BSD214SN OptiMOSTM2 Small-Signal-Transistor Product Summary Features VDS * N-channel RDS(on),max * Enhancement mode * Super Logic level (2.5V rated) 20 V VGS=4.5 V 140 mW VGS=2.5 V 250 ID 1.5 A * Avalanche rated * Qualified according to AEC Q101 PG-SOT363 * 100% lead-free; RoHS compliant 6 5 4 * Halogen-free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSD214SN PG-SOT- H6327: 3000 pcs/ reel X5s Yes Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 C 1.5 T A=70 C 1.2 6 Pulsed drain current I D,pulse T A=25 C Avalanche energy, single pulse E AS I D=1.5 A, R GS=25 W 3.7 Reverse diode dv /dt dv /dt I D=1.5 A, V DS=16 V, di /dt =200 A/s, T j,max=150 C 6 Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 C JESD22-A114 -HBM Soldering Temperature A mJ kV/s 12 V 0.5 W -55 ... 150 C 0 (<250V) 260 C IEC climatic category; DIN IEC 68-1 Rev 2.4 Unit 55/150/56 page 1 2013-04-10 BSD214SN Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 A 20 - - Gate threshold voltage V GS(th) V DS=VGS, I D=3.7 A 0.7 0.95 1.2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 C - - 1 V DS=20 V, V GS=0 V, T j=150 C - - 100 V mA Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=0.7 A - 176 250 mW V GS=4.5 V, I D=1.5 A - 111 140 4 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.2 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide 70m thick and 20mm long; they are present on both sides of the PCB. Rev 2.4 page 2 2013-04-10 BSD214SN Parameter Values Symbol Conditions Unit min. typ. max. - 107 143 - 46 62 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 6 9 Turn-on delay time t d(on) - 4.1 - Rise time tr - 7.8 - Turn-off delay time t d(off) - 6.8 - Fall time tf - 1.4 - Gate to source charge Q gs - 0.24 - Gate to drain charge Q gd - 0.2 - Gate charge total Qg - 0.8 - Gate plateau voltage V plateau - 2.2 - V - - 0.5 A - - 6 - 0.8 1.1 V - 8.4 - ns - 1.7 - nC V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=4.5 V, I D=1.5 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=10 V, I D=1.5 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.4 T A=25 C V GS=0 V, I F=1.5 A, T j=25 C V R=10 V, I F=1.5 A, di F/dt =100 A/s page 3 2013-04-10 BSD214SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS4.5 V 0.5 1.5 0.375 ID [A] Ptot [W] 1 0.25 0.5 0.125 0 0 0 40 80 120 0 20 40 TA [C] 60 80 100 120 140 TA [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 1 s 10 s 100 s 1 ms 100 0.5 102 10 ms ZthJA [K/W] ID [A] 0.2 10-1 DC 10-2 0.02 101 0.01 single pulse 100 10-3 10-1 10-2 10-1 100 101 102 VDS [V] Rev 2.4 0.1 0.05 10-5 10-4 10-3 10-2 10-1 100 101 tp [s] page 4 2013-04-10 BSD214SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 8 280 2.2 V 3.5 V 2.5 V 240 3V 6 200 RDS(on) [mW] ID [A] 4.5 V 4 3V 160 3.5 V 120 4.5 V 2.5 V 6V 80 2 2.3 V 40 2V 1.8 V 0 0 0 1 2 3 0 1 2 VDS [V] 3 4 5 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 1.5 8 6 gfs [S] ID [A] 1 25 C 4 0.5 2 150 C 0 0 0 1 2 3 VGS [V] Rev 2.4 0 2 4 6 ID [A] page 5 2013-04-10 BSD214SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.5 A; V GS=4.5 V V GS(th)=f(T j); V DS=VGS; I D=3.7 A parameter: I D 240 1.6 200 1.2 98 % 120 VGS(th) [V] RDS(on) [mW] 160 98 % typ typ 0.8 2% 80 0.4 40 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [C] 60 100 140 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C I F=f(V SD) parameter: T j 103 101 100 Ciss 102 25 C IF [A] C [pF] Coss 10-1 150 C 150 C, 98% 101 Crss 10-2 100 10-3 0 5 10 15 20 VDS [V] Rev 2.4 25 C, 98% 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2013-04-10 3 Safe operating area BSD214SN 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 W VGS=f(Qgate); ID=1.5 A pulsed parameter: Tj(start) parameter: VDD 101 6 10 V 5 4V 16 V 100 VGS [V] IAV [A] 4 25 C 100 C 3 125 C 2 1 10-1 0 100 101 102 0 103 0.5 tAV [s] 1 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms VBR(DSS)=f(Tj); ID=250 A 25 V GS 24 Qg 23 VBR(DSS) [V] 22 21 20 V gs(th) 19 18 Q g(th) 17 Q sw Q gs 16 -60 -20 20 60 100 Q gate Q gd 140 Tj [C] Rev 2.4 page 7 2013-04-10 BSD214SN SOT-363 Package Outline: Reflow soldering: Packing: Dimensions in mm Rev 2.4 page 8 2013-04-10 BSD214SN Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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