DMN2027UPS-13 - DIODES INC - Product.Network

DMN2027UPS

Document number: DS37940 Rev. 2 - 2

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DMN2027UPS

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS

RDS(ON) Max

ID Max

TC = +25°C

20V

12.5mΩ @ VGS= 4.5V

36A

19mΩ @ VGS= 2.5V

30A

Description

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)), yet maintain superior switching performance, making it

ideal for high-efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

Features and Benefits

 Low RDS(ON) – Ensures On-State Losses Are Minimized

 Small Form Factor Thermally Efficient Package Enables Higher

Density End Products

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: POWERDI®5060-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Weight: 0.097 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN2027UPS-13

POWERDI5060-8

2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Bottom View

T

op View

S

G

D

Pin 1

Top

View

S

D

G

D

S

Internal Schematic

POWERDI is a registered trademark of Diodes Incorporated.

POWERDI5060-8

DMN2027UPS

Document number: DS37940 Rev. 2 - 2

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DMN2027UPS

Marking Information

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

12

V

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

ID

10

8

A

Steady

State

TC = +25°C

TC = +70°C

ID

36

29

A

Continuous Drain Current (Note 6) VGS = 2.5V

Steady

State

TA = +25°C

TA = +70°C

ID

8.2

6.6

A

Steady

State

TC = +25°C

TC = +70°C

ID

30

23

A

Maximum Continuous Body Diode Forward Current (Infinite Heatsink)

IS

60

A

Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)

IDM

60

A

Avalanche Current (Note 7) L = 0.1mH

IAS

6.8

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

2.3

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

1.1

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

112

°C/W

t<10s

58

°C/W

Total Power Dissipation (Note 6)

PD

1.9

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

65

°C/W

t<10s

34

°C/W

Thermal Resistance, Junction to Case

RθJC

5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

S

D

S

G

D

N2027UP

YY

WW

= Manufacturer’s Marking

N2027UP = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 15 = 2015)

WW = Week (01 - 53)

DMN2027UPS

Document number: DS37940 Rev. 2 - 2

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DMN2027UPS

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

20

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

1.0

µA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

nA

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.7

—

1.3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

12.5

mΩ

VGS = 4.5V, ID = 9.4A

—

19

VGS = 2.5V, ID = 8.3A

Diode Forward Voltage

VSD

—

0.7

1.3

V

VGS = 0V, IS = 1.3A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

1091

—

pF

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

163

—

Reverse Transfer Capacitance

Crss

—

148

—

Gate Resistance

Rg

—

1.5

3.2

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 2.5V)

Qg

—

7.0

—

nC

VDS = 10V, ID = 9.4A

Total Gate Charge (VGS = 4.5V)

Qg

—

11.6

—

Gate-Source Charge

Qgs

—

2.5

—

Gate-Drain Charge

Qgd

—

3.5

—

Turn-On Delay Time

tD(ON)

—

6.6

—

nS

VGS = 4.5V, VDS = 10V,

RG = 6Ω , ID = 1A

Turn-On Rise Time

tR

—

8.4

—

Turn-Off Delay Time

tD(OFF)

—

26.6

—

Turn-Off Fall Time

tF

—

12.6

—

Reverse Recovery Time

tRR

—

13.2

—

nS

IF = 12A, di/dt = 500A/µs

Reverse Recovery Charge

QRR

—

7.6

—

nC

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN2027UPS

Document number: DS37940 Rev. 2 - 2

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DMN2027UPS

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

0 0.5 1 1.5 2 2.5 3

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS=1.2V

VGS=1.5V

VGS=2.0V

VGS=2.5V

VGS=3.0V

VGS=3.5V

VGS=4.0V

VGS=4.5V

0

5

10

15

20

25

30

0 0.5 1 1.5 2 2.5

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

VDS= 5V

-55℃

25℃

85℃

125℃

150℃

0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(Ω)

ID, Drain-Source Current (A)

Figure 3. Typical On-Resistance vs Drain Current

and Gate Voltage

VGS=4.5V

VGS=2.5V

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

0 2 4 6 8 10 12

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(Ω)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

ID=8.3A

ID=9.4A

0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

0 2 4 6 8 10 12 14 16 18 20

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(Ω)

