Features
nExtremely Low Parasitic Capitance and Inductance
nSuface Mountable in Microwave Circuits , No
Wirebonds Required
nRugged HMIC Construction with Polyimide Scratch
Protection
nReliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C, 16 hours)
nLower Susceptibility to ESD Damage
Description
The MA4E2502 SurMountTM Series Diodes are Silicon Low,
Medium, and High Barrier Schottky Devices fabricated with
the patented Heterolithic Microwave Integrated Circuit
(HMIC) process. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, microstrip
transmission medium. The combination of silicon and glass
allows HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead device
coupled with the superior mechanical performance of a chip.
The SurMount structure employs very low resistance silicon
vias to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip. These
devices are reliable, repeatable, and a lower cost performance
solution to conventional devices. They have lower
susceptibility to electrostatic discharge than conventional beam
lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-hour
non-operating stabilization bake at 300 °C.
The “ 0502 ” outline allows for Surface Mount placement and
multi- functional polarity orientations.
Applications
The MA4E2502 Family of SurMount Schottky diodes are
recommended for use in microwave circuits through Ku band
frequencies for lower power applications such as mixers, sub-
harmonic mixers, detectors and limiters. The HMIC
construction facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount diode,
which can be connected to a hard or soft substrate circuit with
solder.
MA4E2502 Series
V 4.00
Case Style 1246
1
SURMOUNTTM Low, Medium and High
Barrier Silicon Schottky Diodes
A
A
B
C
D
E
D
Dim Inches Millimeters
Min. Max. Min. Max.
A 0.0445 0.0465 1.130 1.180
B 0.0169 0.0189 0.430 0.480
C 0.0040 0.0080 0.102 0.203
D Sq. 0.0128 0.325
E Sq. 0.0128 0.0148 0.325 0.375
0.0148 0.375
Surface Mount Low, Medium and High Barrier Schottky Diodes MA4E2502 Series
V 4.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
2
Electrical Specifications: @ 25 °C
Rt is the dynamic slope resistance where
Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)
Handling
All semiconductor chips should be handled with care to avoid
damage or contamination from perspiration and skin oils. The
use of plastic tipped tweezers or vacuum pickups is strongly
recommended for individual components. The top surface of
the die has a protective polyimide coating to minimize damage.
The rugged construction of these SurMount devices allows the
use of standard handling and die attach techniques. It is
important to note that industry standard electrostatic discharge
(ESD) control is required at all times, due to the sensitive
nature of Schottky junctions.
Bulk handling should insure that abrasion and mechanical
shock are minimized.
Die Bonding
Die attach for these devices is made simple through the use of
surface mount die attach technology. Mounting pads are
conveniently located on the bottom surface of these devices,
and are opposite the active junction. The devices are well
suited for high temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable
for usage.
For Hard substrates, we recommend utilizing a vacuum tip and
force of 60 to 100 grams applied uniformly to the top surface
of the device, using a hot gas bonder with equal heat applied
across the bottom mounting pads of the device. When soldering
to soft substrates, it is recommended to use a lead-tin interface
at the circuit board mounting pads. Position the die so that its
mounting pads are aligned with the circuit board mounting
pads. Reflow the solder paste by applying Equal heat to the
circuit at both die-mounting pads. The solder joint must Not be
made one at a time, creating un-equal heat flow and thermal
stress. Solder reflow should Not be performed by causing heat
to flow through the top surface of the die. Since the HMIC
glass is transparent, the edges of the mounting pads can be
visually inspected through the die after die attach is completed.
Parameter Value
Operating Temperature -40 °C to +150 °C
Storage Temperature -40 °C to +150 °C
Forward Current 20 mA
Reverse Voltage 5 V
RF C.W. Incident Power + 20 dBm
RF & DC Dissipated Power 50 mW
Absolute Maximum1
1. Exceeding any of these values may result in permanent
damage
Model
Number Type Recommended
Frequency
Range
Vf @ 1 mA
( mV ) Vb @ 10 uA
( V ) Ct @ 0V
( pF ) Rt Slope Resistance
( Vf1 - Vf2 )/(10.5mA-9.5mA )
( Ω )
MA4E2502L Low
Barrier DC - 18 GHz 330 Max
300 Typ
3 Min
5 Typ 0.12 Max
0.10 Typ 16 Typ
20 Max
MA4E2502M Medium
Barrier DC - 18 GHz 420 Max
400 Typ 3 Min
5 Typ 0.12 Max
0.10 Typ 12 Typ
18 Max
MA4E2502H High
Barrier DC - 18 GHz 700 Max
650 Typ 3 Min
5 Typ 0.12 Max
0.10 Typ 11 Typ
15 Max
Surface Mount Low, Medium and High Barrier Schottky Diodes MA4E2502 Series
V 4.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
3
MA4E2502H High Barrier SPICE PARAMETERS
Is
(nA) Rs
( Ω ) N Cj0
( pF ) M Ik
(mA) Cjpar
(pF) Vj
(V) FC BV
(V) IBV
(mA)
5.7 E-2 6.5 1.20 1.0 E-02 0.5 4 9.0 E-2 8.0 E-2 0.5 5.0 1.0 E-2
MA4E2502L Low Barrier SPICE PARAMETERS
Is
(nA) Rs
( Ω ) N Cj0
( pF ) M
Ik
(mA) Cjpar
(pF) Vj
(V) FC BV
(V) IBV
(mA)
26 12.8 1.20 1.0 E-2 0.5 14 9.0 E-2 8.0 E-2 0.5 5.0 1.0 E-2
Circuit Mounting Dimensions (Inches)
MA4E2502M Medium Barrier SPICE PARAMETERS
Is
(nA) Rs
( Ω ) N Cj0
( pF ) M Ik
(mA) Cjpar
(pF) Vj
(V) FC BV
(V) IBV
(mA)
5 E-1 9.6 1.20 1.0 E-02 0.5 10 9.0 E-2 8.0 E-2 0.5 5.0 1.0 E-2
0.020
0.020
0.013
0.020
0.020
Surface Mount Low, Medium and High Barrier Schottky Diodes MA4E2502 Series
V 4.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
4
Ordering Information
Part Number Package
MA4E2502L-1246W Wafer on Frame
MA4E2502L-1246 Die in Carrier
MA4E2502L-1246T Tape/Reel
MA4E2502M-1246W Wafer on Frame
MA4E2502M-1246 Die in Carrier
MA4E2502M-1246T Tape/Reel
MA4E2502H-1246W Wafer on Frame
MA4E2502H-1246 Die in Carrier
MA4E2502H-1246T Tape/Reel
