2N/PN/SST4117A Series
Vishay Siliconix
Document Number: 70239
S-04028—Rev. F, 04-Jun-01 www.vishay.com
7-1
N-Channel JFETs
2N4117A PN4117A SST4117
2N4118A PN4118A SST4118
2N4119A PN4119A SST4119
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
4117 –0.6 to –1.8 –40 70 30
4118 –1 to –3 –40 80 80
4119 –2 to –6 –40 100 200
FEATURES BENEFITS APPLICATIONS
DUltra-Low Leakage: 0.2 pA
DVery Low Current/Voltage Operation
DUltrahigh Input Impedance
DLow Noise
DInsignificant Signal Loss/Error Voltage
with High-Impedance Source
DLow Power Consumption (Battery)
DMaximum Signal Output, Low Noise
DHigh Sensitivity to Low-Level Signals
DHigh-Impedance Transducer
Amplifiers
DSmoke Detector Input
DInfrared Detector Amplifier
DPrecision Test Equipment
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.
The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
G
S
TO-206AF
(TO-72)
D
Top View
2N4117A
2N4118A
2N4119A
C
1
23
4
D
G
Top View
PN4117A
PN4118A
PN4119A
TO-226AA
(TO-92)
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236
For applications information see AN105.
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70239
S-04028—Rev. F, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage –40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature : (2N Prefix) –65 to 175_C. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix) –55 to 150_C. . . . . . . . . . . . .
Operating Junction Temperature :
(2N Prefix) –55 to 175_C. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix) –55 to 150_C. . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipation (case 25_C) :
(2N Prefix)a300 mW. . . . . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)b350 mW. . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4117 4118 4119
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –70 –40 –40 –40 V
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –0.6 –1.8 –1–3–2–6V
Saturation Drain Current IDSS VDS = 10 V, VGS = 0 V 30 90 80 240 200 600 mA
VGS = –20 V
VDS = 0 V –0.2 –1–1–1 pA
VGS = –20 V
VDS = 0 V
TA = 150_C
2N –0.4 –2.5 –2.5 –2.5 nA
Gate Reverse Current IGSS V
GS
= –10 V PN –0.2 –1–1–1
VGS = –10 V
VDS = 0 V SST –0.2 –10 –10 –10 pA
VGS = –10 V
VDS = 0 V
TA = 100_CPN/SST –0.03 –2.5 –2.5 –2.5 nA
Gate Operating CurrentbIGVDG = 15 V, ID = 30 mA–0.2
Drain Cutoff CurrentbID(off) VDS = 10 V, VGS = –8 V 0.2 pA
Gate-Source Forward Voltage bVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductance gfs V
DS
= 10 V, V
GS
= 0 V 70 210 80 250 100 330
m
Common-Source
Output Conductance gos
VDS = 10 V, VGS = 0 V
f = 1 kHz 3 5 10 mS
Common-Source 2N/PN 1.2 3 3 3
Common-Source
Input Capacitance Ciss VDS = 10 V SST 1.2
Common-Source VGS = 0 V
f = 1 MHz 2N/PN 0.3 1.5 1.5 1.5 pF
Common-Source
Reverse Transfer Capacitance Crss f = 1 MHz SST 0.3
Equivalent Input Noise Voltage benVDS = 10 V, VGS = 0 V
f = 1 kHz 15 nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NT
b. This parameter not registered with JEDEC.
