PESD5V0V1BB,115 - NXP Semiconductors / Philips Semiconductors

1. Product proﬁle

1.1 General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in

small Surface-Mounted Device (SMD) plastic packages designed to protect one signal

line from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

1.4 Quick reference data

PESD5V0V1BA;PESD5V0V1BB;

PESD5V0V1BL

Very low capacitance bidirectional ESD protection diodes

Rev. 01 — 28 July 2009 Product data sheet

Table 1. Product overview

Type number Package Package conﬁguration

NXP JEITA

PESD5V0V1BA SOD323 SC-76 very small

PESD5V0V1BB SOD523 SC-79 ultra small and ﬂat lead

PESD5V0V1BL SOD882 - leadless ultra small

nBidirectional ESD protection of one line nESD protection up to 30 kV

nVery low diode capacitance: Cd=11pF nIEC 61000-4-2; level 4 (ESD)

nMax. peak pulse power: PPP =45W nIEC 61000-4-5 (surge); IPP = 4.8 A

nLow clamping voltage: VCL = 12.5 V nAEC-Q101 qualiﬁed

nUltra low leakage current: IRM <1nA

nComputers and peripherals nCommunication systems

nAudio and video equipment nPortable electronics

nCellular handsets and accessories n10/100 Mbit/s Ethernet

nSubscriber Identity Module (SIM) card

protection

nFireWire

Table 2. Quick reference data

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage - - 5 V

Cddiode capacitance f = 1 MHz; VR=0V- 1113pF

Product data sheet Rev. 01 — 28 July 2009 2 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

2. Pinning information

[1] The marking bar indicates pin 1.

3. Ordering information

4. Marking

5. Limiting values

Table 3. Pinning

Pin Description Simpliﬁed outline Graphic symbol

PESD5V0V1BA; PESD5V0V1BB

1 cathode (diode 1) [1]

2 cathode (diode 2)

PESD5V0V1BL

1 cathode (diode 1) [1]

2 cathode (diode 2)

001aab540

sym045

Transparent

top view

sym045

Table 4. Ordering information

Type number Package

Name Description Version

PESD5V0V1BA SC-76 plastic surface-mounted package; 2 leads SOD323

PESD5V0V1BB SC-79 plastic surface-mounted package; 2 leads SOD523

PESD5V0V1BL - leadless ultra small plastic package; 2 terminals;

body 1.0 ×0.6 ×0.5 mm SOD882

Table 5. Marking codes

Type number Marking code

PESD5V0V1BA 1K

PESD5V0V1BB Z9

PESD5V0V1BL X1

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPP peak pulse power tp= 8/20 µs[1] -45W

IPP peak pulse current tp= 8/20 µs[1] - 4.8 A

Product data sheet Rev. 01 — 28 July 2009 3 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[1] Device stressed with ten non-repetitive ESD pulses.

Per device

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Table 7. ESD maximum ratings

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Max Unit

VESD electrostatic discharge voltage IEC 61000-4-2

(contact discharge) [1] -30kV

machine model - 2 kV

MIL-STD-883 (human

body model) -16kV

Table 8. ESD standards compliance

Standard Conditions

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3B (human body model) > 8 kV

Table 6. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (µs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 µs

50 % IPP; 20 µs

001aaa631

IPP

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 ns to 1 ns

Product data sheet Rev. 01 — 28 July 2009 4 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

6. Characteristics

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

Table 9. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage - - 5 V

IRM reverse leakage current VRWM = 5 V - < 1 10 nA

VBR breakdown voltage IR= 5 mA 5.8 6.8 7.8 V

Cddiode capacitance f = 1 MHz;

VR=0V - 1113pF

VCL clamping voltage IPP = 4.8 A [1] - - 12.5 V

rdif differential resistance IR=5mA --35Ω

Tamb =25°C

Fig 3. Peak pulse power as a function of exponential

pulse duration; typical values Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical

values

tp (µs)

110

102

006aab606

102

103

PPP

(W)

Tj (°C)

0 20015050 100

001aaa193

0.4

0.8

1.2

PPP

PPP(25°C)

Product data sheet Rev. 01 — 28 July 2009 5 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

f = 1 MHz; Tamb =25°C

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Relative variation of reverse leakage current

as a function of junction temperature; typical

values

Fig 7. V-I characteristics for a bidirectional ESD protection diode

VR (V)

054231

006aab607

(pF)

006aab608

10−1

102

103

10−2

Tj (°C)

