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FGH20N60SFD Rev. A

FGH20N60SFD 600V, 20A Field Stop IGBT

September 2008

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol Description Ratings Units

VCES Collector to Emitter Voltage 600 V

VGES Gate to Emitter Voltage ± 20 V

ICCollector Current @ TC = 25oC40 A

Collector Current @ TC = 100oC20 A

ICM (1) Pulsed Collector Current @ TC = 25oC 60 A

PDMaximum Power Dissipation @ TC = 25oC165 W

Maximum Power Dissipation @ TC = 100oC66 W

TJ Operating Junction Temperature -55 to +150 oC

Tstg Storage Temperature Range -55 to +150 oC

TLMaximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds 300 oC

Symbol Parameter Typ. Max. Units

RθJC(IGBT) Thermal Resistance, Junction to Case - 0.76 oC/W

RθJC(Diode) Thermal Resistance, Junction to Case - 2.51 oC/W

RθJA Thermal Resistance, Junction to Ambient - 40 oC/W

G

E

C

ECG

COLLECTOR

(FLANGE)

FGH20N60SFD

600V, 20A Field Stop IGBT

Features

• High current capability

• Low saturation voltage: VCE(sat) =2.2V @ IC = 20A

• High input impedance

• Fast switching

• RoHS compliant

Applications

• Induction Heating, UPS, SMPS, PFC

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series

of Field Stop IGBTs offer the optimum performance for Induction

Heating, UPS, SMPS and PFC applications where low conduc-

tion and switching losses are essential.

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FGH20N60SFD Rev. A

FGH20N60SFD 600V, 20A Field Stop IGBT

Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Device Marking Device Package Packaging

Type Qty per Tube

Max Qty

per Box

FGH20N60SFD FGH20N60SFDTU TO-247 Tube 30ea -

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V

∆BVCES

∆TJ

Te mperature Coefficient of Breakdown

Voltage VGE = 0V, IC = 250µA-0.6-V/

oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V

VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V -2.22.8V

IC = 20A, VGE = 15V,

TC = 125oC-2.4- V

Dynamic Characteristics

Cies Input Capacitance VCE = 30V, VGE = 0V,

f = 1MHz

- 940 - pF

Coes Output Capacitance - 110 - pF

Cres Reverse Transfer Capacitance - 40 - pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC = 400V, IC = 20A,

RG = 10Ω, VGE = 15V,

Inductive Load, TC = 25oC

-13-ns

trRise Time - 16 - ns

td(off) Turn-Off Delay Time - 90 - ns

tfFall Time - 24 48 ns

Eon Turn-On Switching Loss - 0.37 - mJ

Eoff Turn-Off Switching Loss - 0.16 - mJ

Ets Total Switching Loss - 0.53 - mJ

td(on) Turn-On Delay Time

VCC = 400V, IC = 20A,

RG = 10Ω, VGE = 15V,

Inductive Load, TC = 125oC

-12-ns

trRise Time - 16 - ns

td(off) Turn-Off Delay Time - 95 - ns

tfFall Ti me - 28 - ns

Eon Turn-On Switching Loss - 0.4 - mJ

Eoff Turn-Off Switching Loss - 0.28 - mJ

Ets Total Switching Loss - 0.69 - mJ

QgTotal Gate Charge VCE = 400V, IC = 20A,

VGE = 15V

-65-nC

Qge Gate to Emitter Charge - 7 - nC

Qgc Gate to Collector Charge - 33 - nC

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FGH20N60SFD Rev. A

FGH20N60SFD 600V, 20A Field Stop IGBT

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

VFM Diode Forward Voltage IF = 10A TC = 25oC- 1.9 2.5V

TC = 125oC- 1.7 -

trr Diode Reverse Recovery Time

IES =10A, dIES/dt = 200A/µs

TC = 25oC- 34 - ns

TC = 125oC- 57 -

Qrr Diode Reverse Recovery Charge TC = 25oC- 41 - nC

TC = 125oC- 96 -

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FGH20N60SFD Rev. A

FGH20N60SFD 600V, 20A Field Stop IGBT

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE

Temperature at Variant Current Level

0.01.53.04.56.0

0

20

40

60 20V

TC = 25oC

15V 12V

10V

VGE = 8V

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V] 0.01.53.04.56.0

0

20

40

60

20V

TC = 125oC

15V

12V

10V

VGE = 8V

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]

012345

0

20

40

60

Comm on E m itter

VGE = 15V

TC = 25oC

TC = 125oC

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V] 4681012

0

20

40

60 Commo n Emitt e r

VCE = 20V

TC = 25oC

TC = 125oC

Collector Current, IC [A]

Gate-Emitter Voltage,VGE [V]

25 50 75 100 125

1

2

3

4

40A

20A

IC = 10A

Comm on E mitter

VGE = 15V

Collector-Emitter Voltage, VCE [V]

