© by SEMIKRON B 5 – 390898
1)
T
case
= 25 °C, unl ess otherwi se specified
3)
I
F
= 250 A, V
R
= 100 V, –di
F
/dt = 100 A/µs
A bsol ute Maxi mum Ra tings
Values
Symbol Conditi ons
1)
Units
V
DS
V
DGR
I
D
I
DM
V
GS
P
D
T
j
, (T
stg)
V
isol
humidity
climate
R
GE
= 20 k
Ω
T
case
= 25 °C
T
case
= 100 °C
1 m s
A C, 1 min., 200 µA
DIN 40 040
DIN IEC 68 T.1
200
200
250
150
750
± 20
1000
–40 ... +150 (125)
2 500
Class F
40/125/56
V
V
A
A
A
V
W
°C
V
Inverse Diode
I
F
= –I
D
I
FM
= –I
DM
10 µs250
1000 A
A
Characteristics
Symbol Conditions
1)
min. typ. max. Units
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS3)
R
DS(on)
g
fs
V
GS
= 0, I
D
= 0,5 mA
V
GS
= V
DS
, I
D
= 1 mA
V
GS
= 0 T
j
= 25 °C
V
DS
= 200 V T
j
= 125 °C
V
GS
= 20 V, V
DS
= 0
V
GS
= 10 V, I
D
= 150 A
V
DS
= 25 V, I
D
= 150 A
200
2,1
–
–
–
–
–
–
3,0
–
–
–
8
200
–
4,0
125
1250
100
8,6
–
V
V
µA
µA
nA
mΩ
S
C
CHC
C
iss
C
oss
C
rss
L
DS
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
–
–
–
–
–
–
34
6,5
2,5
–
700
39
7,5
3,5
20
pF
nF
nF
nF
nH
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V
I
D
= 15 0 A
V
GS
= + 10 V
R
G
= 4,7
Ω
–
–
–
–
100
100
700
250
–
–
–
–
ns
ns
ns
ns
I nverse Diode
8)
V
SD
t
rr
Q
rr
I
RR
I
F
= 250 A, V
GS
= 0 V
T
j
= 25 °C
3)
T
j
= 150 °C
3)
T
j
= 25 °C
3)
T
j
= 150 °C
3)
–
–
–
–
–
–
160
–
12
–
1,5
–
–
–
–
V
ns
ns
µC
Α
Thermal characteris tics
R
thjc
R
thch
per MOSF ET
M
1
, surface 10 µm, per m odule –
––
–0,12
0,038 °C/W
°C/W
Mechanical Data
M
1
M
2
a
w
to heatsink, SI Units (M6)
to heatsink, US Units
for terminals, SI Units (M6)
for terminals, US Unit s
3
27
2,5
22
–
–
–
–
–
–
–
–
5
44
5
44
5x9,81
325
Nm
lb.in.
Nm
lb.in.
m/s
2
g
Case → B 5 – 42 D 56
SEMITRANS
®
M
Power MOSFET Modules
250 A, 200 V, 8,6 mΩ
SKM 253 B 020
Features
•
N Channel, enhancement mode
•
Short in ternal connections and
low inductance case avoid
oscillations
•
Isolated copper baseplate using
Al
2
O
3
ceramic Direct Copper
Bonding Techn ology (DCB)
•
All electrical connections on top
for easy busbaring
•
Large clearance (13 mm) and
creepage distances (20 mm)
•
UL recognized, file no. E63 532
Typical Applicati ons
•
DC servo and robot drives
•
DC ch oppers
•
UPS equipment
•
Plasma cutting
•
No t suitable for line ar
amplification
This is an electrostatic dischar-
ge sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Suitable mounting hardware:
Ident No. 33321100
(for 10 SEMITRANS 3)
Screws → B 6 – 4
SEMITRANS M3
B 5 – 40 0898 © by SEMIKRON
M253B020.XLS-6
0
100
200
300
0 40 80 120 160
TCase °C
ID
A
VGS>=10V
M253B020.XLS-5
0
4
8
12
16
0 40 80 120 160
TJ°C
RDS(on)
mΩ
98%
t
y
p.
I=150A
VGS=10V
M253B020.XLS-4
0
200
400
600
800
02468
V
GS V
ID
A
M253B020.XLS-3
0
200
400
600
800
024681012
P
tot=1,0kW
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8
910
V
CE
=20
VDS V
ID
A
M253B020.XLS-2
1
10
100
1000
1 10 100 1000
VDS V
ID
A
DC
tp=10µs
100µs
1ms
10ms
100ms
RDSon=VDS/ID
M253B020.XLS-1
0
0,2
0,4
0,6
0,8
1
1,2
04080120160
T
Case °C
PD
kW
Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C Fig. 4 Transfer characteristic, tp = 80 µs, VDS = 25 V
Fig. 1 Rated power dissipation vs. temperature Fig. 2 Maximum safe operating area, single pulse
Fig. 5 On-resistance vs. temperature Fig. 6 Rated current vs. temperature
Tjm = 150 °C
Tc = 25 °C
D = 0,01
SKM 253 B 020
© by SEMIKRON B 5 – 410898
M253B020.XLS-14
0
1
2
3
4
5
-50 0 50 100 150
T
j
°C
V
GS(th)
V
98%
typ.
2%
V
DS
=V
GS
I
D
=1mA
M253B020.XLS-11
0
100
200
300
0123
V
SD
V
I
F
A
125°C
25°C
M253B020.XLS-10
0
2
4
6
8
10
12
14
16
00,511,52
Q
gls
mC
V
GS
VI
D
=150A
V
DS
=40V
V
DS
=160V
M253B020.XLS-9
1
10
100
1000
0 1020304050
V
DS
V
C
nF
C
iss
C
os
C
rs
M253B020.XLS-8
0
100
200
300
012345
-di/dt kA/µs
V
DS
V
M253B020.XLS-7
180
190
200
210
220
230
-50 0 50 100 150
T
J
°C
V
(BR)DSS
V
Fig. 9 Typ. capacitances vs. drain-source voltage Fig. 10 Gate charge characteristic, I
Dp
= 250 A
Fig. 7 Breakdown voltage vs. temperature Fig. 8 Drain-source voltage derating (L
DS
)
Fig. 11 Diode for ward characteristic, t
p
= 80 µs Fig. 14 Gate-source threshold voltage
© by SEMIKRONB 5 – 42 0898
M253B020.XLS-52
0,0001
0,001
0,01
0,1
1
0,00001 0,0001 0,001 0,01 0,1 1
t
p
s
Z
thjcp
°C/W
D=1
0,
0,2
0,1
0,05
0,02
0,01
si ngle pul se t
p
t
c
D=t
p
/t
c
=t
p
*f
Fig. 52 Thermal impedance under pulse conditions
SEMIT RANS M 3
Case D 56
SKM 253 B 020
Dim ens i on s in mm
SKM 253 B 020
