Optoelectronic devices GaAs diodes (infrared) | Type Group Fig. Characteristics Spectral curve Nr. (see page 27) , tr If a g and ey at Te at [p= 1A mw mW /sr mA ns ns CQX 18 A 12. 450 0,7..1,4 |- 20 1000 1000 ~3 B 12 150 >11 - 20 1000 1000 ~3 COX 19 13 40 20 40 250 700 830 =3 cay 31 14 80 1 0,25 100 100 100 2 CaY 32 15 10 1 45 100 100 100 2 CQY 33 N A 14 80 2.4 1,2 100 500 600 =3 B 14 g0 3...6 1,2 100 500 600 ~3 Cc [14 80 >5 1,2 100 500 600 =3 CQY 34.N A 16 25 2.4 13 100 500 600 x3 B 16 25 3...6 13 100 500 600 ~3 Cc 16 25 >5 13 100 500 600 ~3 | CQY 35.N A 145 10 2.4 20 100 500 600 ~3 B 15 10 3...6 20 100 500 600 = 3 c 15 10 >5 20 100 500 600 ~3 CQY 36 18a 0 2 0,4 50 500 600 ~3 [Cay 36N 18 80 2 0.4 50 500 600 ~3 4 | CQY 37 19a 25 2 2,2 50 500 600 =3 CQY 37N 19 25 2 2,2 50 500 600 ~3 Cax 46 20 50 15 10 100 400 450 3 CQY 98 24 40 15 20 100 400 450 3 cay 9a | 22 60 15 20 100 1000 1000 3 v194P A | 17 120 4.8 1.6 100 500 600 ~3 | B 17 420 6...12 1,6 100 500 600 3 | Cc 7 120 >10 1,6 100 500 600 ~3 Data book reference: S8A GaAlAs CW Laserdiode Type Fig. a ay Fig. @, at Ip Ig at De To) Ay Ad te at Dy Nr. Nr. kw mW mA cm? sr mW mA nm nm ns mw cax20 [11 50 10 10 >5 <300 |[>200 5 200 820 25 |1 >2 Data book reterence:S8A Fig. 10: Top view: The drawn angles a; and a9 are the projections of the angles of half intensity into the plane of the emitting area, 8.4 26, Fig. 11: Special case A EMITTIERENDE FLACHE >! 1,5 /RRADIANT AREA Fig. 13: Metal base with clear plastic lens covering 28 Sasa K ATHODE CATHODE 6451 EMITTIERENDE FLACHE IRRADIANT AREA tole r 1 \ | yt +A t 2,54 25,1 # {8 T } Ly b -K Ll ea 3,8 51a let Fig. 12: Plastic case rant =~ 10B3 DIN 41868 =~ JEDEC TO 92 PLANFENSTER FLAT WINDOW pu 5,6 win ae = @r ed WG {4 EMITTIERENDE FLACHE ~ ~~ IRRADIANT AREA 6s 410 Fig. 14: ~ 18 C 2 DIN 41876 = JEDEC TO 18