SST36VF1601C-70-4C-EKE - Silicon Storage Technology

S71249-07-EOL 02/08

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

EOL Data Sheet

16 Mbit (x8/x16) Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FEATURES:

• Organized as 1M x16 or 2M x8

• Dual Bank Architecture

– 16 Mbit Bottom Sector Protection

- SST36VF1601C: 12 Mbit + 4 Mbit

– 16 Mbit Top Sector Protection

- SST36VF1602C: 4 Mbit + 12 Mbit

• Single 2.7-3.6V for Read and Write Operations

• Superior Reliability

– Endurance: 100,000 cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 6 mA typical

– Standby Current: 4 µA typical

– Auto Low Power Mode: 4 µA typical

• Hardware Sector Protection/WP# Input Pin

– Protects the 4 outermost sectors (8 KWord)

in the larger bank by driving WP# low and

unprotects by driving WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading

array data

• Byte# Pin

– Selects 8-bit or 16-bit mode

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Chip-Erase Capability

• Block-Erase Capability

– Uniform 32 KWord blocks

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

– SST: 128 bits

– User: 128 bits

• Fast Read Access Time

– 70 ns

• Latched Address and Data

• Fast Erase and Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• Conforms to Common Flash Memory Interface (CFI)

• JEDEC Standards

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-ball TFBGA (6mm x 8mm)

– 48-lead TSOP (12mm x 20mm)

– Non-Pb (lead-free) packages available

• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST36VF1601C and SST36VF1602C are 1M x16 or

2M x8 CMOS Read/Write Flash Memory manufactured

with SST’s proprietary, high performance CMOS Super-

Flash technology. The split-gate cell design and thick oxide

tunneling injector attain better reliability and manufacturabil-

ity compared with alternate approaches. The devices write

(Program or Erase) with a 2.7-3.6V power supply and con-

form to JEDEC standard pinouts for x8/x16 memories.

Featuring high performance Program, these devices pro-

vide a typical Program time of 7 µsec and use the Toggle

Bit, Data# Polling, or RY/BY# to detect the completion of

the Program or Erase operation. To protect against inad-

vertent write, the devices have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of 10,000

cycles. Data retention is rated at greater than 100 years.

These devices are suited for applications that require con-

venient and economical updating of program, configura-

tion, or data memory. For all system applications, the

devices significantly improve performance and reliability,

while lowering power consumption. Since for any given

voltage range, the SuperFlash technology uses less cur-

rent to program and has a shorter erase time, the total

energy consumed during any Erase or Program operation

is less than alternative flash technologies. These devices

also improve flexibility while lowering the cost for program,

data, and configuration storage applications.

SST36VF1601C / 1602C16Mb (x8/x16) Dual-Bank Flash Memory

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

SuperFlash technology provides fixed Erase and Program

times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

To meet high-density, surface-mount requirements, these

devices are offered in 48-ball TFBGA and 48-lead TSOP

packages. See Figures 5 and 6 for pin assignments.

Device Operation

Memory operation functions are initiated using standard

microprocessor write sequences. A command is written by

asserting WE# low while keeping CE# low. The address

bus is latched on the falling edge of WE# or CE#, which-

ever occurs last. The data bus is latched on the rising edge

of WE# or CE#, whichever occurs first.

Auto Low Power Mode

These devices also have the Auto Lower Power mode

which puts them in a near standby mode within 500 ns

after data has been accessed with a valid Read operation.

This reduces the IDD active Read current to 4 µA typically.

While CE# is low, the devices exit Auto Low Power mode

with any address transition or control signal transition used

to initiate another Read cycle, with no access time penalty.

Read Operation

The Read operation is controlled by CE# and OE#; both

have to be low for the system to obtain data from the out-

puts. CE# is used for device selection. When CE# is high,

the chip is deselected and only standby power is con-

sumed. OE# is the output control and is used to gate data

from the output pins. The data bus is in a high impedance

state when either CE# or OE# is high. Refer to the Read

cycle timing diagram for further details (Figure 7).

Program Operation

These devices are programmed on a word-by-word or

byte-by-byte basis depending on the state of the BYTE#

pin. Before programming, one must ensure that the sector

which is being programmed is fully erased.

The Program operation is accomplished in three steps:

1. Software Data Protection is initiated using the

three-byte load sequence.

2. Address and data are loaded.

During the Program operation, the addresses are

latched on the falling edge of either CE# or WE#,

whichever occurs last. The data is latched on the

rising edge of either CE# or WE#, whichever

occurs first.

3. The internal Program operation is initiated after

the rising edge of the fourth WE# or CE#, which-

ever occurs first. The Program operation, once ini-

tiated, will be completed typically within 7 µs.

See Figures 8 and 9 for WE# and CE# controlled Program

operation timing diagrams and Figure 23 for flowcharts.

During the Program operation, the only valid reads are

Data# Polling and Toggle Bit. During the internal Program

operation, the host is free to perform additional tasks. Any

commands issued during an internal Program operation

are ignored.

Sector- (Block-) Erase Operation

These devices offer both Sector-Erase and Block-Erase

operations. These operations allow the system to erase the

devices on a sector-by-sector (or block-by-block) basis. The

sector architecture is based on a uniform sector size of 2

KWord. The Block-Erase mode is based on a uniform block

size of 32 KWord. The Sector-Erase operation is initiated by

executing a six-byte command sequence with a Sector-

Erase command (30H) and sector address (SA) in the last

bus cycle. The Block-Erase operation is initiated by execut-

ing a six-byte command sequence with Block-Erase com-

mand (50H) and block address (BA) in the last bus cycle.

The sector or block address is latched on the falling edge of

the sixth WE# pulse, while the command (30H or 50H) is

latched on the rising edge of the sixth WE# pulse. The inter-

nal Erase operation begins after the sixth WE# pulse. Any

commands issued during the Sector- or Block-Erase opera-

tion are ignored except Erase-Suspend and Erase-

Resume. See Figures 13 and 14 for timing waveforms.

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

Chip-Erase Operation

The devices provide a Chip-Erase operation, which allows

the user to erase all sectors/blocks to the “1” state. This is

useful when a device must be quickly erased.

The Chip-Erase operation is initiated by executing a six-

byte command sequence with Chip-Erase command (10H)

at address 555H in the last byte sequence. The Erase

operation begins with the rising edge of the sixth WE# or

CE#, whichever occurs first. During the Erase operation,

the only valid Read is Toggle Bit or Data# Polling. Any com-

mands issued during the Chip-Erase operation are

ignored. See Table 5 for the command sequence, Figure

12 for timing diagram, and Figure 27 for the flowchart.

