SPECIFICATIONS General The PTC 2000 and PTC 2001 Powerlith II series of silicon power transistor modules consists of dual darlingtons with free wheeling diodes mounted in the Powerlith Il package. The darlingtons are mounted in series internally, with the collector terminals isolated from the package. These modules are ideally suited for applications in switching power supplies, pulse-width- modulated regulators and inverter or converter circuits operating off 480 volt lines. series PIC 2OOO, PTC 200% NPN Silicon Power Darlington Transistors 50 Amperes 1000 Volts FEATURES @ Isolated Collectors High Voltage Rating 1000 Volts Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS @ High Current Switching Power Supplies @ Inverters/Regulators @ Pulse-Width-Modulated (PWM) System Control Circuitry Fiectrical Bi El/C2 B2 Package outline (Non-dEDEC) MILLIMETERS INCHES Powerlith I DIM MIN MAX MIN MAX A 91 93 3.58 3.66 seminal B 79 81 3.11 3.19 ermina Cc 67 69 2.64 2.71 8-32 UNC py 12 14 0.47 0.55 me E 5 ? 0.20 0.27 F 5 7 0.20 0.27 H G 7 9 0.27 0.35 H 9 1 0.35 0.43 i rs 13 0.43 051 H J 15 17 0.59 0.67 K 31 33 1.22 1.30 L 7 9 0.27 0.35 M 2 4 0.08 0.16 MoM M MP N 9 rs 0.35 0.43 Tit Xx 12 14 0.47 0.55 He P 15 25 0.06 0.10 E R 15 2.5 0.06 0.10 Lg S 245 26.5 0.96 1.04 1 R > | T 26 28 1.02 1.10 vy | U 31 33 1.22 1.30 t ' vu V 6 8 0.24 0.31 Ww Ww 2 4 0.08 0.16 x 9 u 0.35 0.43 314SERIES PTC 2000/2001 Fast Switching, High Voltage Dual Power Darlington Module Absolute maximum ratings Description PTC 2000 PTC 2001 Unit Conditions VCBO Collector-Base Voltage 1000 1000 Volts VCEO(sus) Collector-Emitter Voltage 900 850 Volts Ic Collector Current Continuous 50 A Ie Collector Current Peak 100 A IB Base Current Continuous 20 A IB Base Current Peak 50 A Pp Maximum Power Dissipation 350* Ww Tc = 25C TS, Tstg Junction Operating and _ o Storage Temperature Range Sto +150 c > - . led ee or~ . Lo ve wenn eden cs cf , Electrical characteristics at 25C (unless otherwise specified) Description Type Min. Typ. Max. Unit Conditions VCEO(sus) Collector-Emitter PTC 2000 900 V _ Sustaining Voltage PTC 2001 850 Vv IC =2A L=2mH ICEO Collector-Cutoff Current All 1.0 mA Atrated collector voltage IEBO Emitter-Cutoff Current All 350 mA VEB = 6V FBSOA Forward Bias _ _ Safe Operating Area All 25 A VCE = 14V, Non Rep. tp =: 1s hFE DC Curent Gain fj All 75 100 300 ic =50A VCE=5V VCE(SAT) Collector-Emitter [JJ ~ ~ Saturation Voltage All 25 Vv IC=50A Ip=1A VBE(SAT) Base - Emitter [Jj _ _ Saturation Voltage All 3.0 Vv IC=S0A IB=1A Switching characteristics resistive load at 25C Description Type Min. Typ. Max. Unit Conditions td Delay Time All 0.4 BS te Rise Time All 3.0 BS IC =50A VBE = 6.0V Vcc =600V Ip1=1A tstg Storage Time All 10 BS Ip2 =3A PW =50us tf Fall Time All 5 BS Thermal and mechanical characteristics Description Type Min. Typ. Max. Unit Conditions ReJC Thermal Resistance All 0.35 CW Junction to Case 0. Isolation Between Terminals and Package Type All Powerlith Il Mounting Surface 2,000 V Darlington Circuit All Dual Darlington Figure 1, Preceding Page Free wheeling diode characteristics at 25C Description Type Min. Typ. Max. Unit Conditions VE Forward Voltage All 1.2 2.0 Vv Ic = 50A tr Reverse Recovery Time All 0.7 1.0 BS IF =25A_ di/dt = 50A/pus PTC 2000 1000 Vv PIV Peak Inverse Voltage PTC 2001 1000 Vv El PULSE TEST: PW = 300 ys, DUTY CYCLE < 2% *Per Darlington 315