MURTA30060 thru MURTA300120R Silicon Super Fast Recovery Diode VRRM = 600 V - 1200 V IF(AV) = 300 A Features * High Surge Capability * Types from 600 V to 1200 V VRRM Heavy Three Tower Package * Isolation Type Package * Electrically Isolated Base Plate * Not ESD Sensitive Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA30060(R) MURTA300120(R) Unit 1200 V Repetitive peak reverse voltage VRRM 600 RMS reverse voltage VRMS 424 --- V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 600 -55 to 150 -55 to 150 1200 -55 to 150 -55 to 150 V C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Symbol Conditions MURTA30060(R) MURTA300120(R) Unit Average forward current (per pkg) IF(AV) TC = 100 C 300 300 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 2750 2750 A Maximum instantaneous forward voltage (per leg) VF IFM = 150 A, Tj = 25 C 1.7 2.6 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 C 25 25 A Tj = 125 C 5 5 mA Maximum reverse recovery time (per leg) Trr IF=0.5 A, IR=1.0 A, IRR= 0.25 A 150 150 ns 0.40 0.40 C/W Parameter Thermal characteristics Maximum thermal resistance, junction case (per leg) RJC www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MURTA30060 thru MURTA300120R MURTA30060(R) Figures: www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MURTA30060 thru MURTA300120R MURTA300120(R) Figures: www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3 MURTA30060 thru MURTA300120R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 4 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: MURTA300120 MURTA300120R MURTA30060 MURTA30060R