When WP# is low, any attempt to Chip-Erase will be

ignored.

Erase-Suspend/Erase-Resume Operations

The Erase-Suspend operation temporarily suspends a

Sector- or Block-Erase operation thus allowing data to be

read from any memory location, or program data into any

sector/block that is not suspended for an Erase operation.

The operation is executed by issuing a one-byte command

sequence with Erase-Suspend command (B0H). The

device automatically enters read mode within 20 µs after

the Erase-Suspend command had been issued. Valid data

can be read from any sector or block that is not suspended

from an Erase operation. Reading at address location

within erase-suspended sectors/blocks will output DQ2 tog-

gling and DQ6 at “1”. While in Erase-Suspend mode, a Pro-

gram operation is allowed except for the sector or block

selected for Erase-Suspend. To resume Sector-Erase or

Block-Erase operation which has been suspended, the

system must issue an Erase-Resume command. The

operation is executed by issuing a one-byte command

sequence with Erase Resume command (30H) at any

address in the one-byte sequence.

Write Operation Status Detection

These devices provide one hardware and two software

means to detect the completion of a Write (Program or

Erase) cycle in order to optimize the system Write cycle

time. The hardware detection uses the Ready/Busy# (RY/

BY#) output pin. The software detection includes two sta-

tus bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The

End-of-Write detection mode is enabled after the rising

edge of WE#, which initiates the internal Program or Erase

operation.

The actual completion of the nonvolatile write is asynchro-

nous with the system; therefore, either a Ready/Busy# (RY/

BY#), a Data# Polling (DQ7), or Toggle Bit (DQ6) Read may

be simultaneous with the completion of the Write cycle. If

this occurs, the system may get an erroneous result, i.e.,

valid data may appear to conflict with either DQ7 or DQ6. In

order to prevent spurious rejection if an erroneous result

occurs, the software routine should include a loop to read

the accessed location an additional two (2) times. If both

Reads are valid, then the Write cycle has completed, other-

wise the rejection is valid.

Ready/Busy# (RY/BY#)

The devices include a Ready/Busy# (RY/BY#) output sig-

nal. RY/BY# is an open drain output pin that indicates

whether an Erase or Program operation is in progress.

Since RY/BY# is an open drain output, it allows several

devices to be tied in parallel to VDD via an external pull-up

resistor. After the rising edge of the final WE# pulse in the

command sequence, the RY/BY# status is valid.

When RY/BY# is actively pulled low, it indicates that an

Erase or Program operation is in progress. When RY/BY#

is high (Ready), the devices may be read or left in standby

mode.

Byte/Word (BYTE#)

The device includes a BYTE# pin to control whether the

device data I/O pins operate x8 or x16. If the BYTE# pin is

at logic “1” (VIH) the device is in x16 data configuration: all

data I/0 pins DQ0-DQ15 are active and controlled by CE#

and OE#.

If the BYTE# pin is at logic “0”, the device is in x8 data con-

figuration: only data I/O pins DQ0-DQ7 are active and con-

trolled by CE# and OE#. The remaining data pins DQ8-

DQ14 are at Hi-Z, while pin DQ15 is used as the address

input A-1 for the Least Significant Bit of the address bus.

Data# Polling (DQ7)

When the devices are in an internal Program operation, any

attempt to read DQ7 will produce the complement of the

true data. Once the Program operation is completed, DQ7

will produce true data. During internal Erase operation, any

attempt to read DQ7 will produce a ‘0’. Once the internal

Erase operation is completed, DQ7 will produce a ‘1’. The

Data# Polling is valid after the rising edge of fourth WE# (or

CE#) pulse for Program operation. For Sector-, Block-, or

Chip-Erase, the Data# Polling is valid after the rising edge

of sixth WE# (or CE#) pulse. See Figure 10 for Data# Poll-

ing (DQ7) timing diagram and Figure 24 for a flowchart.

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

Toggle Bits (DQ6 and DQ2)

During the internal Program or Erase operation, any con-

secutive attempts to read DQ6 will produce alternating “1”s

and “0”s, i.e., toggling between 1 and 0. When the internal

Program or Erase operation is completed, the DQ6 bit will

stop toggling. The device is then ready for the next opera-

tion. The toggle bit is valid after the rising edge of the fourth

WE# (or CE#) pulse for Program operations. For Sector-,

Block-, or Chip-Erase, the toggle bit (DQ6) is valid after the

rising edge of sixth WE# (or CE#) pulse. DQ6 will be set to

“1” if a Read operation is attempted on an Erase-sus-

pended Sector/Block. If Program operation is initiated in a

sector/block not selected in Erase-Suspend mode, DQ6 will

toggle.

An additional Toggle Bit is available on DQ2, which can be

used in conjunction with DQ6 to check whether a particular

sector is being actively erased or erase-suspended. Table 1

shows detailed status bit information. The Toggle Bit (DQ2)

is valid after the rising edge of the last WE# (or CE#) pulse

of a Write operation. See Figure 11 for Toggle Bit timing

diagram and Figure 24 for a flowchart.

Note: DQ7, DQ6, and DQ2 require a valid address when reading

status information.

Data Protection

The devices provide both hardware and software features

to protect nonvolatile data from inadvertent writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or CE# pulse of less than 5

ns will not initiate a Write cycle.

VDD Power Up/Down Detection: The Write operation is

inhibited when VDD is less than 1.5V.

Write Inhibit Mode: Forcing OE# low, CE# high, or WE#

high will inhibit the Write operation. This prevents inadvert-

ent writes during power-up or power-down.

Hardware Block Protection

The devices provide hardware block protection which pro-

tects the outermost 8 KWord in the larger bank. The block

is protected when WP# is held low. See Figures 1, 2, 3,

and 4 for Block-Protection location.

A user can disable block protection by driving WP# high.

This allows data to be erased or programmed into the pro-

tected sectors. WP# must be held high prior to issuing the

Write command and remain stable until after the entire

Write operation has completed.

Hardware Reset (RST#)

The RST# pin provides a hardware method of resetting the

devices to read array data. When the RST# pin is held low

for at least TRP, any in-progress operation will terminate and

return to Read mode (see Figure 20). When no internal

Program/Erase operation is in progress, a minimum period

of TRHR is required after RST# is driven high before a valid

Read can take place (see Figure 19).

