet
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress
specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC
Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.
DC Electrical Characteristics
Table 4A. LVDS Power Supply DC Characteristics,VDD = 3.3V ± 5%, TA = -40°C to 85°C
Table 4B. LVCMOS/LVTTL DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
Table 4C. Differential DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
NOTE 1: VIL should not be less than -0.3V.
NOTE 2: Common mode input voltage is defined as VIH.
Item Rating
Supply Voltage, VDD 4.6V
Inputs, VI-0.5V to VDD + 0.5V
Outputs, IO (LVDS)
Continuos Current
Surge Current
10mA
15mA
Package Thermal Impedance, JA 70°C/W (0 mps)
Storage Temperature, TSTG -65C to 150C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
VDD Positive Supply Voltage 3.135 3.3 3.465 V
IDD Power Supply Current 90 mA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
VIH Input High Voltage 2 VDD + 0.3 V
VIL Input Low Voltage -0.3 0.8 V
IIH Input High Current VDD = VIN = 3.465V 5 µA
IIL Input Low Current VDD = 3.465V, VIN = 0V -150 µA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
IIH Input High Current CLK VDD = VIN = 3.465V 150 µA
nCLK VDD = VIN = 3.465V 5
IIL Input Low Current CLK VDD = 3.465V, VIN = 0V -5 µA
nCLK VDD = 3.465V, VIN = 0V -150 µA
VPP Peak-to-Peak Voltage; NOTE 1 0.15 1.3 V
VCMR Common Mode Input Voltage; NOTE 1, 2 GND + 0.5 VDD – 0.85 V
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85408I D atasheet
Table 4D. LVDS DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
Table 5. AC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium
has been reached under these conditions.
NOTE: All parameters measured at fMAX unless noted otherwise.
NOTE 1: Measured from the differential input crossing point to the differential output crossing point.
NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the differential crossing
point of the input to the differential output crossing point.
NOTE 3: Defined as skew between outputs on different devices operating at the same supply voltages and with equal load conditions. Using
the same type of inputs on each device, the outputs are measured at the differential cross points.
NOTE 4: This parameter is defined in accordance with JEDEC Standard 65.
NOTE 5: These parameters are guaranteed by characterization. Not tested in production.
Symbol Parameter Test Conditions Minimum Typical Maximum Units
VOD Differential Output Voltage RL = 100250 400 600 mV
VOD VOD Magnitude Change RL = 10050 mV
VOS Offset Voltage RL = 1001.125 1.4 1.6 V
VOS VOS Magnitude Change RL = 10050 mV
IOz High Impedance Leakage -10 +10 µA
IOFF Power Off Leakage -1 +1 µA
IOSD
Differential Output Short
Circuit Current -5.5 mA
IOS/IOSB Output Short Circuit Current -12 mA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
fMAX Output Frequency 700 MHz
tPD Propagation Delay; NOTE 1 1.6 2.4 ns
tjit
Buffer Additive Phase Jitter, RMS;
refer to Additive Phase Jitter
Section
156.25MHz,
Integration Range: (12kHz – 20MHz) 167 fs
tsk(o) Output Skew; NOTE 2, 4 50 ps
tsk(pp) Part-to-Part Skew; NOTE 3, 4 550 ps
tR / tFOutput Rise/Fall Time 20% to 80% 50 600 ps
odc Output Duty Cycle 45 55 %
tPZL, tPZH Output Enable Time; NOTE 5 5ns
tPLZ, tPHZ Output Disable Time; NOTE 5 5ns
6©2016 Inte grate d Dev ice T echno logy, Inc . Revision C , Feb ruary 23, 2016
85408I D atasheet
Additive Phase Jitter
The spectral purity in a band at a specific offset from the fundamental
compared to the power of the fundamental is called the dBc Phase
Noise. This value is normally expressed using a Phase noise plot
and is most often the specified plot in many applications. Phase noise
is defined as the ratio of the noise power present in a 1Hz band at a
specified offset from the fundamental frequency to the power value of
the fundamental. This ratio is expressed in decibels (dBm) or a ratio
of the power in the 1Hz band to the power in the fundamental. When
the required offset is specified, the phase noise is called a dBc value,
which simply means dBm at a specified offset from the fundamental.