ID, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs Drain Current and

Junction Temperature

VGS=4.5V

-55℃

25℃

85℃

125℃

150℃

0

0.5

1

1.5

2

2.5

-50 -25 0 25 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction

Temperature

VGS=4.5V, ID=9.4A

VGS=2.5V, ID=8.3A

DMN2027UPS

Document number: DS37940 Rev. 2 - 2

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DMN2027UPS

0

0.005

0.01

0.015

0.02

0.025

0.03

-50 -25 0 25 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Temperature

VGS=2.5V, ID=8.3A

VGS=4.5V, ID=9.4A

0

0.3

0.6

0.9

1.2

1.5

-50 -25 0 25 50 75 100 125 150

VGS(TH), GATE THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs Junction

Temperature

ID=250µA

ID=1mA

0

5

10

15

20

25

30

0 0.3 0.6 0.9 1.2

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs Current

VGS=0V

TJ=-55℃

TJ=25℃

TJ=85℃

TJ=125℃

TJ=150℃

0.1

1

10

100

1000

10000

0 5 10 15 20

IDSS, LEAKAGE CURRENT (nA)

VDS, Drain-SOURCE VOLTAGE (V)

Figure 10. Typical Drain-Source Leakge Current vs

Voltage

25℃

85℃

125℃

150℃

10

100

1000

10000

100000

0 5 10 15 20

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 11. Typical Junction Capacitance

f=1MHz

Ciss

Coss

Crss

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

0 2 4 6 8 10 12

VGS (V)

Qg (nC)

Figure 12. Gate Charge

VDS=10V, ID=9.4A

DMN2027UPS

Document number: DS37940 Rev. 2 - 2

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DMN2027UPS

0.01

0.1

1

10

100

0.1 1 10 100

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 13. SOA, Safe Operation Area

TJ(Max)=150℃

TA=25℃

VGS=4.5V

Single Pulse

DUT on 1*MRP Board

RDS(ON)

Limited

DC

PW=10s

PW=1s

PW=100ms

PW=10ms

PW=1ms

PW=100µs

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 14 Transient Thermal Resistance

RθJA (t)=r(t) * RθJA

RθJA=112℃/W

Duty Cycle, D=t1 / t2

D=Single Pulse

D=0.005

D=0.01

D=0.02

D=0.05

D=0.1

D=0.3

D=0.5

D=0.7

D=0.9

DMN2027UPS

Document number: DS37940 Rev. 2 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

POWERDI5060-8

Dim

Min

Max

Typ

A

0.90

1.10

1.00

A1

0.00

0.05

—

b

0.33

0.51

0.41

b2

0.200

0.350

0.273

b3

0.40

0.80

0.60

c

0.230

0.330

0.277

D

5.15 BSC

D1

4.70

5.10

4.90

D2

3.70

4.10

3.90

D3

3.90

4.30

4.10

E

6.15 BSC

E1

5.60

6.00

5.80

E2

3.28

3.68

3.48

E3

3.99

4.39

4.19

e

1.27 BSC

G

0.51

0.71

0.61

K

0.51

—

L

0.51

0.71

0.61

L1

0.100

0.200

0.175

M

3.235

4.035

3.635

M1

1.00

1.40

1.21

θ

10°

12°

11°

θ1

6°

8°

7°

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

POWERDI5060-8

Dimensions

Value (in mm)

C

1.270

G

0.660

G1

0.820

X

0.610

X1

4.100

X2

0.755

X3

4.420

X4

5.610

Y

1.270

Y1

0.600

Y2

1.020

Y3

0.295

Y4

1.825

Y5

3.810

Y6

0.180

Y7

6.610

D1

E1

A

L

K

M

L1

D2

G

E2

Detail A

0(4X)

A1

c

e

D

E

1

Detail A

b (8X) e/2

1

01 (4X)

M1

b2 (4X)

b3 (4X)

E3

D3

Y7

X3 Y2

Y5 X1

G1

X

C

Y(4x)

G

X2

Y3

Y4

Y6

X4

Y1

DMN2027UPS

Document number: DS37940 Rev. 2 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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