PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET(R) Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D VDSS = -100V RDS(on) = 60m G ID = -38A S D Description Features of this design are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D2Pak IRF5210SPbF D S TO-262 IRF5210LPbF G D S Gate Drain Source Absolute Maximum Ratings Max. Units Continuous Drain Current, VGS @ -10V Parameter -38 A ID @ TC = 100C Continuous Drain Current, VGS @ -10V -24 IDM Pulsed Drain Current Maximum Power Dissipation -140 PD @TA = 25C PD @TC = 25C Maximum Power Dissipation 170 Linear Derating Factor Gate-to-Source Voltage 1.3 20 W/C V 120 mJ ID @ TC = 25C VGS EAS c IAR Single Pulse Avalanche Energy Avalanche Current EAR Repetitive Avalanche Energy dv/dt TJ Operating Junction and TSTG Storage Temperature Range c 3.1 d c Peak Diode Recovery dv/dt e Parameter Junction-to-Case RJA Junction-to-Ambient (PCB Mount, steady state) www.irf.com -23 A 17 mJ -7.4 -55 to + 150 V/ns C 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Thermal Resistance RJC W g Typ. Max. Units --- 0.75 40 C/W --- 1 08/04/09 IRF5210S/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS VDSS/TJ RDS(on) VGS(th) Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance -100 --- --- -2.0 9.5 --- --- --- --- --- --- --- --- --- --- --- --- --- -0.11 --- --- --- --- --- --- --- 150 22 81 14 63 72 55 4.5 --- --- 60 -4.0 --- -50 -250 100 -100 230 33 120 --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 2780 800 430 --- --- --- gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA m VGS = 10V, ID = -38A V VDS = VGS, ID = -250A S VDS = -50V, ID = -23A A VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V nC ID = -23A VDS = -80V VGS = -10V ns VDD = -50V ID = -23A RG = 2.4 VGS = -10V nH Between lead, f f f 6mm (0.25in.) from package pF and center of die contact VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- -38 ISM (Body Diode) Pulsed Source Current --- --- -140 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 170 1180 -1.6 260 1770 c Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) Starting TJ = 25C, L = 0.46mH RG = 25, IAS = -23A. (See Figure 12) ISD -23A, di/dt -650A/s, VDD V(BR)DSS, TJ 150C. 2 Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25C, IS = -23A, VGS = 0V TJ = 25C, IF = -23A, VDD = -25V di/dt = -100A/s f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Pulse width 300s; duty cycle 2%. When mounted on 1" square PCB (FR-4or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRF5210S/LPbF 1000 1000 100 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 100 10 -4.5V 1 60s PULSE WIDTH BOTTOM VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 10 -4.5V 1 60s PULSE WIDTH Tj = 25C Tj = 150C 0.1 0.1 0.1 1 10 0.1 100 10 100 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) 1 T J = 25C 100 T J = 150C 10 1 VDS = -50V 60s PULSE WIDTH 0.1 ID = -38A VGS = -10V 1.5 1.0 0.5 2 4 6 8 10 12 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 14 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF5210S/LPbF 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= -23A -V GS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss 1000 Crss VDS= -80V VDS= -50V 10.0 VDS= -20V 8.0 6.0 4.0 2.0 100 0.0 1 10 100 0 -VDS, Drain-to-Source Voltage (V) 75 100 125 150 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 50 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 T J = 150C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 25C 10 1 100sec 10 0.1 1msec Tc = 25C Tj = 150C Single Pulse VGS = 0V 10msec 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 25 1.8 1 10 100 1000 -VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5210S/LPbF RD VDS 40 V GS D.U.T. RG 35 - -I D, Drain Current (A) + VDD 30 -10V 25 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 15 10 td(on) 5 tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 T C , Case Temperature (C) 90% VDS Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 J 0.05 R1 R1 J 1 0.02 0.01 0.01 R2 R2 1 2 2 Ci= i/Ri Ci= i/Ri 1E-005 0.0001 Ri (C/W) C 3 3 (sec) 0.128309 0.000069 0.377663 0.001772 0.244513 0.010024 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 R3 R3 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5210S/LPbF L VDS IAS -20V tp VDD A DRIVER 0.01 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) 500 D.U.T RG ID -8.7A -14A BOTTOM -23A 450 TOP 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 13. Maximum Avalanche Energy vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -10V QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 50K 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF5210S/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG V GS * + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test -V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [ VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [ VDD ] Forward Drop Inductor Curent Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 15. For P-Channel HEXFETS www.irf.com 7 IRF5210S/LPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(/ ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 )6 '$7(&2'( <($5 :((. /,1(/ 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 )6 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF5210S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$03/( 7+,6,6$1,5// /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF5210S/LPbF D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/09 10 www.irf.com