APTGT50X120RTP3
APTGT50X120BTP3 – Rev 0, September 2003
APT website – http://www.advancedpower.com
IGBT & Diode Brake
(only for APTGT50X120BTP3)
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 55
I
C
Continuous Collector Current T
C
= 80°C 35
I
CM
Pulsed Collector Current T
C
= 25°C 80
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 200 W
I
F
DC Forward Current T
C
= 80°C 15 A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 75
I
C
Continuous Collector Current T
C
= 80°C 50
I
CM
Pulsed Collector Current T
C
= 25°C 100
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 270 W
RBSOA Reverse Bias Save Operating Area T
j
= 125°C 100A @ 1100V
I
F
DC Forward Current T
C
= 80°C 50
I
FRM
Repetitive Peak Forward Current t
p
= 1ms 100 A
2. Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
I
R
Reverse Current V
R
= 1600V T
j
= 150°C
3 mA
V
F
Forward Voltage I
F
= 50A T
j
= 150°C 1.0 V
R
thJC
Junction to Case 0.65 °C/W
IGBT Brake & Diode
(only for APTGT50X120BTP3)
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 1200V
4 mA
T
j
= 25°C 1.8 2.2
V
CE(on)
Collector Emitter on Voltage V
GE
= 15V
I
C
= 35A T
j
= 125°C 2.2 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 1.5mA 5.0 5.8 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 500 nA
C
ies
Input Capacitance 2530
C
oes
Output Capacitance 132
C
res
Reverse Transfer Capacitance
V
GE
= 0V,
V
CE
= 25V
f = 1MHz 115
pF
T
j
= 25°C 2.3 2.7
V
F
Forward Voltage V
GE
= 0V
I
F
= 35A T
j
= 125°C 2.5 V
IGBT 0.6
R
thJC
Junction to Case Diode 1.5 °C/W
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