© 2008 IXYS CORPORATION, All rights reserved DS99448F(04/08)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.5 V
IGSS VGS = ±30V, VDS = 0V ±100 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 6A, Note 1 500 mΩ
PolarTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXTP12N50PM
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1 MΩ 500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C 6 A
IDM TC= 25°C, pulse width limited by TJM 30 A
IATC= 25°C 12 A
EAS TC= 25°C 600 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ =150°C 10 V/ns
PDTC= 25°C 50 W
TJ - 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 2.5 g
G = Gate D = Drain
S = Source
Features
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
OVERMOLDED TO-220
(IXTP...M) OUTLINE
GDS
Isolated Tab
VDSS = 500V
ID25 = 6A
RDS(on) ≤≤
≤≤
≤ 500mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 300ns
IXTP12N50PM
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10V, ID = 6A, Note 1 7.5 13 S
Ciss 1830 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 182 pF
Crss 16 pF
td(on) 22 ns
trVGS = 10V, VDS = 0.5 VDSS, ID = 6A 27 ns
td(off) RG = 10Ω (External) 65 ns
tf 20 ns
Qg(on) 29 nC
Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 6A 11 nC
Qgd 10 nC
RthJC 2.5 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 12 A
ISM Repetitive, pulse width limited by TJM 48 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 2.8 μC
IRM 18.2 A
Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
123
ISOLATED TO-220 (IXTP...M)
IF = 6A, -di/dt = 150A/μs,
VR = 100V, VGS = 0V
© 2008 IXYS CORPORATION, All rights reserved
IXTP12N50PM
Fig. 2. Extended O u tp u t Ch ar acter istics
@ 25
º
C
0
3
6
9
12
15
18
21
24
27
30
0 3 6 9 12 15 18 21 24 27 30
V
D S
- V o l ts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
F ig . 3. O u tp u t Ch ar acter istics
@ 125
º
C
0
2
4
6
8
10
12
024681012
V
D S
- V ol ts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig . 1. Output Cha racte ristics
@ 25
º
C
0
2
4
6
8
10
12
01234567
V
D S
- V ol ts
I
D
- Amp eres
V
GS
= 10V
6V
7V
Fig. 4. R
DS(on
)
Normalized to I
D
= 6A Value
vs. Junction Te m pe rature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degree s Cent igr ade
R
D S ( o n )
- Norm alized
I
D
= 12A
I
D
= 6A
V
GS
=
10V
Fig . 5. R
DS(on)
Normalized to I
D
= 6A Value
vs. Drai n Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 3 6 9 12 15 18 21 24 27 30
I
D
- A mp eres
R
D S ( o n )
- Nor malized
T
J
= 125ºC
T
J
= 25ºC
V
GS
=
10V
Fig. 6. Drain Current vs. Case
Temperature
0
1
2
3
4
5
6
7
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Ampe res
IXTP12N50PM
IXYS reserves the right to change limits, test conditions, and dimensions.
Fi g. 11. Ca paci ta nce
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- V ol ts
C apacitance - picoFarads
C
iss
C
oss
C
rss
f
=
1M Hz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
036912151821242730
Q
G
- nanoCoul om bs
V
G S
- Vo lts
V
DS
= 250V
I
D
= 6A
I
G
= 10mA
Fig. 7. I nput Admitta nce
0
2
4
6
8
10
12
14
16
18
20
4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
G S
- V ol ts
I
D
- Ampe re s
T
J
= 125ºC
25ºC
- 40ºC
Fig . 8. Tra nsconductan ce
0
3
6
9
12
15
18
21
24
27
02468101214161820
I
D
- A mp ere s
g
f s
- Siemen s
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. S ource Current vs. S ource -To-Drai n
Voltage
0
5
10
15
20
25
30
35
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
S D
- V ol ts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g. 12. Forwa rd-Bi as
Safe Operating Area
0.1
1
10
100
10 100 1000
VD S - V o l ts
I D - Amp e res
100µs
1ms
DCT
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limi
t
10ms
25µs
© 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_12N50P(4J)4-14-08-D
IXTP12N50PM
Fig. 13. Maximum Transient Thermal Imped ance
0.01
0.10
1.00
10.00
0.00001 0.0001 0.001 0.01 0.1 1 10
P ul se Wi dth - S econds
Z
( t h ) J C -
º
C / W
