MITSUBISHI Nch POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE FK16VS-5 OUTLINE DRAWING Dimensions in mm 4 TOSMAX 45 < ' : = : 1.3 No = a \ {218 $9 S,2) 2 9 +23 =i gle *~ 3 ne _ t oY pave =e 5 os ale 08 oe a) ne - . a + CD (2) OF oO H | Ona al 4 W) GATE i @ DRAIN @VDSS cece ccc ence teeter nent erent etna 250V 3 3) SOURCE :4) DRAIN eros (ON) (MAX) eee ne eee eee rere ete enee 0.31 QO FE WYO ccc recente ence eter eee en tenses 16A 4 3 Integrated Fast Recovery Diode (MAX.) --+- 150ns TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS (Te = 25C) Symbol Pararneter Conditions Ratings Unit Vpss Drain-source voltage Vas = 0V 250 Vv Vass Gate-source voltage Vos = OV +30 Vv fo Drain current 16 A DM Drain current (Pulsed) 48 A Is Source current 16 A ISM Source current (Pulsed) 48 A PD Maximum power dissipation 125 Ww Tech Channel temperature 55 ~ +150 C Tstg Storage temperature -55 ~ +150 C _ Weight Typical value 1.2 g 3-7 ate MITSUBISHI ELECTRICMITSUBISHI Nch POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tech = 25C) ELECTRIC Limits Symbol Parameter Test conditions - m Unit Min. Typ. Max V BR) Oss | Drain-source breakdown voltage | lp = 1mA, Vas = OV 250 _ _ Vv V 18h) ass | Gate-source breakdown voltage | IG = +100uA, VDS = OV +30 _ _ Vv lass Gate leakage current Vas = +25V, Vos = 0V _ _ +10 BA loss Drain current Vos = 250V, Vas = 0V - = 1 mA VGS (th) Gate-source threshold voltage ID = IMA, Vos = 10V 2 3 4 Vv (DS(ON) | Drain-source on-state resistance | ID = 8A, VGS = 10V _ 0.24 0.31 Q Vos (ON) | Drain-source on-state voltage | ip = 8A, VGS = 10V _ 1.92 2.48 v | yts | Forward transfer admittance _| Ip = 8A, VDS = 10V 6.5 10.0 = s Ciss Input capacitance 1050 _ pF Coss Output capacitance Vs = 25V, VGS = OV, f = 1MHz _ 220 _ pF Crsg Reverse transfer capacitance 45 _ pF td (on) Turn-on defay time _ 20 _ ns t Rise time 40 _ ns : VoD = 150V, ID = 8A, Vas = 10V, RGEN = Ras = 500 td (off) Turn-off delay tire 110 _ ns tt Fail time _ 50 _ ns Vsb Source-drain voltage Is = BA, Vas = OV _ 15 2.0 v Rin (ch-c)__| Thermal resistance Channel to case _ _ 1.00 CAN ter Reverse recovery time Is = 16A, dis/dt = -100A/us _ _ 150 ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 102 5 = = 3 a a 2 ~ 491 SQ 120 BO? on Ww 5 < oc a Fa 3 Q 80 3 a z 100 f g 4 a Tc = 25C 2 3E Si Pulse a 2 5 50 100 150 200 40023 5710 23 6710223 57103 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) 3-8 MITSUBISHIOUTPUT CHARACTERISTICS (TYPICAL) MITSUBISHI Nch POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) Ves=20V 50 20 10V Tos 26C PO = ON oem pn mm Ise T ~ se _ er c= 25C =< 40 x 16 Pulse Test 2 2 5B 30 5 2 lu uh lea c cc cc 3B 20 5 8 Zz Zz = Qa 10 Oo 4 0 0 0 10 20 30 40 50 6 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) 0.5 hue Te = 25C Te = 25C Ww ait Pulse Test we Pulse Test VGS = 10V <5 Ba 04 r 1 rs Os 26 zs ' ZS Oe Oo 03 tw 2 tu o> Ow im oO SW D> og BE 02 = Ot Za 22 < < > ew 0.1 & Be 0 0 = 0 4 8 12 16 20 1077 23 567100 23 5710123 57102 GATE-SOURCE VOLTAGE Vas (V} DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TAANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 10) To = 25C 7 To = 25C VDS = B0V 5 = Pulse Test cg = uu <> a Lo 3 B 2 z 2 Lid te FO 100 a az > oa 7 o a z SE 5 3 53 z ie 3 2 Vos = 10V : Pulse T a) 4 8 12 16 20 10" og 23 5 7103 23 5 7 102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Io (A) MITSUBISHI 3-9 ELECTRICMITSUBISHI Nch POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 7 ch = 25C Vop = 150V 5 VGS = 10V N= RGS = 25Q 2 102 sl 10! CAPACITANCE Ciss, Coss, Crss (pF) ww an SWITCHING TIME (ns) Nw 7 5 3 Tch = 25C 2p f= 7MHz = OV 10 23 5710923 5710'23 5710223 10 23 5710 23 = 5 7 102 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN CURRENT Ip (A) GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE VS.GATE CHARGE FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL) 20 7 i Teh = 25C ID = 16A Ves = OV Pulse Test 16 VDS = byt 75C 12 4 SOURCE CURRENT Is (A) GATE-SOURCE VOLTAGE Vas (V) 0 0 20 49 60 80 106 0 0.8 1.6 2.4 3.2 40 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE Vsp (V) ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE CHANNEL TEMPERATURE (TYPICAL) (TYPICAL) Vos = 10V lp = 1mA GATE-SOURCE THRESHOLD VOLTAGE Vs thy (V) Nw oN 9 or 50 100 150 200 = 250 ~50 0 50 100 150 DRAIN-SOURCE ON-STATE RESISTANCE 108 (On) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rps (on) (25C) CHANNEL TEMPERATURE Tech (C) CHANNEL TEMPERATURE Tch (C) 3-10 MITSUBISHI ELECTRICDRAIN-SOURCE BREAKDOWN VOLTAGE V (8A) oss (1C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (Br) ss (25C) tre (4S) REVERSE RECOVERY TIME BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = OV ip = 1mA 1.2 1.0 08 0.6 0.4 -50 0 50 100 = 150 CHANNEL TEMPERATURE Tch (C) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 108 10 <= 7 Is = 16A 7 5 5 Ves=0v JS ~ 3 VoD = 180V43 & 2 2 uu 102 10 7 72 ; : 2 2 8 101 1008 7 7 5 5 us 3 T= 25C ]3 & ---Tor= 150C |[* & 10 joe 10 #223 =#45710 23 6710 SOURCE CURRENT dis/dt (A/us) MITSUBISHI Nch POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) _ 103 102 g 7 didt = -100A/us-| 7 =z z 5 Ves = QV 5 ke ~ Voo = 150V Z LL 3 3 3 is e 2 2 > > 5 x > Ww 402 108 o o tu 3 7 7 3 5 5 2 Oo 3 306 oc a y 4 Ten= 25C [2 ma = Ton = 150C > 10! 1000 100 23 57107 22 #5 7102 x SOURCE CURRENT Is (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS nw onS ww oS QO 7 0. 0.1 9 NG Gis) Pulse = N 0-2 . 10423 5710323 5710223 571023 57108 23 5710! 23 57%0 PULSE WIDTH | tw (s) TRANSIENT THERMAL IMPEDANCE = 2th (ch-c) (C/W) MITSUBISHI ELECTRIC 3-11