OS-DEC-1997 12:44 FROM MAGHATEC TO 811327944493 P.0288 KK mR MAGA A TEC MECHANICAL DATA Dimensions in mm QAO - SG BD950 BD952 BD954 BD956 SILICON EPITAXIAL BASE 9.65 1.656 419 482 4.82 383 533 114 .** 4,08 0/8 _ 1.39 rr | ~ t r 2.66 so TOT - 1 3.42 i ~ 101 pg ele aT +82 MIS ain | oi | an : , 4 12 3 ; Na ! ML wha 726 _! Voit, mn ale fh ay ere ith thi | Hit ft | lk | ww Wk t | | yl. 973 wae 2.28 i O88 2 4t 279 =} 3.92 4.82 5.34 TO-220AB 70220 Plastic Package Pin 1 Base Pin 2 ~ Collector Pin 3 Ernitter Collector connected to Mounting Base. ABSOLUTE MAXIMUM RATINGS (Tease = 25C unless otherwise stated) With their NPN complements BD949 ; 951 and 955 they are intended for use in a wide range of power amplifiers and for switching applications. PNP POWER TRANSISTORS PNP Transistors in a plastic TO-220 package. +953 BD950! BD952| BD9S4| BD856| Voro Collector Base Voltage -60V | -80V \- 100V;- 120V) VcEO Collector Emitter Voltage -BO0V | -80V | - -100V -120V. VeRO Emitter - Base Voltage ~5V le Collector Current -BA lom Peak Collector Current -8A Prot Total Power Dissipation Tamb 25C 40W T stg Storage Temperature Range -65 to 150C Ty Maximum Junction Temperature 150C Semelab pic. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. PECEIUED FROM @1455 SS8843_ 12.@5.1997 13:44 Prelim. 3/94 P. 2ac-DEC 1957 12:44 FROM MAGMATEC TO 1132 734449 Pasa m MAGNA TEC BD950 BD952 BD954 BD956 ELECTRICAL CHARACTERISTICS (tase = 25C uniess otherwise stated) Parameter Test Conditions Min. Typ. . Max. |Unit Vee Base ~ Emitter Voltaga Ig = -2A Vog = AV ; 14 V y Collector = Emitter 3A l= -02A ! C&(sat)" Saturation Voltage oc a | V le=0 Veg = Vopo(max) | ; 0.4 lg=0 Vog = 2Veso(max | Collector Cut-off Current (MAX) 2 mA CBO Ty = 150C lp =O Voe = YVceq(max) | 0.5 leao Emitter Cut-off Current Ig =O Veg =-5V ib 4 mA =0.5A4 Vee = -4V 40 : Ngee DC Current Gain ce ~ lo =-2A Vos =-4V 20 | us le = 0,54 Vog =-4V ; : fxs Transition Frequenc 3 M avency t= 1MHz | me ton Turn-on Time Iccony = 1A i 0.4 | s torr Turn-off Time ~Ilgon) = IB(OFF) = O.1A 0.4 | P ~ Pulse Test: t, = 300us, 6 < 2% Note 1 Veg decreases by abount 2.3mV/K with increasing temperature. THERMAL CHARACTERISTICS Rez-mp -s Thermal Resistance Junction to Mounting Base {| 3.12 | K/W Rega Thermal Resistance Junction to Ambient | 70 KAV QO Ft -l, (2) 10 Vim = 7 30 Vv Me Veo = -20V Vea = 3.5 V len A | Ri = 822 0 go Ae AU a i R2 = 1502 | J _ LOY rer tur RS = 39k too ! | t | my pn SY = 202 | (8%): T a1 Rai t | | = Vas to = 105 10 ~~ i T! T = 500 us | + de t we tle Fig. 1 Switching times waveforms. Fig. 2 Switching times test circuit, Semelab plc. Telaphone (0455) 554565. Telex: 341927. Fax (0455) 552612. Prelirn, 3/94 RECEINED FROM 81455 SS5as43 17.85.1997 13: $5 P. 3