−100 150100050−50

IRM

IRM(25°C)

006aaa676

−VCL −VBR −VRWM VCL

VBR

VRWM

−IRM

IRM

−IR

−IPP

IPP

−+

Product data sheet Rev. 01 — 28 July 2009 6 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

Fig 8. ESD clamping test setup and waveforms

006aab609

50 Ω

CZDUT

(DEVICE

UNDER

TEST)

GND

450 ΩRG 223/U

50 Ω coax

ESD TESTER

acc. to IEC 61000-4-2

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 10 A/div

horizontal scale = 15 ns/div

GND

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 10 A/div

horizontal scale = 15 ns/div

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 10 V/div

horizontal scale = 100 ns/div

GND

clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

GND

vertical scale = 10 V/div

horizontal scale = 100 ns/div

Product data sheet Rev. 01 — 28 July 2009 7 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

7. Application information

The PESD5V0V1Bx series is designed for the protection of one bidirectional data or

signal line from the damage caused by ESD and surge pulses. The devices may be used

on lines where the signal polarities are both, positive or negative with respect to ground.

The PESD5V0V1Bx series provides a surge capability of 45 W per line for an 8/20 µs

waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

8. Test information

8.1 Quality information

This product has been qualiﬁed in accordance with the Automotive Electronics Council

(AEC) standard

Q101 - Stress test qualiﬁcation for discrete semiconductors

, and is

suitable for use in automotive applications.

Fig 9. Application diagram

006aab610

PESD5V0V1Bx

GND

line to be protected

Product data sheet Rev. 01 — 28 July 2009 8 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 10. Package outline

PESD5V0V1BA (SOD323/SC-76) Fig 11. Package outline

PESD5V0V1BB (SOD523/SC-79)

Fig 12. Package outline PESD5V0V1BL (SOD882)

03-12-17Dimensions in mm

0.25

0.10

0.45

0.15

2.7

2.3 1.8

1.6

0.40

0.25

1.1

0.8

1.35

1.15

02-12-13Dimensions in mm

1.65

1.55 1.25

1.15

0.17

0.11

0.34

0.26

0.65

0.58

0.85

0.75

03-04-17Dimensions in mm

0.55

0.47

0.65

0.62

0.55 0.50

0.46

cathode marking on top side

1.02

0.95

0.30

0.22

0.30

0.22

Table 10. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 8000 10000

PESD5V0V1BA SOD323 4 mm pitch, 8 mm tape and reel -115 - -135

PESD5V0V1BB SOD523 2 mm pitch, 8 mm tape and reel - -315 -

4 mm pitch, 8 mm tape and reel -115 - -135

PESD5V0V1BL SOD882 2 mm pitch, 8 mm tape and reel - - -315

Product data sheet Rev. 01 — 28 July 2009 9 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

11. Soldering

Fig 13. Reﬂow soldering footprint PESD5V0V1BA (SOD323/SC-76)

Fig 14. Wave soldering footprint PESD5V0V1BA (SOD323/SC-76)

0.951.65

2.2

2.1

3.05

solder lands

solder resist

occupied area

solder paste

0.5

(2×)

0.6

(2×)

0.6 (2×)0.5 (2×)

sod323_fr

Dimensions in mm

1.5 (2×)

2.9

1.2

(2×)

2.75

sod323_fw

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Product data sheet Rev. 01 — 28 July 2009 10 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

Reﬂow soldering is the only recommended soldering method.

Fig 15. Reﬂow soldering footprint PESD5V0V1BB (SOD523/SC-79)

Reﬂow soldering is the only recommended soldering method.

Fig 16. Reﬂow soldering footprint PESD5V0V1BL (SOD882)

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

0.6

(2×)

0.5

(2×)

2.15

1.1

0.7

(2×)

0.8

(2×)

1.2

sod523_fr

solder lands

solder resist

occupied area

solder paste

sod882_fr

0.9

0.3

(2×)

R0.05 (8×)

0.6

(2×) 0.7

(2×)

0.4

(2×)

1.3

0.7

Dimensions in mm

Product data sheet Rev. 01 — 28 July 2009 11 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

12. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD5V0V1BA_BB_BL_1 20090728 Product data sheet - -

Product data sheet Rev. 01 — 28 July 2009 12 of 13

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PESD5V0V1BA/BB/BL

Very low capacitance bidirectional ESD protection diodes

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 28 July 2009

Document identifier: PESD5V0V1BA_BB_BL_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 7

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13