2N/PN/SST4117A Series
Vishay Siliconix
Document Number: 70239
S-04028—Rev. F, 04-Jun-01 www.vishay.com
7-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate Leakage Current
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Output Characteristics
1000
0–5–4–3–2–1
800
006 30
gfs
IDSS
TA = 25_C
100 mA
IGSS @ 25_C
100 mA
Output Characteristics
500
400
300
100
0
–0.5 V
–1.0 V
–2.0 V
–1.5 V
VGS = 0 V
15
0–3–5–4–2–1
12
9
6
3
00.01 0.1 1
200
160
120
40
0
5
4
3
2
1
0
rDS @ ID = 10 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
rDS
gos
TA = –55_C
125_C
VDS = 10 V
f = 1 kHz
100
0168420
80
60
20
0
VGS = 0 V
–0.5 V
–0.4 V
–0.3 V
–0.2 V
–0.1 V
VGS(off) – Gate-Source Cutoff Voltage (V)
VDS – Drain-Source Voltage (V)
VDG – Drain-Gate Voltage (V)
ID – Drain Current (mA)VGS(off) – Gate-Source Cutoff Voltage (V)
VDS – Drain-Source Voltage (V)
600
400
200
12 18 24
80
25_C
VGS(off) = –0.7 V VGS(off) = –2.5 V
20040
12 0 16842012
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
300
240
180
120
60
0
10 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
IGSS @ 125_C
VGS(off) = –2.5 V
10 mA
VGS(off) = –2.5 V
IDSS – Saturation Drain Current (µA)
gfs – Forward Transconductance (µS)
rDS(on) – Drain-Source On-Resistance ( Ω )
gos – Output Conductance (µS)
gfs – Forward Transconductance (µS) IG – Gate Leakage
ID – Drain Current (µA)
ID – Drain Current (µA)
TA = 125_C
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
7-4 Document Number: 70239
S-04028—Rev. F, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
300
240
180
60
0
Transconductance vs. Gate-Source VoltageTransfer Characteristics
Transconductance vs. Gate-Source VoltageTransfer Characteristics
Common-Source Input Capacitance
vs. Gate-Source Voltage
Circuit Voltage Gain vs. Drain Current
500
0–4–5–2–1
0
TA = –55_C
125_C
100
0–0.4–0.2 –0.8 –1.0
80
60
20
0
200
160
120
40
0
TA = 125_C
–55_C
TA = –55_C
125_C
VDS = 10 V VDS = 10 V
f = 1 kHz
VDS = 10 V VDS = 10 V
f = 1 kHz
TA = –55_C
125_C
0.1 10.01
100
0
VGS(off) = –0.7 V
–2.5 V
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
2.0
0
f = 1 MHz
VDS = 0 V
10 V
VGS – Gate-Source Voltage (V)
ID – Drain Current (mA)
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
VGS(off) = –0.7 V VGS(off) = –0.7 V
VGS(off) = –2.5 V VGS(off) = –2.5 V
40
80
60
20
40
80
25_C
25_C
–0.6 0 –0.4–0.2 –0.8 –1.0–0.6
–30–4–5–2–1–3
0–16 –20–8–4–12
120
400
300
100
200
1.6
1.2
0.4
0.8
AV+
gfs RL
1)RLgos
25_C
25_C
gfs – Forward Transconductance (µS) gfs – Forward Transconductance (µS)
AV – Voltage Gain
Ciss – Input Capacitance (pF)
ID – Drain Current (µA) ID – Drain Current (µA)
2N/PN/SST4117A Series
Vishay Siliconix
Document Number: 70239
S-04028—Rev. F, 04-Jun-01 www.vishay.com
7-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
2
1
00.01 0.1 1
Equivalent Input Noise Voltage vs. Frequency
ID – Drain Current (mA)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
On-Resistance vs. Drain CurrentOutput Conductance vs. Drain Current
VDS = 10 V
f = 1 kHz
0.5
0–8–20–16–4
0.4
0.3
0.1
0
f = 1 MHz
VDS = 0 V
10 V
10 100 1 k 100 k
10 k
200
0
VDS = 10 V
ID = 10 mA
VGS = 0 V
TA = –55_C
125_C
ID – Drain Current (mA)
VGS – Gate-Source Voltage (V) f – Frequency (Hz)
0.2
160
120
40
80
–12
VGS(off) = –2.5 V
20
00.01 0.1 1
16
12
8
4
VGS(off) = –0.7 V
–2.5 V
TA = 25_C
25_C
en – Noise Voltage nV / Hz
rDS(on) – Drain-Source On-Resistance ( Ω )
gos – Output Conductance (µS) Crss – Reverse Feedback Capacitance (pF)
