Product Specification
PE42851
Page 4 of 12
©2012-2015 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-13014-4 │ UltraCM OS® RFI C Solutions
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
5x5 mm QFN package is MSL3.
Table 5. Truth Table
Path V3 V2 V1
ANT – RX Attenuated L L L
ANT – TX1 L L H
ANT – TX2 L H L
ANT – TX1 and TX2* L H H
ANT – RX H L L
ANT – TX3 H L H
ANT – TX4 H H L
ANT – TX3 and TX4* H H H
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.
Table 4. Absolute Maximum Ratings
Parameter/Condition Symbol Min Max Unit
Supply voltage VDD –0.3 5.5 V
Digital input voltage
(V1, V2, V3) VCTRL –0.3 3.6 V
TX RF input power1(50Ω
source/load impedance) PIN–TX 45 dBm
TX RF input power1
(VSWR ≤ 8:1) PIN–TX 40 dBm
ANT RF input power, unbiased
(VSWR ≤ 8:1) PIN–ANT 27 dBm
RX RF input power1
(VSWR ≤ 8:1) PIN–RX 27 dBm
Storage temperature range TST –65 150 °C
Maximum case temperature TCASE 85 °C
Peak maximum junction
temperature
(10 seconds max) Tj 200 °C
ESD voltage HBM2, all pins VESD,HBM 1500 V
ESD voltage MM3, all pins VESD,MM 200 V
ESD voltage CDM4, all pins VESD,CDM 1000 V
Notes: 1. Supply biased
2. Human Body Model (MIL-STD 883 Method 3015)
3. Machine Model (JEDEC JESD22-A115)
4. Charged Device Model (JEDEC JESD22-C101)
Switching Frequency
The PE42851 has a maximum 10 kHz switching
rate when the internal negative voltage generator
is used (pin 16 = GND). The rate at which the
PE42851 can be switched is only limited to the
switching time (Table 1) if an external negative
supply is provided (pin 16 = VSS_EXT).
Switching frequency describes the time duration
between switching events. Switching time is the
time duration between the point the control signal
reaches 50% of the final value and the point the
output signal reaches within 10% or 90% of its
target value.
Spurious Performance
The typical spurious performance of the PE42851
is –130 dBm when VSS_EXT = 0V (pin 16 = GND). If
further improvement is desired, the internal
negative voltage generator can be disabled by
setting VSS_EXT = –3.4V.
Optional External VSS Control (VSS_EXT)
For proper operation, the VSS_EXT control pin must
be grounded or tied to the Vss voltage specified in
Table 3. When the VSS_EXT control pin is grounded,
FETs in the switch are biased with an internal
voltage generator. For applications that require the
lowest possible spur performance, VSS_EXT can be
applied externally to bypass the internal negative
voltage generator.
Note: * In a 2TX–1RX SP3T configuration, TX1 and TX2 are tied and TX3 and
TX4 are tied respectively. Refer to Application Note AN35 for SP3T
performance data.