PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16
TO-39
Metal Can Package
High Speed Switching and Linear amplifier Appliances in Military,
Industrial and Commercial Equipment.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL 2N5415 2N5416 UNITS
Collector Emitter Voltage VCEO 200 300 V
Collector Base Voltage VCBO 200 350 V
Emitter Base Voltage VEBO 46V
Collector Current Continuous IC(--------------------1------------------
A
Base Current Continuous IB(-----------------0.5------------------
A
Power Dissipation @ Ta=50ºC PD(--------------------1------------------
W
Derate Above 25ºC mW/ºC
Power Dissipation@ Tc=25ºC PD(------------------10------------------- W
Derate Above 25ºC
Junction Temperature Tj (--------------------200----------------
mW/ºC
Operating And Storage Junction Tstg -65 to +200 ºC
Temperature Range
THERMAL RESISTANCE
Junction to Ambient Rth(j-a) 150 ºC/W
Junction to Case Rth(j-c) 17.5 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION 2N5415 2N5416 UNITS
Collector Emitter Breakdown Voltage BVCEO(sus)*I
C=50mA,IB=0 >200 >300 V
Collector Cut off Current ICBO VCB=175V, IE=0 <50 µA
VCB=280V, IE=0 <50 µA
Collector Cutoff Current ICEO VCE=150V, IB=0 <50 µA
VCE=250V, IB=0 <50 µA
Emitter Cut off Current IEBO VEB=4V, IC=0 <20 µA
VEB=6V, IC=0 <20 µA
Collector Emitter Saturation Voltage VCE(Sat) IC=50mA,IB=5mA <2.5 <2 V
Base Emitter Saturation Voltage VBE(Sat) IC=50mA,IB=5mA <1.5 <1.5 V
DC Current Gain hFE*I
C=50mA,VCE=10V 30-150 30-120
Continental Device India Limited Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company