The Erase operation that has been interrupted needs to be

re-initiated after the device resumes normal operation

mode to ensure data integrity.

Software Data Protection (SDP)

These devices provide the JEDEC standard Software Data

Protection scheme for all data alteration operations, i.e.,

Program and Erase. Any Program operation requires the

inclusion of the three-byte sequence. The three-byte load

sequence is used to initiate the Program operation, provid-

ing optimal protection from inadvertent Write operations,

e.g., during the system power-up or power-down. Any

Erase operation requires the inclusion of the six-byte

sequence. The devices are shipped with the Software Data

Protection permanently enabled. See Table 5 for the spe-

cific software command codes. During SDP command

sequence, invalid commands will abort the device to Read

mode within TRC. The contents of DQ15-DQ8 can be VIL or

VIH, but no other value during any SDP command

sequence.

TABLE 1: WRITE OPERATION STATUS

Status DQ7DQ6DQ2RY/BY#

Normal

Operation

Standard

Program

DQ7# Toggle No Toggle 0

Standard

Erase

0 Toggle Toggle 0

Erase-

Suspend

Mode

Read From

Erase

Suspended

Sector/Block

1 1 Toggle 1

Read From

Non-Erase

Suspended

Sector/Block

Data Data Data 1

Program DQ7# Toggle No Toggle 0

T1.2 1249

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

Common Flash Memory Interface (CFI)

These devices also contain the CFI information to

describe the characteristics of the devices. In order to

enter the CFI Query mode, the system must write the

three-byte sequence, same as the Software ID Entry com-

mand with 98H (CFI Query command) to address 555H in

the last byte sequence. See Figure 16 for CFI Entry and

Read timing diagram. Once the device enters the CFI

Query mode, the system can read CFI data at the

addresses given in Tables 6 through 8. The system must

write the CFI Exit command to return to Read mode from

the CFI Query mode.

Security ID

The SST36VF160xC devices offer a 256-bit Security ID

space. The Secure ID space is divided into two 128-bit seg-

ments—one factory programmed segment and one user

programmed segment. The first segment is programmed

and locked at SST with a unique, 128-bit number. The user

segment is left un-programmed for the customer to pro-

gram as desired. To program the user segment of the

Security ID, the user must use the Security ID Program

command. End-of-Write status is checked by reading the

toggle bits. Data# Polling is not used for Security ID End-of-

Write detection. Once programming is complete, the Sec

ID should be locked using the User Sec ID Program Lock-

Out. This disables any future corruption of this space. Note

that regardless of whether or not the Sec ID is locked, nei-

ther Sec ID segment can be erased. The Secure ID space

can be queried by executing a three-byte command

sequence with Query Sec ID command (88H) at address

555H in the last byte sequence. See Figure 18 for timing

diagram. To exit this mode, the Exit Sec ID command

should be executed. Refer to Table 5 for more details.

Product Identification

The Product Identification mode identifies the devices and

manufacturer. For details, see Table 2 for software opera-

tion, Figure 15 for the Software ID Entry and Read timing

diagram and Figure 25 for the Software ID Entry command

sequence flowchart. The addresses A19 and A18 indicate a

bank address. When the addressed bank is switched to

Product Identification mode, it is possible to read another

address from the same bank without issuing a new Soft-

ware ID Entry command.

Note: BK = Bank Address (A19-A18)

Product Identification Mode

Exit/CFI Mode Exit

In order to return to the standard Read mode, the Software

Product Identification mode must be exited. Exit is accom-

plished by issuing the Software ID Exit command

sequence, which returns the device to the Read mode. This

command may also be used to reset the device to the Read

mode after any inadvertent transient condition that appar-

ently causes the device to behave abnormally, e.g., not read

correctly. Please note that the Software ID Exit/CFI Exit

command is ignored during an internal Program or Erase

operation. See Table 5 for the software command code, Fig-

ure 17 for timing waveform and Figure 26 for a flowchart.

TABLE 2: PRODUCT IDENTIFICATION

Address Data

Manufacturer’s ID BK0000H 00BFH

Device ID

SST36VF1601C BK0001H 734BH

SST36VF1602C BK0001H 734AH

T2.0 1249

1249 B1.0

SuperFlash Memory

12 Mbit Bank

I/O Buffers

SuperFlash Memory

4 Mbit Bank

Memory

Address

DQ15/A-1 - DQ0

CE#

WP#

WE#

OE#

Control

Logic

RST#

BYTE#

RY/BY#

Address

Buffers

(8 KWord Sector Protection)

FUNCTIONAL BLOCK DIAGRAM

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 1: SST36VF1601C, 1M X16 DUAL-BANK FLASH MEMORY ORGANIZATION

FFFFFH

F8000H Block 31

F7FFFH

F0000H Block 30

EFFFFH

E8000H Block 29

E7FFFH

E0000H Block 28

DFFFFH

D8000H Block 27

D7FFFH

D0000H Block 26

CFFFFH

C8000H Block 25

C7FFFH

C0000H Block 24

Bank 2

BFFFFH

B8000H Block 23

B7FFFH

B0000H Block 22

AFFFFH

A8000H Block 21

A7FFFH

A0000H Block 20

9FFFFH

98000H Block 19

97FFFH

90000H Block 18

8FFFFH

88000H Block 17

87FFFH

80000H Block 16

7FFFFH

78000H Block 15

77FFFH

70000H Block 14

6FFFFH

68000H Block 13

67FFFH

60000H Block 12

5FFFFH

58000H Block 11

57FFFH

50000H Block 10

4FFFFH

48000H Block 9

47FFFH

40000H Block 8

3FFFFH

38000H Block 7

37FFFH

30000H Block 6

2FFFFH

28000H Block 5

27FFFH

20000H Block 4

1FFFFH

18000H Block 3

17FFFH

10000H Block 2

0FFFFH

08000H Block 1

07FFFH

02000H

01FFFH

00000H

Block 0

Bank 1

Bottom Sector Protection; 32 KWord Blocks; 2 KWord Sectors

8 KWord Sector Protection

(4-2 KWord Sectors)

