Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 25V
▼ Fast Switching Characteristic RDS(ON) 8.5mΩ
▼ Low On-resistance ID14A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient3Max. 50 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Continuous Drain Current311
Pulsed Drain Current150
Gate-Source Voltage ±16
Continuous Drain Current314
Parameter Rating
Drain-Source Voltage 25
200711061-1/4
AP4880GEM
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,ruggedized
device design, ultra low on-resistance and cost-effectiveness.
SSSG
DDDD
SO-8
S
G
D
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 25 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=14A - - 8.5 mΩ
VGS=4.5V, ID=10A - - 15 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=14A - 13.5 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±16V - - ±30 uA
QgTotal Gate Charge2ID=14A - 23 37 nC
Qgs Gate-Source Charge VDS=20V - 3.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 17 - nC
td(on) Turn-on Delay Time2VDS=15V - 11 - ns
trRise Time ID=1A - 11 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 36 - ns
tfFall Time RD=15Ω-25-ns
Ciss Input Capacitance VGS=0V - 900 1440 pF
Coss Output Capacitance VDS=25V - 490 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 195 - pF
RgGate Resistance f=1.0MHz - 2 3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=14A, VGS=0V, - 45 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 42 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4
AP4880GEM
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
AP4880GEM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. On-Resistance vs.
Reverse Diode Drain Current
3/4
0
10
20
30
40
50
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC 10V
7.0V
5.0V
4.5V
VG= 4 .0V
0
10
20
30
40
50
0246
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
10V
7.0V
5.0V
4.5V
VG= 4 .0V
TA= 150 oC
0
10
20
30
40
50
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=10A
TA=25 oC
0.6
1.0
1.4
1.8
25 50 75 100 125 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=14A
VG=10V
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25 oCT j=150 oC
0.0
4.0
8.0
12.0
16.0
20.0
0 1020304050
ID , Drain Current (A)
RDS(ON) (mΩ)
VGS =10V
VGS =4.5V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4/4
AP4880GEM
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM tT
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃/W
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25 oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
14
0 1020304050
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
I
D=14A
VDS =12V
V DS =16V
V DS =20V
10
100
1000
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
0
20
40
60
80
0246
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150 oCT j=25 oC
VDS =5V
