MITSUBISHI Nch POWER MOSFET FS22SM-9 HIGH-SPEED SWITCHING USE FS22SM-9 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q VDSS ................................................................................ 450V rDS (ON) (MAX) .............................................................. 0.24 ID .......................................................................................... 22A e TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg -- Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 450 30 V V 22 66 275 A A W -55 ~ +150 -55 ~ +150 4.8 C C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS22SM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V 450 30 -- -- -- -- -- -- 10 V V A VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 11A, VGS = 10V ID = 11A, VGS = 10V ID = 11A, VDS = 10V -- 2 -- -- -- 3 0.19 2.1 1 4 0.24 2.6 mA V V 7.0 -- -- -- 10.0 2800 300 60 -- -- -- -- S pF pF pF -- -- -- -- 60 80 270 80 -- -- -- -- ns ns ns ns -- 1.5 2.0 V -- -- 0.45 C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 11A, VGS = 10V, RGEN = RGS = 50 IS = 11A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES DRAIN CURRENT ID (A) 250 200 150 100 50 0 0 DRAIN CURRENT ID (A) 50 50 100 150 100s 101 7 5 3 2 1ms 10ms 100 7 5 3 2 10-1 200 tw=10s 100ms DC TC = 25C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) PD = 275W 20 VGS = 20V 10V 8V TC = 25C Pulse Test 30 6V 20 10 5V 0 102 7 5 3 2 CASE TEMPERATURE TC (C) 40 0 MAXIMUM SAFE OPERATING AREA 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 300 VGS = 20V 10V 16 8V PD = 275W 6V 12 8 5V 4 TC = 25C Pulse Test 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS22SM-9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 TC = 25C Pulse Test 32 24 16 ID = 40A 8 30A 20A DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 TC = 25C Pulse Test 0.4 0.3 VGS = 10V 20V 0.2 0.1 10A 0 0 4 8 12 16 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 VDS = 10V Pulse Test 5 TC = 25C VDS = 50V Pulse Test 32 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 40 24 16 8 0 0 4 8 12 16 75C 150C 3 2 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Ciss Coss 102 7 5 Tch = 25C Crss f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) TC = 25C GATE-SOURCE VOLTAGE VGS (V) 103 7 5 3 2 101 7 5 100 0 10 20 7 5 3 2 3 2 td(off) 3 2 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 102 tf 7 td(on) 5 tr 3 2 101 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS22SM-9 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VDS = 100V 200V 12 400V 8 4 101 7 5 0 40 80 120 160 24 75C 16 8 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 -50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (C) 0.4 25C GATE CHARGE Qg (nC) 3 2 10-1 VGS = 0V Pulse Test TC = 125C 32 0 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (tC) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25C) 40 Tch = 25C ID = 22A -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 D=1 5 3 0.5 2 0.2 -1 10 7 0.1 5 3 2 PDM tw T 0.05 D= tw 0.02 T 0.01 Single Pulse 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999