1249 F01.0

Note: The address input range in x16 mode (BYTE#=VIH) is A19-A0

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 2: SST36VF1601C, 2M X8 DUAL-BANK FLASH MEMORY ORGANIZATION

1FFFFFH

1F0000H Block 31

1EFFFFH

1E0000H Block 30

1DFFFFH

1D0000H Block 29

1CFFFFH

1C0000H Block 28

1BFFFFH

1B0000H Block 27

1AFFFFH

1A0000H Block 26

19FFFFH

190000H Block 25

18FFFFH

180000H Block 24

Bank 2

17FFFFH

170000H Block 23

16FFFFH

160000H Block 22

15FFFFH

150000H Block 21

14FFFFH

140000H Block 20

13FFFFH

130000H Block 19

12FFFFH

120000H Block 18

11FFFFH

110000H Block 17

10FFFFH

100000H Block 16

0FFFFFH

0F0000H Block 15

0EFFFFH

0E0000H Block 14

0DFFFFH

0D0000H Block 13

0CFFFFH

0C0000H Block 12

0BFFFFH

0B0000H Block 11

0AFFFFH

0A0000H Block 10

09FFFFH

090000H Block 9

08FFFFH

080000H Block 8

07FFFFH

070000H Block 7

06FFFFH

060000H Block 6

05FFFFH

050000H Block 5

04FFFFH

040000H Block 4

03FFFFH

030000H Block 3

02FFFFH

020000H Block 2

01FFFFH

010000H Block 1

00FFFFH

004000H

003FFFH

000000H

Block 0

Bank 1

Bottom Sector Protection; 64 KByte Blocks; 4 KByte Sectors

16 KByte Sector Protection

(4-4 KByte Sectors)

1249 F01b.0

Note: The address input range in x8 mode (BYTE#=VIL) is A19-A-1

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 3: SST36VF1602C, 1M X16 DUAL-BANK FLASH MEMORY ORGANIZATION

Top Block Protection; 32 KWord Blocks; 2 KWord Sectors

FFFFFH

FE000H

FDFFFH

F8000H

Block 31

F7FFFH

F0000H Block 30

EFFFFH

E8000H Block 29

E7FFFH

E0000H Block 28

DFFFFH

D8000H Block 27

D7FFFH

D0000H Block 26

CFFFFH

C8000H Block 25

C7FFFH

C0000H Block 24

BFFFFH

B8000H Block 23

B7FFFH

B0000H Block 22

AFFFFH

A8000H Block 21

A7FFFH

A0000H Block 20

9FFFFH

98000H Block 19

97FFFH

90000H Block 18

8FFFFH

88000H Block 17

87FFFH

80000H Block 16

7FFFFH

78000H Block 15

77FFFH

70000H Block 14

6FFFFH

68000H Block 13

67FFFH

60000H Block 12

5FFFFH

58000H Block 11

57FFFH

50000H Block 10

4FFFFH

48000H Block 9

47FFFH

40000H Block 8

Bank 2

3FFFFH

38000H Block 7

37FFFH

30000H Block 6

2FFFFH

28000H Block 5

27FFFH

20000H Block 4

1FFFFH

18000H Block 3

17FFFH

10000H Block 2

0FFFFH

08000H Block 1

07FFFH

00000H Block 0

Bank 1

8 KWord Block Protection

(4 - 2 KWord Sectors)

1249 F02.0

Note: The address input range in x16 mode (BYTE#=VIH) is A19-A0

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 4: SST36VF1602C, 2M X8 DUAL-BANK FLASH MEMORY ORGANIZATION

Top Block Protection; 64 KByte Blocks; 4 KByte Sectors

Block 31

Block 30

Block 29

Block 28

Block 27

Block 26

Block 25

Block 24

Block 23

Block 22

Block 21

Block 20

Block 19

Block 18

Block 17

Block 16

Block 15

Block 14

Block 13

Block 12

Block 11

Block 10

Block 9

Block 8

Bank 2

Block 7

Block 6

Block 5

Block 4

Block 3

Block 2

Block 1

Block 0

Bank 1

16 KByte Block Protection

(4 - 4 KByte Sectors)

1249 F02b.0

1FBFFFH

1F0000H

1FFFFFH

1FC000H

1EFFFFH

1E0000H

1DFFFFH

1D0000H

1CFFFFH

1C0000H

1BFFFFH

1B0000H

1AFFFFH

1A0000H

19FFFFH

190000H

18FFFFH

180000H

17FFFFH

170000H

16FFFFH

160000H

15FFFFH

150000H

14FFFFH

140000H

13FFFFH

130000H

12FFFFH

120000H

11FFFFH

110000H

10FFFFH

100000H

0FFFFFH

0F0000H

0EFFFFH

0E0000H

0DFFFFH

0D0000H

0CFFFFH

0C0000H

0BFFFFH

0B0000H

0AFFFFH

0A0000H

09FFFFH

090000H

08FFFFH

080000H

07FFFFH

070000H

06FFFFH

060000H

05FFFFH

050000H

04FFFFH

040000H

03FFFFH

030000H

02FFFFH

020000H

01FFFFH

010000H

00FFFFH

000000H

Note: The address input range in x8 mode (BYTE#=VIL) is A19-A-1

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 5: PIN ASSIGNMENTS FOR 48-BALL TFBGA (6MM X 8MM)

FIGURE 6: PIN ASSIGNMENTS FOR 48-LEAD TSOP (12MM X 20MM)

A13

WE#

RY/BY#

A12

RST#

WP#

A17

A14

A10

A18

A15

A11

A19

A16

DQ7

DQ5

DQ2

DQ0

BYTE#

DQ14

DQ12

DQ10

DQ8

CE#

NOTE*

DQ13

VDD

DQ11

DQ9

OE#

VSS

DQ6

DQ4

DQ3

DQ1

VSS

1249 48-tfbga P1.0

TOP VIEW (balls facing down)

A B C D E F G H

Note* = DQ15/A-1

1249 48-tsop P2.0

Standard Pinout

Top View

Die Up

A15

A14

A13

A12

A11

A10

A19

WE#

RST#

WP#

RY/BY#

A18

A17

A16

BYTE#

VSS

DQ15/A

-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VDD

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

VSS

CE#

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

TABLE 3: PIN DESCRIPTION

Symbol Name Functions

A19-A0Address Inputs To provide memory addresses. During Sector-Erase and Hardware Sector Protection,

A19-A11 address lines will select the sector. During Block-Erase A19-A15 address

lines will select the block.

DQ14-DQ0Data Input/Output To output data during Read cycles and receive input data during Write cycles

Data is internally latched during a Write cycle. The outputs are in tri-state when

OE# or CE# is high.

DQ15/A-1 Data Input/Output

and LBS Address

DQ15 is used as data I/O pin when in x16 mode (BYTE# = “1”)

A-1 is used as the LSB address pin when in x8 mode (BYTE# = “0”)

CE# Chip Enable To activate the device when CE# is low.

