N-CHANNEL ENHANCEMENT MOS FET oe PRODUCT CATALOG A@MTOM oencs. nc D00V. 25A. 0.100 | [ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS SDF 250 JAA Drain-source Volt.(1) VOSS 200 Vde Drain-Gate Voltage SDF250 JAB (Res"1.0Ma) (1) VOGR 200 Vde Gate-Source Voltage FEATURES Se nae CanTTRIOT = ~ brain sucnsn ontinuous| 1, 25 Ade @ RUGGED PACKAGE Drain Current Pulsed(3) | 1DM 120 A @ HI-REL CONSTRUCTION Total Power Dissipation | PD 150 W CERAMIC EYELETS Power Dissipation 1.2 Wee @ LEAD BENDING OPTIONS Derating > 25C . @ COPPER CORED 52 ALLOY PINS Operating & Storage Temp. | TJ/Tsig -55 TO +150 C @ LOW IR LOSSES Thermal Resistance Rthde 0.8 C/W @ LOW THERMAL RESISTANCE Max.Lead temperature TL 300 C e ECR LAT MIL-S-19500 SCREENING 7 ELECTRICAL CHARACTERISTICS Te =25c (WISE SPEC TE TED SCHEMATIC PARAMETER [SYMBOL] TEST CONDITIONS [MIN] TYP] MAX UNITS in- VGS=0V ) TERMINAL CONNECTIONS Brain source . |v(aryoss 1D=250 pA 200} - | - | v Gate Threshold _ _ g iTGATE 1] DRAIN Vol tage VGS(TH)]} VDS=VGS 1|D=250 A 2.0} - 14.0] V _ [DRAIN |2{source | |rate course | icss |ves=s20 v | Tio] na (S) [3][source [3| GATE Zero Gate VOS=MAX.RATING vGS=0| - | [250] HA STANDARD BEND |Voltage Drain | IDSS [yps=0.8 MAX.RATING CONF IGURAT IONS JAA Current VGS=0.. -Tds125C - | |tooo] HA Statice Drain- VGS=10 V Source On-State!lRDS(ON > - | - jo.10) Resistance(1) . (ON) ID=16A Forward Trans- vDS 2 SO V Conductance (2)| 9fS | itps=i6a 13 | - | - |S(@) nee Input Capacitance] C|SS . - (2600) - pF S Output Capacitonce| COSS vee Ov WO V - |650| - pF BeyeeTonsarerer| crss | = [150[ = [oF Turn-On Delay |td(on)|ypp=100V RG=6.290 - | - | 30] ns Rise Time tr (nose 7 RD=3.9 0 _ |180| ns Turn-Off Delay|td(off)lare essentially indepen- - - | 100] ns Fall Time if dent of operating temp.) [_ [120] ns D Total Gate Charge (Sate Source Plus| Qg - 55]/ - [115] nc Gate-Sou VDS=0.8'MAX-RATING [> Gate-Source =Q. . (CUSTOM BEND OPTIONS AVAILABLE) Charge Qgs (Gate charge is essenti- 10 | - | 21 4 nc Gate-Drain ally independent of the SON ATA PONS JAB Miller) Qed operating temperature) 30 | - 60 | nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc=25C (jMLESS_OTHERS PARAMETER SYMBOL} TEST .CONDITIONS MIN | TYP [MAX . |UNITS Continuous Modified MOSFET Source Current| 1S - |- |251 A > symbol showing the (Body Diode) integral reverse Pulse Source -JP-N junction recti- Gurgest (Body ISM |fier (See schematic)| - | ~ |100] A Diode Forward IF=25A, VGS=OV _ - Voltage (2) VSD Tc=+25C 2.0) V Reverse = _ 23 Recovery Time tre |To=#25 C [850] ns 1 IF=25A Reverse Re- (CUSTOM BEND OPTIONS AVAILABLE) covery Charge | OFh |ei/dt=100A/ HS eA I REV. 10/93 3 TJ = 25C to 150C. 2) Pulse test: Pulse Width <300sS, Duty Cycle <22%. 3) Repetitive Rating: Pulse Width limited By Max.junction Temperature. A12