DSR07S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR07S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 700 mA Surge current (10ms) IFSM 5 A Junction temperature Tj 125 C Tstg -55 to 125 C Storage temperature range *: Mounted on a glass-epoxy circuit board of 20 x 20 mm, pad dimensions of 4 x 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). USC JEDEC JEITA TOSHIBA 1-1E1A Weight: 4.5 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Forward voltage Reverse current Total capacitance Marking Symbol Test Circuit VF (1) VF (2) Test Condition Min Typ. Max Unit IF = 10mA 0.30 IF = 200mA 0.41 VF (3) IF =700mA 0.50 0.55 IR(1) VR = 30V 0.50 5 A CT VR = 0, f = 1 MHz 160 pF V Equivalent Circuit (top view) GN Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 1 2009-04-28 DSR07S30U IF - VF IR - VR 1000 100 50 75 25 10 REVERSE CURRENT FORWARD CURRENT I (uA) Ta=100 IF (mA) 1000 0 -25 1 0.1 75 10 50 1 25 0.1 0.01 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 FORWARD VOLTAGE VF (V) 0.6 0.7 100 10 1 10 15 20 REVERSE VOLTAGE VR (V) 25 TRANSIENT THERMAL IMPEDANCE rth (C / W) ansient thermal impedance rth (/W) f=1MH Ta=25 5 5 10 15 20 REVERSE VOLTAGE VR (V) 25 30 10000 10000 1000 0 0 rth - t CT - VR TOTAL T (pF) TOTAL CAPACITANCE CAPASITANCE CC(pF) Ta=100 100 30 1000 100 Single pulse Ta=25 Mounted on a glass-epoxy circuit board of 20 x 20 mm, pad dimensions of 4 x 4 mm. 10 1 0.001 0.01 0.1 1 10 100 Time t TIME (s)(s) 2 2009-04-28 1000 DSR07S30U RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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