Feb.1999
300
0200150100500
250
200
150
100
50
20
16
12
8
4
00 4 8 12 16 20
PD = 275W
TC = 25°C
Pulse Test
6V
5V
VGS =
20V
10V
8V
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
23 5710
123 5710
223 5710
32
tw=10µs
1ms
100ms
100µs
DC
TC = 25°C
Single Pulse
10ms
50
40
30
20
10
00 1020304050
VGS = 20V
10V
8V
6V
5V
TC = 25°C
Pulse Test
PD =
275W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS22SM-9
HIGH-SPEED SWITCHING USE
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
450
±30
—
—
2
—
—
7.0
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.19
2.1
10.0
2800
300
60
60
80
270
80
1.5
—
—
—
±10
1
4
0.24
2.6
—
—
—
—
—
—
—
—
2.0
0.45
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 11A, VGS = 10V
ID = 11A, VGS = 10V
ID = 11A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 11A, VGS = 10V, RGEN = RGS = 50Ω
IS = 11A, VGS = 0V
Channel to case
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
PERFORMANCE CURVES