Collector-Emitter Case Temperature, TC [oC] 0 4 8 121620

0

4

8

12

16

20

IC = 10A

20A

40A

Comm on Emitter

TC = -40oC

Collector-Emitter Voltage, VCE [V]

Gate -E m itter V o ltage , V GE [V]

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FGH20N60SFD Rev. A

FGH20N60SFD 600V, 20A Field Stop IGBT

Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance

0 4 8 121620

0

4

8

12

16

20

IC = 10A

20A

40A

Comm on Emitter

TC = 25oC

Collector-Emitter Voltage, VCE [V]

Gate -E m itter V o ltage , V GE [V] 0 4 8 121620

0

4

8

12

16

20

40A

IC = 10A

20A

Comm on E m itter

TC = 125oC

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, VGE [V]

0.1 1 10

0

500

1000

1500

2000

2500 Comm on E mitter

VGE = 0V, f = 1MHz

TC = 25oC

Cres

Coes

Cies

Capacitance [pF]

Collector-Emitter Voltage, VCE [V] 30 020406080

0

3

6

9

12

15 Comm on Emitter

TC = 25oC

300V

200V

VCC = 100V

Gate-Emi tter Voltage, VGE [V]

Ga te Cha r g e , Qg [nC]

1 10 100 1000

0.01

0.1

1

10

100

Single Nonrepetitive

Pulse TC = 25 oC

Curves m ust be derated

linearly with increase

in temperatur e

1ms

10 ms

DC

10µs

100µs

Collector Current, Ic [A]

Collector-Emitter Voltage, VCE [V] 0 102030405060

5

10

100

Common Emitter

VCC = 400V, V GE = 15V

IC = 20A

TC = 25oC

TC = 125oC

td(on)

tr

Switching Time [ns]

Gate Resistance, RG [Ω]

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FGH20N60SFD Rev. A

FGH20N60SFD 600V, 20A Field Stop IGBT

Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.

Gate Resistance Collector Current

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.

Collector Current Gate Resistance

Figure 17. Switching Loss vs. Figure 18. Turn off Switching

Collector Current SOA Characteristics

0 102030405060

10

100

1000 C o mm o n Emitter

VCC = 400V, VGE = 15V

IC = 20A

TC = 25oC

TC = 125oC td(off)

tf

Switching Time [ns]

Gate Resistance, RG [Ω]

0 10203040

3

10

100

200 Common Emitter

VGE = 15V, RG = 10Ω

TC = 25oC

TC = 125oC

tr

td(on)

Switching Time [ns]

Collector Current, IC [A ]

0 10203040

10

100

300 Common Emitter

VGE = 15V, RG = 10Ω

TC = 25oC

TC = 125oC

td(off)

tf

Switching Time [ns]

Colle c to r Curren t, IC [A]

0 102030405060

0.1

1

3Common Emitter

VCC = 400V, VGE = 15V

IC = 20A

TC = 25oC

TC = 125oC Eon

Eoff

Switching Loss [mJ]

Gate Resistance, RG [Ω]

1 10 100 1000

1

10

80

Safe Operating Area

VGE = 15V, TC = 125oC

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]

0 10203040

0.02

0.1

1

10 Common Emitter

VGE = 15V, RG = 10Ω

TC = 25oC

TC = 125oC Eon

Eoff

Switching Loss [mJ]

Colle c to r C urren t, IC [A]

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FGH20N60SFD Rev. A

FGH20N60SFD 600V, 20A Field Stop IGBT

Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Reverse Current

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

Figure 23.Transient Thermal Impedance of IGBT

0 100 200 300 400 500 600

1E-3

0.01

0.1

1

10

100

TC = 125oC

TC = 25oC

TC = 75oC

Reverse Current , IR [µA]

Reverse Voltage, VR [V]

01234

0.1

1

10

40

TJ = 75oC

TJ = 25oC

TJ = 125oC

Forward Voltage, VF [V]

Forward Current, IF [A]

0 5 10 15 20

10

20

30

40

50

60

200A/µs

di/dt = 100A/µs

Stored Recovery Charge, Qrr [nC]

Forwa rd C u rre n t, IF [A] 0 5 10 15 20

10

20

30

40

50

60

200A/µs

di/dt = 100 A/µs

Reverse Recovery Time, trr [ns]

Forward Current, IF [A]

1E-5 1E-4 1E-3 0.01 0.1 1 10

1E-3

0.01

0.1

1

0.01

0.02

0.1

0.05

0.2

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

D uty Fact or, D = t1/t2

Peak Tj = Pdm x Zth jc + TC

0.5

t1

PDM

t2

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FGH20N60SFD Rev. A

FGH20N60SFD 600V, 20A Field Stop IGBT

Mechanical Dimensions

TO247AB (FKS PKG CODE 001)

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FGH20N60SFD 600V, 20A Field Stop IGBT

FGH20N60SFD Rev. A www.fairchildsemi.com9

Rev. I35

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