OE# Output Enable To gate the data output buffers

WE# Write Enable To control the Write operations

RST# Hardware Reset To reset and return the device to Read mode

RY/BY# Ready/Busy# To output the status of a Program or Erase operation

RY/BY# is a open drain output, so a 10KΩ - 100KΩ pull-up resistor is required

to allow RY/BY# to transition high indicating the device is ready to read.

WP# Write Protect To protect and unprotect top or bottom 8 KWord (4 outermost sectors) from Erase or

Program operation.

BYTE# Word/Byte Configuration To select 8-bit or 16-bit mode.

VDD Power Supply To provide 2.7-3.6V power supply voltage

VSS Ground

NC No Connection Unconnected pins

T3.2 1249

TABLE 4: OPERATION MODES SELECTION

Mode1

1. RST# = VIH for all described operation modes

CE# OE# WE# DQ7-DQ0

DQ15-DQ8

AddressBYTE# = VIH BYTE# = VIL

Read VIL VIL VIH DOUT DOUT DQ14-DQ8 = High Z AIN

Program VIL VIH VIL DIN DIN DQ15 = A-1 AIN

Erase VIL VIH VIL X2

2. X can be VIL or VIH, but no other value.

X High Z Sector or Block

address,

555H for Chip-Erase

Standby VIH X X High Z High Z High Z X

Write Inhibit X VIL X High Z / DOUT High Z / DOUT High Z X

XXV

IH High Z / DOUT High Z / DOUT High Z X

Product Identification

Software Mode VIL VIL VIH Manufacturer’s ID

(BFH)

Manufacturer’s ID

(00H)

High Z See Table 5

Device ID3

3. Device ID = SST36VF1601C = 734BH,

SST36VF1602C = 734AH

Device ID3High Z

T4.2 1249

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

TABLE 5: SOFTWARE COMMAND SEQUENCE

Command

Sequence

1st Bus

Write Cycle

2nd Bus

Write Cycle

3rd Bus

Write Cycle

4th Bus

Write Cycle

5th Bus

Write Cycle

6th Bus

Write Cycle

Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2

Program 555H AAH 2AAH 55H 555H A0H WA3Data

Sector-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SAX430H

Block-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H BAX450H

Chip-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H

Erase-Suspend XXXXH B0H

Erase-Resume XXXXH 30H

Query Sec ID5555H AAH 2AAH 55H 555H 88H

User Security ID

Program

555H AAH 2AAH 55H 555H A5H SIWA6Data

User Security ID

Program Lock-out7

555H AAH 2AAH 55H 555H 85H XXH 0000H

Software ID Entry8555H AAH 2AAH 55H BKX9

555H

90H

CFI Query Entry 555H AAH 2AAH 55H BKX9

555H

98H

Software ID Exit/

CFI Exit/

Sec ID Exit10,11

555H AAH 2AAH 55H 555H F0H

Software ID Exit/

CFI Exit/

Sec ID Exit10,11

XXH F0H

T5.6 1249

1. Address format A11-A0 (Hex), Addresses A19-A12 can be VIL or VIH, but no other value, for the command sequence when in x16 mode.

When in x8 mode, Addresses A19-A12, Address A-1 and DQ14-DQ8 can be VIL or VIH, but no other value, for the command sequence.

2. DQ15-DQ8 can be VIL or VIH, but no other value, for the command sequence

3. WA = Program word/byte address

4. SAX for Sector-Erase; uses A19-A11 address lines

BAX for Block-Erase; uses A19-A15 address lines

5. For SST36VF1601C,

SST ID is read with A3 = 0 (Address range = 00000H to 00007H),

User ID is read with A3 = 1 (Address range = 00010H to 00017H).

Lock Status is read with A7-A0 = 000FFH. Unlocked: DQ3 = 1 / Locked: DQ3 = 0.

For SST36VF1602C,

SST ID is read with A3 = 0 (Address range = C0000H to C0007H),

User ID is read with A3 = 1 (Address range = C0010H to C0017H).

Lock Status is read with A7-A0 = C00FFH. Unlocked: DQ3 = 1 / Locked: DQ3 = 0.

6. SIWA = User Security ID Program word/byte address

For SST36VF1601C, valid Word-Addresses for User Sec ID are from 00010H-00017H.

For SST36VF1602C, valid Word-Addresses for User Sec ID are from C0010H-C0017H.

All 4 cycles of User Security ID Program and Program Lock-out must be completed before going back to Read-Array mode.

7. The User Security ID Program Lock-out command must be executed in x16 mode (BYTE#=VIH).

8. The device does not remain in Software Product Identification mode if powered down.

9. A19 and A18 = BKX (Bank Address): address of the bank that is switched to Software ID/CFI Mode

With A17-A1 = 0;SST Manufacturer’s ID = 00BFH, is read with A0 = 0

SST36VF1601C Device ID = 734BH, is read with A0 = 1

SST36VF1602C Device ID = 734AH, is read with A0 = 1

10. Both Software ID Exit operations are equivalent

11. If users never lock after programming, User Sec ID can be programmed over the previously unprogrammed bits (data=1) using the

User Sec ID mode again (the programmed “0” bits cannot be reversed to “1”).

For SST36VF1601C, valid Word-Addresses for User Sec ID are from 00010H-00017H.

For SST36VF1602C, valid Word-Addresses for User Sec ID are from C0010H-C0017H.

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

TABLE 6: CFI QUERY IDENTIFICATION STRING1

Address

x16 Mode

Address

x8 Mode Data2Description

10H 20H 0051H Query Unique ASCII string “QRY”

11H 22H 0052H

12H 24H 0059H

13H 26H 0001H Primary OEM command set

14H 28H 0007H

15H 2AH 0000H Address for Primary Extended Table

16H 2CH 0000H

17H 2EH 0000H Alternate OEM command set (00H = none exists)

18H 30H 0000H

19H 32H 0000H Address for Alternate OEM extended Table (00H = none exits)

1AH 34H 0000H

T6.2 1249

1. Refer to CFI publication 100 for more details.

2. In x8 mode, only the lower byte of data is output.

TABLE 7: SYSTEM INTERFACE INFORMATION

Address

x16 Mode

Address

x8 Mode Data1

1. In x8 mode, only the lower byte of data is output.

Description

1BH 36H 0027H VDD Min (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1CH 38H 0036H VDD Max (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1DH 3AH 0000H VPP min (00H = no VPP pin)