By investigating jitter in the frequency domain, we get a better
understanding of its effects on the desired application over the entire
time record of the signal. It is mathematically possible to calculate an
expected bit error rate given a phase noise plot.
As with most timing specifications, phase noise measurements has
issues relating to the limitations of the equipment. Often the noise
floor of the equipment is higher than the noise floor of the device. This
is illustrated above. The device meets the noise floor of what is
shown, but can actually be lower. The phase noise is dependent on
the input source and measurement equipment.
SSB Phase Noise dBc/Hz
Offset from Carrier Frequency (Hz)
Additive Phase Jitter @156.25MHz
12kHz – 20MHz = 167fs (typical)
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85408I D atasheet
Parameter Measurement Information
3.3V LVDS Output Load AC Test Circuit
Propagation Delay
Output Skew
Differential Input Level
Part-to-Part Skew
Output Duty Cycle/Pulse Width/Period
GND
VDD
t
PD
Q[0:7]
nQ[0:7]
nCLK
CLK
Qx
nQx
Qy
nQy
VDD
nCLK
CLK
GND
V
CMR
Cross Points
V
PP
tsk(pp)
Part 1
Part 2
Qx
nQx
Qy
nQy
Q[0:7]
nQ[0:7]
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85408I D atasheet
Parameter Measurement Information, continued
Output Rise/Fall Time
Differential Output Voltage Setup
Differential Output Short Circuit Setup
Offset Voltage Setup
Power Off Leakage Setup
Output Short Circuit Current Setup
20%
80% 80%
20%
t
R
t
F
V
OD
Q[0:7]
nQ[0:7]
out
out
LVDS
DC Input
I
OSD
V
DD
LVDS
I
OFF
V
DD
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85408I D atasheet
Applications Information
Wiring the Differential Input to Accept Single-Ended Levels
Figure 1 shows how the differential input can be wired to accept
single-ended levels. The reference voltage V_REF = VDD/2 is
generated by the bias resistors R1, R2 and C1. This bias circuit
should be located as close as possible to the input pin. The ratio of
R1 and R2 might need to be adjusted to position the V_REF in the
center of the input voltage swing. For example, if the input clock swing
is only 2.5V and VDD = 3.3V, V_REF should be 1.25V and R2/R1 =
0.609.
Figure 1. Single-Ended Signal Driving Differential Input
Recommendations for Unused Output Pins
Outputs:
LVDS Outputs
All unused LVDS output pairs can be either left floating or terminated
with 100 across. If they are left floating, there should be no trace
attached.
V_REF
Single Ended Clock Input
VDD
CLK
nCLK
R1
1K
C1
0.1u R2
1K
10©2016 Inte grate d Dev ice T echno logy, Inc . Revision C , Feb ruary 23, 2016
85408I D atasheet
Differential Clock Input Interface
The CLK /nCLK accepts LVDS, LVPECL, LVHSTL, SSTL, HCSL
and other differential signals. Both signals must meet the VPP and
VCMR input requirements. Figures 2A to 2F show interface
examples for the CLK/nCLK input driven by the most common
driver types. The input interfaces suggested here are examples
only. Please consult with the vendor of the driver component to
confirm the driver termination requirements. For example, in Figure
2A, the input termination applies for IDT open emitter LVHSTL
drivers. If you are using an LVHSTL driver from another vendor,
use their termination recommendation.
2A. CLK/nCLK Input Driven by an IDT
Open Emitter LVHSTL Driver
Figure 3C. CLK/nCLK Input
Driven by a 3.3V LVPECL Driver
Figure 2E. CLK/nCLK Input
Driven by a 3.3V HCSL Driver
Figure 2B. CLK/nCLK Input
Driven by a 3.3V LVPECL Driver
Figure 2D. CLK/nCLK Input
Driven by a 3.3V LVDS Driver
Figure 2F. CLK/nCLK Input
Driven by a 2.5V SSTL Driver
R1
50Ω
R2
50Ω
1.8V
Zo = 50Ω
Zo = 50Ω
CLK
nCLK
3.3V
LVHSTL
IDT
LVHSTL Driver
Differential
Input
H
CSL
*R
3
*
R4
C
L
K
n
C
L
K
3
.
