© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1Publication Order Number:
NGTB25N120FLW/D
NGTB25N120FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for UPS
and solar applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
Features
•Low Saturation Voltage using Trench with Field Stop Technology
•Low Switching Loss Reduces System Power Dissipation
•10 ms Short Circuit Capability
•Low Gate Charge
•Soft, Fast Free Wheeling Diode
•These are Pb−Free Devices
Typical Applications
•Solar Inverter
•UPS Inverter
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 1200 V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
50
25
A
Pulsed collector current, Tpulse
limited by TJmax
ICM 200 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
50
25
A
Diode pulsed current, Tpulse limited
by TJmax
IFM 200 A
Gate−emitter voltage VGE $20 V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
192
77
W
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
TSC 10 ms
Operating junction temperature
range
TJ−55 to +150 °C
Storage temperature range Tstg −55 to +150 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds(note 3)
TSLD 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−247
CASE 340L
STYLE 4
C
G
25 A, 1200 V
VCEsat = 2.0 V
Eoff = 0.95 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB25N120FLWG TO−247
(Pb−Free)
30 Units / Rail
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A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
25N120FL
AYWWG
G
E
C
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THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.65 °C/W
Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mAV(BR)CES 1200 − − V
Collector−emitter saturation voltage VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VCEsat 1.55
−
2.0
2.2
2.2
−
V
Gate−emitter threshold voltage VGE = VCE, IC = 250 mAVGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
ICES −
−
−
−
0.5
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V IGES − − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Cies −5200 −pF
Output capacitance Coes −144 −
Reverse transfer capacitance Cres −94 −
Gate charge total
VCE = 600 V, IC = 25 A, VGE = 15 V
Qg220 nC
Gate to emitter charge Qge 40
Gate to collector charge Qgc 98
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
td(on) 91 ns
Rise time tr26
Turn−off delay time td(off) 228
Fall time tf160
Turn−on switching loss Eon 1.50 mJ
Turn−off switching loss Eoff 0.95
Total switching loss Ets 2.45
Turn−on delay time
TJ = 125°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
td(on) 88 ns
Rise time tr28
Turn−off delay time td(off) 240
Fall time tf270
Turn−on switching loss Eon 1.8 mJ
Turn−off switching loss Eoff 1.6
Total switching loss Ets 3.4
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinSymbolTest Conditions
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 25 A
VGE = 0 V, IF = 25 A, TJ = 150°C
VF2.2
2.5
2.8 V
Reverse recovery time TJ = 25°C
IF = 25 A, VR = 400 V
diF/dt = 200 A/ms
trr 240 ns
Reverse recovery charge Qrr 1.5 mc
Reverse recovery current Irrm 15 A
Reverse recovery time TJ = 125°C
IF = 25 A, VR = 400 V
diF/dt = 200 A/ms
trr 260 ns
Reverse recovery charge Qrr 2.0 mc
Reverse recovery current Irrm 19 A
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TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
543210
300
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VF
, FORWARD VOLTAGE (V)
1751501251007550250
10
100
1000
10,000
3.02.52.01.51.00.50
0
20
40
60
80
120
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
CAPACITANCE (pF)
IF
, FORWARD CURRENT (A)
VGE = 20 to 15 V
TJ = 25°C
11 V
9 V
8 V
7 V
IC, COLLECTOR CURRENT (A)
TJ = 150°C
IC, COLLECTOR CURRENT (A)
TJ = −40°C
TJ = 25°C
TJ = 150°C
200
100
TJ = 25°C
TJ = 125°C
13 V
7 V
Cies
Coes
Cres
250
200
150
100
50
0
67 8
10 V
11 V