1EH 3CH 0000H VPP max (00H = no VPP pin)

1FH 3EH 0004H Typical time out for Program 2N µs (24 = 16 µs)

20H 40H 0000H Typical time out for min size buffer program 2N µs (00H = not supported)

21H 42H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)

22H 44H 0006H Typical time out for Chip-Erase 2N ms (26 = 64 ms)

23H 46H 0001H Maximum time out for Program 2N times typical (21 x 24 = 32 µs)

24H 48H 0000H Maximum time out for buffer program 2N times typical

25H 4AH 0001H Maximum time out for individual Sector-/Block-Erase 2N times typical (21 x 24 = 32 ms)

26H 4CH 0001H Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms)

T7.3 1249

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

TABLE 8: DEVICE GEOMETRY INFORMATION

Address

x16 Mode

Address

x8 Mode Data1Description

27H 4EH 0015H Device size = 2N Bytes (15H = 21; 221 = 2 MByte)

28H 50H 0002H Flash Device Interface description; 0002H = x8/x16 asynchronous interface

29H 52H 0000H

2AH 54H 0000H Maximum number of bytes in multi-byte write = 2N (00H = not supported)

2BH 56H 0000H

2CH 58H 0002H Number of Erase Sector/Block sizes supported by device

2DH 5AH 00FFH Sector Information (y + 1 = Number of sectors; z x 256B = sector size)

2EH 5CH 0003H y = 1023 + 1 = 1024 sectors (03FFH = 1023)

2FH 5EH 0008H

30H 60H 0000H z = 8 x 256 Bytes = 2 KByte/sector (0008H = 8)

31H 62H 001FH Block Information (y + 1 = Number of blocks; z x 256B = block size)

32H 64H 0000H y = 31 + 1 = 32 blocks (001FH = 31)

33H 66H 0000H

34H 68H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)

T8.3 1249

1. In x8 mode, only the lower byte of data is output.

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Output Short Circuit Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

OPERATING RANGE:

Range Ambient Temp VDD

Commercial 0°C to +70°C 2.7-3.6V

Industrial -40°C to +85°C 2.7-3.6V

AC CONDITIONS OF TEST

Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns

Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF

See Figures 21 and 22

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

TABLE 9: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V

Symbol Parameter

Limits

Test ConditionsFreq Min Max Units

IDD1Active VDD Current

Read 5 MHz 15 mA CE#=OE#=VIL, WE#=VIH,

All I/Os open

1 MHz 10 mA

Program and Erase 40 mA CE#=WE#=VIL, OE#=VIH

ISB Standby VDD Current 20 µA CE#, RST#=VDD±0.3V

IALP Auto Low Power VDD Current 20 µA CE#=0.1V, VDD=VDD Max

WE#=VDD-0.1V

Address inputs=0.1V or VDD-0.1V

IRT Reset VDD Current 20 µA RST#=GND

ILI Input Leakage Current 1 µA VIN =GND to VDD, VDD=VDD Max

ILIW Input Leakage Current

on WP# pin and RST# pin

10 µA WP#=GND to VDD, VDD=VDD Max

RST#=GND to VDD, VDD=VDD Max

ILO Output Leakage Current 1 µA VOUT =GND to VDD, VDD=VDD Max

VIL Input Low Voltage 0.8 V VDD=VDD Min

VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max

VIH Input High Voltage 0.7 VDD VV

DD=VDD Max

VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max

VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min

VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min

T9.3 1249

1. Address input = VILT/VIHT, VDD=VDD Max (See Figure 21)

TABLE 10: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol Parameter Minimum Units

TPU-READ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Power-up to Read Operation 100 µs

TPU-WRITE1Power-up to Write Operation 100 µs

T10.0 1249

TABLE 11: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)

Parameter Description Test Condition Maximum

CI/O1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

I/O Pin Capacitance VI/O = 0V 10 pF

CIN1Input Capacitance VIN = 0V 10 pF

T11.0 1249

TABLE 12: RELIABILITY CHARACTERISTICS

Symbol Parameter Minimum Specification Units Test Method

NEND1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Endurance 10,000 Cycles JEDEC Standard A117

TDR1Data Retention 100 Years JEDEC Standard A103

ILTH1Latch Up 100 + IDD mA JEDEC Standard 78

T12.0 1249

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

AC CHARACTERISTICS

TABLE 13: READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V

Symbol Parameter Min Max Units

TRC Read Cycle Time 70 ns

TCE Chip Enable Access Time 70 ns

TAA Address Access Time 70 ns

TOE Output Enable Access Time 35 ns

TCLZ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output 0 ns

TOLZ1OE# Low to Active Output 0 ns

TCHZ1CE# High to High-Z Output 20 ns

TOHZ1OE# High to High-Z Output 20 ns

TOH1Output Hold from Address Change 0 ns

TRP1RST# Pulse Width 500 ns

TRHR1RST# High before Read 50 ns

TRY1,2

2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.

This parameter does not apply to Chip-Erase operations.

RST# Pin Low to Read Mode 20 µs

T13.0 1249

TABLE 14: PROGRAM/ERASE CYCLE TIMING PARAMETERS

Symbol Parameter Min Max Units

TBP Program Time 10 µs

TAS Address Setup Time 0 ns

TAH Address Hold Time 40 ns

TCS WE# and CE# Setup Time 0 ns

TCH WE# and CE# Hold Time 0 ns

TOES OE# High Setup Time 0 ns

TOEH OE# High Hold Time 10 ns

TCP CE# Pulse Width 40 ns

TWP WE# Pulse Width 40 ns

TWPH1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

WE# Pulse Width High 30 ns

TCPH1CE# Pulse Width High 30 ns

TDS Data Setup Time 30 ns

TDH1Data Hold Time 0 ns

TIDA1Software ID Access and Exit Time 150 ns

TSE Sector-Erase 25 ms

TBE Block-Erase 25 ms

TSCE Chip-Erase 50 ms

TES Erase-Suspend Latency 20 µs

TBY1,2

2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.

This parameter does not apply to Chip-Erase operations.

