NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features Rev. V2 Functional Schematic GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 3.5 GHz 28 V Operation 12 dB Gain @ 2.5 GHz 54 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Standard metal ceramic package with bolt down flange RoHS* Compliant RFIN / VG 1 2 RFOUT / VD 3 Flange Description The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT1015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. Built using the SIGANTIC(R) process - a proprietary GaN-on-Silicon technology. Pin Configuration Pin No. Pin Name Function 1 RFIN / VG RF Input / Gate 2 RFOUT / VD RF Output / Drain 3 Flange 1 Ground / Source 1. The Flange must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. Ordering Information * Part Number Package NPT1015B bulk quantity NPT1015B-SMBPPR sample Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 RF Electrical Specifications: TC = 25C, VDS = 28 V, IDQ = 400 mA Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2.5 GHz GSS - 13.5 - dB Saturated Output Power CW, 2.5 GHz PSAT - 47.3 - dBm Drain Efficiency at Saturation CW, 2.5 GHz SAT - 57 - % Power Gain 2.5 GHz, POUT = 45 W GP 10.5 12 - dB Drain Efficiency 2.5 GHz, POUT = 45 W 47 54 - % Ruggedness: Output Mismatch All phase angles VSWR = 15:1, No Device Damage DC Electrical Characteristics: TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - - 16 mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 8 mA Gate Threshold Voltage VDS = 28 V, ID = 16 mA VT -2.3 -1.5 -0.7 V Gate Quiescent Voltage VDS = 28 V, ID = 400 mA VGSQ -2.1 -1.2 -0.5 V On Resistance VDS = 2 V, ID = 120 mA RON - 0.22 - Maximum Drain Current VDS = 7 V pulsed, pulse width 300 s ID,MAX - 9.2 - A 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 Absolute Maximum Ratings2,3,4 Parameter Absolute Maximum Drain Source Voltage, VDS 100 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 32 mA Junction Temperature, TJ +200C Operating Temperature -40C to +85C Storage Temperature -65C to +150C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Operating at nominal conditions with TJ 200C will ensure MTTF > 1 x 106 hours. Thermal Characteristics5 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 28 V, TJ = 180C RJC 2.1 C/W 5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1B devices. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 Load-Pull Performance: VDS = 28 V, IDQ = 400 mA, TC = 25C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Frequency (MHz) ZS () ZL () PSAT (W) GSS (dB) Drain Efficiency @ PSAT (%) 900 1.1 + j0.7 6.3 + j1.8 53.7 22.5 65.1 2200 1.6 - j6.0 5.4 - j0.6 53.2 15.8 64.8 2500 1.5 - j6.7 5.2 - j2.2 50.9 15.0 60.8 3500 2.6 - j15 3.9 - j6.3 42.0 13.9 55.4 Impedance Reference ZS and ZL vs. Frequency ZL ZS Gain vs. Output Power 70 22 60 18 900MHz 2200MHz 2500MHz 3500MHz Drain Efficiency (%) 20 Gain (dB) Drain Efficiency vs. Output Power 24 16 14 12 10 25 4 50 900MHz 2200MHz 2500MHz 3500MHz 40 30 20 10 30 35 40 POUT (dBm) 45 50 0 25 30 35 40 45 POUT (dBm) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 50 NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 Evaluation Board and Recommended Tuning Solution 2.5 GHz Narrowband Circuit VGS VDS C1 1.0 mF C2 0.1 mF C3 0.01 mF C8 1000pF C4 1000 pF R1 15 L1 19.4 nH NPT1015 RFIN C11 2.4 pF C12 2.2 pF C7 0.01 mF C6 0.1 mF C5 1.0 mF C9 10 pF C10 20 pF RFOUT C14 10 pF C15 0.6 pF C13 10 pF Description Bias Sequencing Parts measured on evaluation board (20-mil thick RO4350). Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (28 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 Evaluation Board and Recommended Tuning Solution 2.5 GHz Narrowband Circuit Parts list Reference Value Tolerance Manufacturer Part Number C1, C5 1.0 F 10% AVX 12101C105KAT2A C2, C6 0.1 F 10% Kemet C1206C104K1RACTU C3, C7 0.01 F 10% AVX 1206C103KAT2A C4, C8 1000 pF 10% Kemet C0805C102K1RACTU C9, C14 10 pF 0.1 pF ATC ATC800B100B C10 20 pF 0.1 pF ATC ATC800B200B C11 2.4 pF 0.1 pF ATC ATC600F2R4B C12 2.2 pF 0.1 pF ATC ATC600F2R2B C13 10 pF 0.1 pF ATC ATC600F100B C15 0.6 pF 0.1 pF ATC ATC600F0R6B L1 19.4 nH 5% CoilCraft 0806SQ-19NJL R1 15 1% Panasonic ERJ-2RKF15R0X PCB Rogers RO4350, r = 3.5, 0.020" 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 Typical performance as measured in the 2.5 GHz evaluation board: CW, VDS = 28 V, IDQ = 400 mA (unless noted) Drain Efficiency vs. Output Power over Temperature Gain vs. Output Power over Temperature 15 60 Drain Efficiency (%) Gain (dB) 13 12 11 10 25 +25C -40C +85C 50 14 +25C -40C +85C 30 40 30 20 10 35 40 45 0 25 50 30 35 40 45 POUT (dBm) POUT (dBm) Quiescent VGS vs. Temperature -1.1 -1.2 200mA 400mA 600mA VGSQ (V) -1.3 -1.4 -1.5 -1.6 -50 -25 0 25 50 75 100 o Temperature ( C) 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 50 NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 Typical 2-Tone Performance as measured in the 2.5 GHz evaluation board: 1 MHz Tone Spacing, VDS = 28 V, IDQ = 400 mA, TC = 25C (unless noted) 2-Tone Gain vs. Output Power vs. Quiescent Current 2-Tone IMD3 vs. Output Power vs. Quiescent Current 15.0 -15 200mA -20 400mA -25 600mA 14.0 800mA -30 Gain (dB) IMD (dBc) 14.5 300mA -35 -40 13.5 200mA 13.0 300mA 400mA -45 12.5 -50 0.1 12.0 0.1 600mA 800mA 1 10 100 1 10 POUT (W-PEP) POUT (W-PEP) 2-Tone IMD vs. Output Power -20 -25 IMD (dBc) -30 -35 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -40 -45 -50 -55 0.1 1 10 100 POUT (W-PEP) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 100 NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 Evaluation Board and Recommended Tuning Solution 600 - 1000 MHz Broadband Circuit Parts list Reference Value Tolerance Manufacturer Part Number C1 150 F 20% Nichicon UPW1C151MED C2, C5 0.01 F 10% AVX 1206C103KAT2A C3, C6 0.1 F 10% Kemet C1206C104K1RACTU C4, C7 1.0 F 10% AVX 12101C105KAT2A C8 270 F 20% United Chemi-Con ELXY 630ELL271MK25S C9 56 pF 5% ATC ATC100B560J C10, C12 100 pF 5% ATC ATC100B101J C11 6.8 pF 5% ATC ATC100B6R8J R1, R2 0.33 1% Panasonic ERJ-6RQFR33V R3 10 1% Panasonic ERJ-6ENF10R0V R4, R5 7.5 1% Stackpole RHC2512FT7R50 L1 120 nH 5% Coilcraft 0805CS-121XJB L2 ~50 nH - 16 AWG Cu Wire 5 turn, 0.2"ID PCB Rogers LM6010, r = 10.2, 0.025" 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 Evaluation Board and Recommended Tuning Solution 600 - 1000 MHz Broadband Circuit VG VD C1 150 mF R1 0.33 C2 0.01 mF C8 270 mF R2 0.33 C4 1.0 mF C3 0.1 mF L1 120 nH C5 0.01 mF L2 8.0 nH C9 56 pF C6 0.1 mF C7 1.0 mF R3 10 RFIN RFOUT NPT1015 R4 7.5 C11 6.8 pF C12 100 pF C10 10 pF R5 7.5 Performance vs. Frequency at POUT = 45 dBm Performance vs. Frequency at POUT = PSAT 25 Psat Gain (dB) 15 60 10 50 5 600 700 800 900 30 70 25 60 20 50 15 40 Gain Drain Eff 10 600 40 1,000 700 Frequency (MHz) 900 30 1,000 Small Signal s-parameters vs. Frequency 70 20 40 30 17 Gain 20 Drain Eff 10 35 -5 30 -10 25 -15 20 -20 15 s21 -25 s11 s22 15 25 10 30 35 40 POUT (dBm) 45 0 50 10 500 600 700 800 900 -30 1,000 Frequency (MHz) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support s11, s22 (dB) 18 Drain Efficiency (%) 50 s21 (dB) 60 19 Gain (dB) 800 Frequency (MHz) Performance vs. Output Power (f = 700 MHz) 16 Drain Efficiency (%) 70 PSAT (dBm), Drain Efficiency (%) Drain Eff 20 Gain (dB) 80 Gain NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 AC360B-2 Metal Ceramic Package All dimensions shown as inches [millimeters]. Plating is Ni / Au. 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Rev. V2 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. 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