AP4407GM Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low On-resistance Fast Switching Characteristic BVDSS RDS(ON) ID D D D D -30V 14m -10.7A G S SO-8 S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 -30 V 25 V -10.7 A 3 -8.6 A -50 A Continuous Drain Current Continuous Drain Current Pulsed Drain Current PD@TA=25 Units 3 1 IDM Rating Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 50 /W 201125031 AP4407GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) Parameter Typ. -30 - - VGS=-10V, ID=-10A VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA Static Drain-Source On-Resistance Gate Threshold Voltage gfs Forward Transconductance 2 Max. Units -0.015 - V V/ - - 14 m VGS=-4.5V, ID=-5A - - 20 m VDS=VGS, ID=-250uA -1 - -3 V VDS=-10V, ID=-10A - 13 - S o VDS=-30V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS= 25V - - 100 nA ID=-10.7A - 29 46 nC Drain-Source Leakage Current (Tj=25 C) IGSS Min. Drain-Source Breakdown Voltage VGS(th) IDSS Test Conditions 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 14 - nC VDS=-15V - 15 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 12 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 100 - ns tf Fall Time RD=15 - 70 - ns Ciss Input Capacitance VGS=0V - 2600 4100 pF Coss Output Capacitance VDS=-25V - 500 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 370 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-10.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-10.7A, VGS=0V, - 31 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 25 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad. AP4407GM 44 40 o T A =25 C -10V -5.0V -4.5V -4.0V 36 -ID , Drain Current (A) 32 -10V -5.0V -4.5V -4.0V 32 28 24 20 16 T A =150 o C 36 28 -ID , Drain Current (A) 40 V G =-3.0V 12 24 20 16 12 V G =-3.0V 8 8 4 4 0 0 0 1 2 0 3 1 Fig 1. Typical Output Characteristics 2 2 Fig 2. Typical Output Characteristics 16 1.80 I D =-10A I D =-10A V GS = -10V 1.60 o Normalized R DS(ON) T A =25 C 14 RDS(ON) (m ) 1 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 12 1.40 1.20 1.00 0.80 0.60 10 3 5 7 9 -50 11 0 50 100 150 o -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100.00 10.00 -IS(A) -VGS(th) (V) 2 T j =150 o C T j =25 o C 1.00 1 0.10 0 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP4407GM f=1.0MHz 14 10000 I D =-10.7A V DS =-24V 10 Ciss 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 1000 Coss 4 Crss 2 100 0 0 20 40 60 1 80 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100us 10 1ms 10ms -ID (A) 1 100ms 0.1 1s 10s DC T A =25 o C Single Pulse 0.01 Normalized Thermal Response (Rthja) 100 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125 /W 0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q