3V
3
.
3V
Diff
e
r
e
nti
a
l
In
p
u
t
CLK
nCLK
Differential
Input
SSTL
2.5V
Zo = 60Ω
Zo = 60Ω
2.5V
3.3V
R1
120Ω
R2
120Ω
R3
120Ω
R4
120Ω
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85408I D atasheet
3.3V LVDS Driver Termination
A general LVDS interface is shown in Figure 3. In a 100 differential
transmission line environment, LVDS drivers require a matched load
termination of 100 across near the receiver input. For a multiple
LVDS outputs buffer, if only partial outputs are used, it is
recommended to terminate the unused outputs.
Figure 3. Typical LVDS Driver Termination
3.3V
LVDS Driver
R1
100Ω
+
3.3V 50Ω
50Ω
100Ω Differential Transmission Line
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85408I D atasheet
Power Considerations
This section provides information on power dissipation and junction temperature for the 85408I.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the 85408I is the sum of the core power plus the analog power plus the power dissipated in the load(s). The
following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results.
Power (core)MAX = VDD_MAX * IDD_MAX = 3.465V * 90mA = 311.85mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The
maximum recommended junction temperature for devices is 125°C.
The equation for Tj is as follows: Tj = JA * Pd_total + TA
Tj = Junction Temperature
JA = Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
TA = Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 70°C/W per Table 6 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.312W * 70°C/W = 106.8°C. This is well below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 6. Thermal Resistance JA for 24 Lead TSSOP, Forced Convection
JA by Velocity
Meters per Second 012.5
Multi-Layer PCB, JEDEC Standard Test Boards 70°C/W 65.0°C/W 62°C/W
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85408I D atasheet
Reliability Information
Table 7. JA vs. Air Flow Table for a 24 Lead TSSOP
Transistor Count
The transistor count for 85408I is: 1821
Pin compatible with SN65LVDS104
Package Outline and Package Dimensions
Package Outline - G Suffix for 24 Lead TSSOP Table 8. Package Dimensions
Reference Document: JEDEC Publication 95, MO-153
JA by Velocity
Meters per Second 012.5
Multi-Layer PCB, JEDEC Standard Test Boards 70°C/W 65.0°C/W 62°C/W
All Dimensions in Millimeters
Symbol Minimum Maximum
N16
A1.20
A1 0.05 0.15
A2 0.80 1.05
b0.19 0.30
c0.09 0.20
D7.70 7.90
E6.40 Basic
E1 4.30 4.50
e0.65 Basic
L0.45 0.75
aaa 0.10
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85408I D atasheet
Ordering Information
Table 9. Ordering Information
Part/Order Number Marking Package Shipping Packaging Temperature
85408BGILF ICS85408BGILF “Lead-Free” 24 Lead TSSOP Tube -40C to 85C
85408BGILFT ICS85408BGILF “Lead-Free” 24 Lead TSSOP Tape & Reel -40C to 85C
15©2016 Inte grate d Dev ice T echno logy, Inc . Revision C , Feb ruary 23, 2016
85408I D atasheet
Revision History Sheet
Rev Table Page Description of Change Date
A 1 Pin Assignment - corrected package information from 300-MIL to 173-MIL. 8/25/04
AT8
1
11
Features Section - added Lead-Free bullet. Corrected Block Diagram.
Ordering Information Table - added Lead-Free information. 4/25/05
B
T5 5
6
12
AC Characteristics Table - added Additive Phase Jitter spec.
Added Additive Phase Jitter Plot.
Added Power Considerations section.
Converted datasheet format.
6/25/09
B
T9 1
1
14
15
Features section - removed reference to leaded devices.
Removed ICS Chip logo from General description.
Ordering Information - removed leaded devices.
Updated datasheet format.
3/5/15
C
T9 14 Ordering Information - removed Tape & Reel count and table note.
Deleted "HiperClockS" reference throughout the datasheet.
Updated datasheet header/footer.
2/23/16
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