1
FCA50CC50
MOSFET MODULE
UL;E76102 M
1
Unit
A
Maximum Ratings Tj 25
Electrical Charactistics Tj 25
Symbol Item Conditions Ratings
FCA50CC50 Unit
VDSS Drain-Source Voltage 500 V
VGSS Gate-Source Voltage 20 V
IDDrain
Current
DC
Pulse
Duty 55% 50 A
IDP 100
Is Source Current 50 A
PTTotal Power Dissipation Tc 25 330 W
Tj Channel Temperature 40 150
Tstg Storage Temperature 40 125
VISO Isolation Voltage R.M.S. A.C. 1minute 2500 V
Mounting
Torque
Mounting M6
Terminal M5
Recommended Value 2.5 3.9 25 40 4.7 48 N m
kgf B
Recommended Value 1.5 2.5 15 25 2.7 28
Mass Typical Value 240 g
Symbol Item Conditions Ratings
Min. Typ. Max.
1.0
Unit
IGSS Gate Leakage Current VGS 20V VDS 0V A
1.0IDSS
Zero Gate Voltage Drain Current
VGS 0V VDS 500V mA
500VBR DSS
Darin-Source Breakdown Voltage
VGS 0V ID1mA V
1.0 5.0VGS th
Gate-Source Threshold Voltage
VDS VGS ID10mA V
140RDS on
Drain-Source On-State Resistance
ID25A VGS 15V m
3.5VDS on
Drain-Source On-State Voltage
ID25A VGS 15V V
30gfs Forward Transconductance VDS 10V ID25A S
10000Ciss Input Capacitance VGS 0V VDS 25V f1.0MHz pF
1900Coss Output Capacitance VGS 0V VDS 25V f1.0MHz pF
750Crss
Reverse Transfer Capacitance
VGS 0V VDS 25V f1.0MHz pF
60
tr Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
VDD 300V VGS 15V
ID25A RG5ns
60
td on
650
tf 130
td off
2.0VSDS Diode Forward Voltage IS25A VGS 0V V
80 100trr Reverse Recovery Time IS25A VGS 5V di/dt 100A/sns
0.38
1.67
Rth j-c Thermal Resistance MOSFET
Diode /W
FCA50CC50 is a dual power MOSFET module designed for fast swiching applications
of high voltage and current. 2 devices are serial connected. The mounting base of the
module is electrically isolated from semiconductor elements for simple heatsink
construction.
ID50A, VDSS 500V
Suitable for high speed switching applications.
Low ON resistance.
Wide Safe Operating Areas.
trr 100ns
Applications
UPS CVCF , Motor Control, Switching Power Supply, etc.
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2
FCA50CC50
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3
FCA50CC50
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