RY/BY# Delay Time 90 ns

TBR1Bus Recovery Time 0 µs

T14.1 1249

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 7: READ CYCLE TIMING DIAGRAM

FIGURE 8: WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM

1249 F04.0

ADDRESSES

DQ15-0

WE#

OE#

CE#

TCE

TRC TAA

TOE

TOLZ

VIH

HIGH-Z

TCLZ TOH

TCHZ

HIGH-Z

DATA VALIDDATA VALID

TOHZ

1249 F05.1

ADDRESSES

DQ15-0

TDH

TWPH

TDS

TWP

TAH

TAS

TCH

TCS

CE#

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

WORD

(ADDR/DATA)

OE#

WE#

TBP

RY/BY#

TBY TBR

Note: X can be VIL or VIH, but no other value.

VALID

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 9: CE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM

FIGURE 10: DATA# POLLING TIMING DIAGRAM

1249 F06.1

ADDRESSES

DQ15-0

TDH

TCPH

TDS

TCP

TAH

TAS

TCH

TCS

WE#

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

WORD

(ADDR/DATA)

OE#

CE#

RY/BY#

TBY TBR

Note: X can be VIL or VIH, but no other value.

VALID

1249 F07.1

ADDRESS A19-0

DQ7DATA DATA# DATA# DATA

WE#

OE#

CE#

TOEH

TOE

TCE

TOES

RY/BY#

TBY

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 11: TOGGLE BIT TIMING DIAGRAM

FIGURE 12: WE# CONTROLLED CHIP-ERASE TIMING DIAGRAM

1249 F08.0

ADDRESSES

WE#

OE#

CE#

OEH

TWO READ CYCLES

WITH SAME OUTPUTS

VALID DATA

1249 F09.1

ADDRESSES

DQ15-0

WE#

555 2AA 2AA555 555

XX55 XX10XX55XXAA XX80 XXAA

555

OE#

CE#

SIX-BYTE CODE FOR CHIP-ERASE

TSCE

TWP

Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals

are interchageable as long as minimum timings are met. (See Table 14)

X can be VIL or VIH, but no other value.

RY/BY#

TBY

VALID

TBR

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 13: WE# CONTROLLED BLOCK-ERASE TIMING DIAGRAM

FIGURE 14: WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM

1249 F10.1

ADDRESSES

DQ15-0

WE#

555 2AA 2AA555 555

XX55 XX50XX55XXAA XX80 XXAA

BAX

OE#

CE#

SIX-BYTE CODE FOR BLOCK-ERASE

TBE

TWP

Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE#

signals are interchageable as long as minimum timings are met. (See Table 14)

BAX = Block Address

X can be VIL or VIH, but no other value.

RY/BY#

VALID

TBY TBR

1249 F11.1

ADDRESSES

15-0

WE#

555 2AA 2AA555 555

XX55 XX30XX55XXAA XX80 XXAA

OE#

CE#

SIX-BYTE CODE FOR SECTOR-ERASE

Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE#

signals are interchageable as long as minimum timings are met. (See Table 14)

= Sector Address

X can be V

or V

IH,

but no other value.

RY/BY#

VALID

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 15: SOFTWARE ID ENTRY AND READ

FIGURE 16: CFI ENTRY AND READ

1249 F12.1

ADDRESSES

TIDA

DQ15-0

WE#

Device ID = 734BH for SST36VF1601C and 734AH for SST36VF1602C

555 2AA 555 0000 0001

OE#

CE#

THREE-BYTE SEQUENCE FOR

SOFTWARE ID ENTRY

TWP

TWPH TAA

00BF Device ID

XX55

XXAA XX90

Note: X can be VIL or VIH, but no other value.

1249 F13.1

ADDRESSES

TIDA

DQ15-0

WE#

555 2AA 555

OE#

CE#

THREE-BYTE SEQUENCE FOR

CFI QUERY ENTRY

TWP

TWPH TAA

XX55XXAA XX98

Note: X can be VIL or VIH, but no other value.

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 17: SOFTWARE ID EXIT/CFI EXIT

FIGURE 18: SEC ID ENTRY

1249 F14.1

ADDRESSES

DQ15-0

TIDA

TWP

TWPH

WE#

555 2AA 555

THREE-BYTE SEQUENCE FOR

SOFTWARE ID EXIT AND RESET

OE#

CE#

XXAA XX55 XXF0

Note: X can be VIL or VIH, but no other value.

1249 F15.1

ADDRESS A19-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

555 2AA 555

OE#

CE#

THREE-BYTE SEQUENCE FOR

CFI QUERY ENTRY

TWP

TWPH TAA

XX55XXAA XX88

Note: WP# must be held in proper logic state (V

or V

) 1 µs prior to and 1 µs after the command sequence

X can be V

or VIH, but no other value.

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 19: RST# TIMING DIAGRAM (WHEN NO INTERNAL OPERATION IS IN PROGRESS)

FIGURE 20: RST# TIMING DIAGRAM (DURING SECTOR- OR BLOCK-ERASE OPERATION)

1249 F16.0

RY/BY#

RST#

CE#/OE#

TRP

TRHR

1249 F17.0

RY/BY#

CE#

OE#

TRP

TRY

TBR

RST#

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 21: AC INPUT/OUTPUT REFERENCE WAVEFORMS

FIGURE 22: A TEST LOAD EXAMPLE

1249 F18.0

REFERENCE POINTS OUTPUTINPUT VIT

VIHT

VILT

VOT

AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points

for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.

Note: VIT - VINPUT Te s t

VOT - VOUTPUT Tes t

VIHT - VINPUT HIGH Test

VILT - VINPUT LOW Test

1249 F19.0

TO TESTER

TO DUT

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 23: PROGRAM ALGORITHM

1249 F20.2

Start

Load data: XXAAH

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XXA0H

Address: 555H

Load

Address/Data

Wait for end of

Program (T

Data# Polling

bit, or Toggle bit

operation)

Program

Completed

Note: X can be VIL or VIH, but no other value.

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 24: WAIT OPTIONS

1249 F21.1

Wait TBP,

TSCE, TSE

or TBE

Program/Erase

Initiated

Internal Timer Toggle Bit

Ye s

Program/Erase

Completed

Does DQ6

match?

Read same

byte/word

Data# Polling

Program/Erase

Completed

Program/Erase

Completed

Read

byte/word

Is DQ7 =

true data?

