For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC382LP3 / 382LP3E
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
v01.0610
General Description
Features
Functional Diagram
The HMC382LP3 & HMC382LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Ampli ers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This LNA
has been optimized to provide 1.0 dB noise gure, 17
dB gain and +30 dBm output IP3 from a single supply
of +5V. The HMC382LP3 & HMC382LP3E feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise gure, please see the HMC618LP3(E).
Noise Figure: 1 dB
Output IP3: +30 dBm
Gain: 17 dB
Externally Adjustable Supply Current
Single Positive Supply: +5V
50 Ohm Matched Input/Output
Electrical Speci cations, TA = +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms*
Typical Applications
The HMC382LP3 / HMC382LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• GSM/GPRS & EDGE
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 1.7 - 1.9 1.9 - 2.0 2.0 - 2.1 2.1 - 2.2 GHz
Gain 14 17 12 15 11 14 9 12 dB
Gain Variation Over Temperature 0.01 0.015 0.01 0.015 0.01 0.015 0.01 0.015 dB/°C
Noise Figure 1.0 1.3 1.05 1.35 1.15 1.45 1.2 1.5 dB
Input Return Loss 13 12 11 10 dB
Output Return Loss 10 13 12 9 dB
Reverse Isolation 37 36 35 35 dB
Output Power for
1dB Compression (P1dB) 16 16 15.5 14 dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
29.5 30 30 29.5 dBm
Supply Current (Idd1 + Idd2) 67 67 67 67 mA
* Rbias resistor value sets current. See application circuit herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Broadband Gain & Return Loss
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
Gain vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
25
0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
HMC382LP3 / 382LP3E
v01.0610
Reverse Isolation vs. Temperature
Output Return Loss vs. Temperature
-15
-12
-9
-6
-3
0
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-50
-45
-40
-35
-30
-25
-20
-15
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
0
0.4
0.8
1.2
1.6
2
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
8
12
16
20
24
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
Typical Supply Current vs. Vdd1 & Vdd2
Vdd (Vdc) Idd (mA)
+4.5 67.2
+5.0 67.4
+5.5 67.6
Drain Bias Voltage (Vdd1, Vdd2) +8.0 Vdc
RF Input Power (RFIN)(Vs = +5.0 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 6.94 mW/°C above 85 °C) 0.451 W
Thermal Resistance
(channel to ground paddle) 144 °C/ W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC382LP3 / 382LP3E
v01.0610
Recommended Bias Resistor Values
for Various Idd1 & Idd2
Idd1 + Idd2 (mA) Rbias (Ohms)
60 27
70 16
80 13
100 8.2
120 3.9
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Gain, Noise Figure & P1dB vs.
Supply Current @ 1900 MHz
12
14
16
18
20
22
24
0.2
0.4
0.6
0.8
1
1.2
1.4
60 70 80 90 100 110 120
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY CURRENT (mA)
P1dB vs. Temperature @ Idd = 67 mA
Output IP3 vs. Temperature Idd = @ 67 mA
Psat vs. Temperature @ Idd = 67 mA
10
12
14
16
18
20
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC382LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 382
XXXX
HMC382LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 382
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
HMC382LP3 / 382LP3E
v01.0610 GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
Pin Number Function Description Interface Schematic
1, 4, 5, 7, 9,
12, 14, 16 N/C No connection necessary. These pins may be connected to
RF/DC ground. Performance will not be affected.
2 RFIN This pin is AC coupled and matched to 50 Ohms.
3, 6, 10 GND These pins and package bottom must
be connected to RF/DC ground.
8Res
This pin is used to set the DC current of the ampli er
by selection of external bias resistor.
See application circuit.
11 RFOUT This pin is AC coupled and matched to 50 Ohms.
13,15 Vdd2, Vdd1 Power supply voltage. Choke inductor and bypass
capacitors are required. See application circuit.
Pin Descriptions
Application Circuit
Note: L1, L2 and C1 should be located as close to pins as possible.
HMC382LP3 / 382LP3E
v01.0610 GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 - J5 DC Pin
C1 10 pF Capacitor, 0402 Pkg.
C2, C3 1000 pF Capacitor, 0603 Pkg.
C4, C5 15000 pF Capacitor, 0603 Pkg.
L1 56nH Inductor, 0603 Pkg.
L2 18nH Inductor, 0603 Pkg.
R1 Resistor, 0402 Pkg.
U1 HMC382LP3 / HMC382LP3E Ampli er
PCB [2] 112580 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed ground paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
List of Materials for Evaluation PCB 112582 [1]
HMC382LP3 / 382LP3E
v01.0610 GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