9 V
8 V
7 V
10 V
VGE = 20 to 15 V
300
250
200
150
100
50
0
543210678
13 V
VGE = 20 to 15 V
543210
300
250
200
150
100
50
0
678
13 V
11 V
9 V
8 V
10 V
8401216
200
0
175
150
125
100
75
50
25
3.5 4.0 5.54.5 5.0
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TYPICAL CHARACTERISTICS
Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature
QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C)
150100500
16
Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. IC
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A)
140120100806040200
1
10
100
1000
8
4
Figure 11. Switching Time vs. ICFigure 12. Energy Loss vs. Rg
IC, COLLECTOR CURRENT (A) Rg, GATE RESISTOR (W)
8
1
10
100
1000
756555453525155
5.0
VGE, GATE−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
250
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
VCE = 600 V
160
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
tf
td(off)
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
tf
td(off)
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 150°C
85
200
2.5
0 20 40 60 80 100 120 140 160
Eon
Eoff
td(on)
tr
12 16 20 24 28 32 36 40 44 48 52
Eon
Eoff
td(on)
tr
12 16 20 24 28 32 36 40 44 48 52
Eon
Eoff
2
1.5
1
0.5
0
3.5
3
2.5
2
1.5
1
0.5
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
12
8
4
0300 350
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TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. VCE
Rg, GATE RESISTOR (W)VCE, COLLECTOR−EMITTER VOLTAGE (V)
756555453525155
10
100
1000
10,000
725675625575525475425375
3.5
Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
725675625575525475425375
1
10
100
1000
Figure 17. Reverse Bias Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
85
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 150°C
775
VGE = 15 V
IC = 25 A
Rg = 10 W
TJ = 150°C
775
tf
td(off)
VGE = 15 V
IC = 25 A
Rg = 10 W
TJ = 150°C
tf
td(off)
td(on)
tr
Eon
Eoff
1
td(on)
tr
3
2.5
2
1.5
1
0.5
0
1000100101
0.01
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1000100101
1
10
100
1000
VGE = 15 V, TC = 125°C
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TYPICAL CHARACTERISTICS
Figure 18. IGBT Transient Thermal Impedance
PULSE TIME (sec)
THERMAL RESPONSE (ZqJC)
Figure 19. Diode Transient Thermal Impedance
PULSE TIME (sec)
THERMAL RESPONSE (ZqJC)
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
RqJC = 0.65
Junction Case
C1C2
R1R2Rn
Ci = ti/Ri
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Cn
ti (sec)
1.0E−4
1.76E−4
0.002
0.1
2.0
Ri (°C/W)
0.02659
0.06231
0.10246
0.2121
0.1057
1000100100.10.010.0010.00010.000001
0.001
0.1
1
10
10.00001
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
RqJC = 1.5
0.01
Junction
C1C2
R1R2
Ci = ti/Ri
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Ri (°C/W) ti (sec)
1.48E−4
0.002
0.03
0.19655
0.414
0.5
Case
Cn
Rn
0.1
2.0
0.345
0.0934
Figure 20. Test Circuit for Switching Characteristics
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Figure 21. Definition of Turn On Waveform
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Figure 22. Definition of Turn Off Waveform
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PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
N
P
A
K
W
F
D
G
U
E
0.25 (0.010) MYQS
J
H
C
4
123
−T−
−B−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025) MTBM
−Q−
LDIM MIN MAX MIN MAX
INCHESMILLIMETERS
A20.32 21.08 0.800 8.30
B15.75 16.26 0.620 0.640
C4.70 5.30 0.185 0.209
D1.00 1.40 0.040 0.055
E1.90 2.60 0.075 0.102
F1.65 2.13 0.065 0.084
G5.45 BSC 0.215 BSC
H1.50 2.49 0.059 0.098
J0.40 0.80 0.016 0.031
K19.81 20.83 0.780 0.820
L5.40 6.20 0.212 0.244
N4.32 5.49 0.170 0.216
P--- 4.50 --- 0.177
Q3.55 3.65 0.140 0.144
U6.15 BSC 0.242 BSC
W2.87 3.12 0.113 0.123
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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