TOSHIBA TIM0910-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features * High power - P1dB = 39.5 dBm at 9.5 GHz to 10.5 GHz * High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz * Broadband internally matched * Hermetically sealed package RF Performance Specifications (Ta = 25C) Characteristic Symbol Unit Min. Typ. Max. dBm 38.5 39.5 - dB 5.0 6.0 - IDS A - 3.4 4.4 Power Added Efficiency add % - 22 - Channel-Temperature Rise Tch C - - 80 Output Power at 1dB Compression Point P1dB Power Gain at 1dB Compression Point G1dB Condition VDS = 9V f = 9.5 - 10.5 GHz Drain Current VDS x IDS x Rth (c-c) Electrical Characteristics (Ta = 25C) Characteristic Symbol Condition Unit Min. Typ. Max. gm VDS = 3V IDS = 4.0A mS - 2400 - VGSoff VDS = 3V IDS = 120 mA V -2 -3.5 -5 Saturated Drain Current IDSS VDS = 3V VGS = 0V A - 8.0 10.4 Gate-Source Breakdown Voltage VGSO IGS = -120 A V -5 - - Rth (c-c) Channel to Case C/W - 1.6 2.5 Transconductance Pinch-off Voltage Thermal Resistance The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA. TOSHIBA CORPORATION MW50040196 1/5 TIM0910-8 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Unit Rating Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current ID A 10.4 Total Power Dissipation (Tc = 25C) PT W 60 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 ~ 175 Package Outline (2-11C1B) Handling Precautions for Packaged Type Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2/5 MW50040196 TOSHIBA CORPORATION TIM0910-8 RF Performances TOSHIBA CORPORATION MW50040196 3/5 TIM0910-8 Power Dissipation vs. Case Temperature 4/5 MW50040196 TOSHIBA CORPORATION TIM0910-8 TIM0910-8 S-Parameters (Magn. and Angles) TOSHIBA CORPORATION MW50040196 5/5