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1/5/06
IRF7853PbF
HEXFET® Power MOSFET
lPrimary Side Switch in Bridge Topology
in Universal Input (36-75Vin) Isolated
DC-DC Converters
lPrimary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
lSecondary Side Synchronous
Rectification Switch for 15Vout
lSuitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
Benefits
Applications
lLow Gate to Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
Notes through are on page 8
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
PD - 97069
VDSS RDS
(
on
)
max ID
100V 18m:@VGS = 10V 8.3A
Absolute Maximum Ratings
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
c
PD @TA = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
dv/dt Peak Diode Recovery dv/dt
h
V/ns
TJ Operating Junction and °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20 °C/W
RθJA Junction-to-Ambient (PCB Mount)
ei
––– 50
2.5
Max.
8.3
6.6
66
100
± 20
5.1
-55 to + 150
0.02
IRF7853PbF
2www.irf.com
S
D
G
St
a
ti
c
@ T
J
=
25°C (
un
l
ess
o
th
erw
i
se
spec
ifi
e
d)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 14.4 18 mΩ
VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 V
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
D
ynam
i
c
@ T
J
=
25°C (
un
l
ess
o
th
erw
i
se
spec
ifi
e
d)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 11 ––– ––– S
QgTotal Gate Charge ––– 28 39
Qgs Gate-to-Source Charge ––– 7.8 ––– nC
Qgd Gate-to-Drain ("Miller") Charge ––– 10 –––
RGGate Resistance ––– 1.4 ––– Ω
td(on) Turn-On Delay Time ––– 13 –––
trRise Time ––– 6.6 –––
td(off) Turn-Off Delay Time ––– 26 ––– ns
tfFall Time ––– 6.0 –––
Ciss Input Capacitance ––– 1640 –––
Coss Output Capacitance ––– 310 –––
Crss Reverse Transfer Capacitance ––– 71 ––– pF
Coss Output Capacitance ––– 1600 –––
Coss Output Capacitance ––– 180 –––
Coss eff. Effective Output Capacitance ––– 320 –––
Avalanche Characteristics
Parameter Units
EAS Single Pulse Avalanche Energy
d
mJ
IAR Avalanche Current
c
A
Diode Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 2.3
(Body Diode) A
ISM Pulsed Source Current ––– ––– 66
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 45 68 ns
Qrr Reverse Recovery Charge ––– 84 130 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 20V
VGS = -20V
Max.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
g
VGS = 10V
f
VDD = 50V
ID = 5.0A
RG = 6.2Ω
TJ = 25°C, IS = 5.0A, VGS = 0V
f
TJ = 25°C, IF = 5.0A, VDD = 25V
di/dt = 100A/µs
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 8.3A
f
VDS = VGS, ID = 100µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 10V
f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
610
5.0
Typ.
–––
–––
Conditions
VDS = 25V, ID = 5.0A
ID = 5.0A
VDS = 50V
IRF7853PbF
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
vs. Temperature
0.01 0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 150°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
ID, Drain-to-Source Current
(Α)
VDS = 25V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 150°C
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 8.3A
VGS = 10V
IRF7853PbF
4www.irf.com
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 1020304050
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 5.0A
0 1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRF7853PbF
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1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z
thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 9. Maximum Drain Current vs.
Ambient Temperature
25 50 75 100 125 150
TC , CaseTemperature (°C)
0
2
4
6
8
10
ID , Drain Current (A)
Ri (°C/W) τi (sec)
7.016 0.00474
26.95 0.04705
16.04 2.3619
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci τi/Ri
Ci= τi/Ri
A
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6www.irf.com
Fig 13. On-Resistance vs. Gate Voltage
Fig 12. On-Resistance vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
1K
VCC
DUT
0
L
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
0 10203040506070
ID , Drain Current (A)
10
20
30
40
RDS (on) , Drain-to-Source On Resistance (
mΩ)
VGS = 10V
TC = 25°C
TC = 125°C
4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
10
15
20
25
30
35
40
RDS(on), Drain-to -Source On Resistance (
mΩ)
TJ = 25°C
TJ = 125°C
ID = 5.0A
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
0
500
1000
1500
2000
2500
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 0.23A
0.34A
BOTTOM 5.0A
IRF7853PbF
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SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MIL L I ME T E R SINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O J E DE C OU T L I NE MS -012AA.
NOT E S :
1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIME NS ION: MILL IME T ER
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES].
5 DIMENS ION DOE S NOT INCL UDE MOLD PROT RUS IONS .
6 DIMENS ION DOE S NOT INCL UDE MOLD PROT RUS IONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBST RATE.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
P = DE S IGNAT E S L E AD- F R E E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
IRF7853PbF
8www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 49mH,
RG = 25Ω, IAS = 5.0A.
When mounted on 1 inch square copper
board, t ≤ 10 sec.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Rθ is measured at TJ of approximately 90°C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/06
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