Read DQ7

Program/Erase

Initiated

Program/Erase

Initiated

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 25: SOFTWARE PRODUCT ID/CFI/SEC ID ENTRY COMMAND FLOWCHARTS

1249 F22.2

Load data: XXAAH

Address: 555H

Software Product ID Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX90H

Address: 555H

Wait TIDA

Read Software ID

Load data: XXAAH

Address: 555H

CFI Query Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX98H

Address: 555H

Wait TIDA

Read CFI data

Load data: XXAAH

Address: 555H

Sec ID Query Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX88H

Address: 555H

Wait TIDA

Read Sec ID

X can be VIL or VIH, but no other value

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 26: SOFTWARE PRODUCT ID/CFI/SEC ID EXIT COMMAND FLOWCHARTS

1249 F23.1

Load data: XXAAH

Address: 555H

Software ID Exit/CFI Exit/Sec ID Exit

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XXF0H

Address: 555H

Load data: XXF0H

Address: XXH

Return to normal

operation

Wait TIDA

Return to normal

operation

X can be VIL or VIH, but no other value

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

FIGURE 27: ERASE COMMAND SEQUENCE

1249 F24.1

Load data: XXAAH

Address: 555H

Chip-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX10H

Address: 555H

Load data: XXAAH

Address: 555H

Wait TSCE

Chip erased

to FFFFH

Load data: XXAAH

Address: 555H

Sector-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX30H

Address: SAX

Load data: XXAAH

Address: 555H

Wait TSE

Sector erased

to FFFFH

Load data: XXAAH

Address: 555H

Block-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX50H

Address: BAX

Load data: XXAAH

Address: 555H

Wait TBE

Block erased

to FFFFH

Note: X can be VIL or VIH, but no other value.

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

PRODUCT ORDERING INFORMATION

Valid combinations for SST36VF1601C

SST36VF1601C-70-4C-B3KE SST36VF1601C-70-4C-EKE

SST36VF1601C-70-4I-B3KE SST36VF1601C-70-4I-EKE

Valid combinations for SST36VF1602C

SST36VF1602C-70-4C-B3KE SST36VF1602C-70-4C-EKE

SST36VF1602C-70-4I-B3KE SST36VF1602C-70-4I-EKE

Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales

representative to confirm availability of valid combinations and to determine availability of new combinations.

Environmental Attribute

E1 = non-Pb

Package Modifier

K = 48 balls or leads

Package Type

B3 = TFBGA (6mm x 8mm)

E =TSOP (type 1, die up, 12mm x 20mm)

Temperature Range

C = Commercial = 0°C to +70°C

I = Industrial = -40°C to +85°C

Minimum Endurance

4 = 10,000 cycles

Read Access Speed

70 = 70 ns

Bank Split

1 = 12 Mbit + 4 Mbit

2 = 4 Mbit + 12 Mbit

Device Density

160 = 1Mbit x16 or

2Mbit x8

Voltage

V = 2.7-3.6V

Product Series

36 = Dual-Bank Flash Memory

1. Environmental suffix “E” denotes non-Pb solder.

SST non-Pb solder devices are “RoHS Compliant”.

SST 36 VF 1601C - 70 - 4C - B3K E

XX XX XXXXX - XXX -XX-XXX X

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

PACKAGING DIAGRAMS

48-BALL THIN-PROFILE, FINE-PITCH BALL GRID ARRAY (TFBGA) 6MM X 8MM

SST PACKAGE CODE: B3K

A1 CORNER

H G F E D C B A

A B C D E F G H

BOTTOM VIEWTOP VIEW

SIDE VIEW

SEATING PLANE

0.35 ± 0.05

1.10 ± 0.10

0.12

6.00 ± 0.20

0.45 ± 0.05

(48X)

A1 CORNER

8.00 ± 0.20

0.80

4.00

0.80

5.60

48-tfbga-B3K-6x8-450mic-4

Note: 1. Complies with JEDEC Publication 95, MO-210, variant 'AB-1', although some dimensions may be more stringent.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.12 mm

4. Ball opening size is 0.38 mm (± 0.05 mm)

1mm

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

48-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 12MM X 20MM

SST PACKAGE CODE: EK

1.05

0.95

0.70

0.50

18.50

18.30

20.20

19.80

0.70

0.50

12.20

11.80

0.27

0.17

0.15

0.05

48-tsop-EK-8

Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions,

although some dimensions may be more stringent.

2. All linear dimensions are in millimeters (max/min).

3. Coplanarity: 0.1 mm

4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.

1.20

max.

1mm

0˚- 5˚

DETAIL

Pin # 1 Identifier

0.50

BSC

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EOL Data Sheet

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

TABLE 15: REVISION HISTORY

Number Description Date

00 •Initial release of data sheet Oct 2003

01 •2004 Data Book

•Updated B3K package diagram

•Added MPNs for EK package

Dec 2003

02 •Clarified Chip-Erase Operation on page 3

•Added x8 Mode address maps in Figure 2 and Figure 4

•Added footnote for RST# to Table 4

•Changes to Table 5 on page 12

– Corrected Word/Byte Program command name

– Updated footnotes 1, 5, 6, and 11 for x8 Mode and updated Sec Id Address

– Added footnote 7 for the User Security ID Program Lock-out command

•Added x8 Mode addresses in CFI Tables 6, 7, and 8 and a footnote

•Corrected x8/x16 CFI value in Table 8 on page 14

•Changes to Table 9 on page 16

– Added the ILIW parameter

– Corrected the Test Conditions for IRT from RST#=VSS±0.3V to RST#=GND

– Corrected the Address input from VIL/VIH to VILT/VIHT and added a figure reference

Feb 2004

03 •Removed Chip-Erase from the “Concurrent Read/Write Operation” table footnote

•Corrected the address lines for Sector-Erase from A19-A10 to A19-A11 in Table 3 and

Table 5

•Updated software command sequence addresses in Table 5 on page 12, timing dia-

grams, and flowcharts

•Changed references to Word-Program and Byte-Program to Program

•Clarified Surface Mount Temperatures in “Absolute Maximum Stress Ratings” on

page 15

Aug 2004

04 •Changed title of data sheet from “Concurrent SuperFlash” to “Dual-Bank Flash”

•Removed references to concurrent bank operations

•Removed the section, “Concurrent Read/Write Operation” from page 2

•Updated sector information in Table 8, “Device Geometry Information” on page 14

Nov 2004

05 •Reverted Table 8, “Device Geometry Information” on page 14 to revision 03 (T8.3 1249) Dec 2004

06 •Added statement that non-Pb devices are RoHS compliant to Features section

•Updated Surface Mount Solder Reflow Temperature information

•Removed leaded part numbers

•Migrated document to a Data Sheet

Jan 2006

07 •End of Life all valid combinations in this data sheet. Replacement part SST36VF160xE Feb 2008

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036

www.SuperFlash.com or www.sst.com

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