GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
NPT2021
1
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Ordering Information
Part Number Package
NPT2021 Bulk Quantity
NPT2021-SMBPPR Sample Board
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 2.5 GHz
48 V Operation
16.5 dB Gain at 2.5 GHz
55 % Drain Efficiency at 2.5 GHz
100 % RF Tested
TO-272 Package
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2021 GaN HEMT is a wideband transistor
optimized for DC - 2.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W in an industry standard
plastic package with bolt down flange.
The NPT2021 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Pin Configuration
Functional Schematic
Pin No. Pin Name Function
1 RFIN / VG RF Input / Gate
2 RFOUT / VD RF Output / Drain
3 Pad1 Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
1
3
2
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
NPT2021
2
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
RF Electrical Specifications: TC = 25C, VDS = 48 V, IDQ = 350 mA
Parameter Test Conditions Symbol Min. Typ. Max. Units
Small Signal Gain CW, 2.5 GHz GSS - 14.2 - dB
Saturated Output Power CW, 2.5 GHz PSAT - 47.5 - dBm
Drain Efficiency at Saturation CW, 2.5 GHz SAT - 65 - %
Power Gain 2.5 GHz, POUT = 45 W GP 12 12.8 - dB
Drain Efficiency 2.5 GHz, POUT = 45 W 45 50 - %
Ruggedness: Output Mismatch All phase angles VSWR = 15:1, No Device Damage
DC Electrical Characteristics: TC = 25C
Parameter Test Conditions Symbol Min. Typ. Max. Units
Drain-Source Leakage Current VGS = -8 V, VDS = 160 V IDLK - - 14 mA
Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 7 mA
Gate Threshold Voltage VDS = 48 V, ID = 14 mA VT -2.5 -1.8 -0.5 V
Gate Quiescent Voltage VDS = 48 V, ID = 350 mA VGSQ -2.1 -1.5 -0.3 V
On Resistance VDS = 2 V, ID = 105 mA RON - 0.34 -
Saturated Drain Current VDS = 7 V pulsed, pulse width 300 µs ID(SAT) - 8.2 - A
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
NPT2021
3
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2. Exceeding any one or combination of these limits may cause permanent damage to this device.
3. MACOM does not recommend sustained operation near these survivability limits.
4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Parameter Absolute Maximum
Drain Source Voltage, VDS 160 V
Gate Source Voltage, VGS -10 to 3 V
Gate Current, IG 24 mA
Junction Temperature, TJ +200°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Parameter Test Conditions Symbol Typical Units
Thermal Resistance VDS = 48 V, TJ = 200°C RJC 1.60 °C/W
Thermal Characteristics5
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
Absolute Maximum Ratings2,3,4
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
NPT2021
4
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Frequency
(MHz) ZS
()
ZL
()
PSAT
(W)
GSS
(dB)
Drain Efficiency
@ PSAT (%)
900 1.1 + j0.7 7.3 + j5.5 74 24 68
2000 1.4 - j6.1 2.9 + j2.4 65 17 68
2500 1.5 - j7.6 2.3 + j0.6 64 14 65
Load-Pull Performance: VDS = 48 V, IDQ = 350 mA, TC = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Gain vs. Output Power Drain Efficiency vs. Output Power
Impedance Reference ZS and ZL vs. Frequency
ZSZL
12
14
16
18
20
22
24
25 30 35 40 45 50
900 MHz
2000 MHz
2500 MHz
Gain (dB)
Output Power (dBm)
0
10
20
30
40
50
60
70
25 30 35 40 45 50
900 MHz
2000 MHz
2500 MHz
Drain Efficiency (%)
Output Power (dBm)
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
NPT2021
5
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Parts measured on evaluation board (30-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
Matching is provided using a combination of
lumped elements and transmission lines as shown
in the simplified schematic above. Recommended
tuning solution component placement, transmission
lines, and details are shown on the next page.
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
Description
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Bias Sequencing
C14
3.0 pF
C4
1000 pF
C3
0.01 mF
C2
0.1 mF
C1
1.0 mF
VGS VDS
C16
0.5 pF
C15
2.4 pF
RF
Out
NPT2021
C5
1.0 mF
C6
0.1 mF
C7
0.01 mF
C8
1000pF
C13
0.5 pF
RF
In
C9
10 pF
C11
18 pF
C12
18 pF
R1
24.9
L1
22 nH
C10
15 pF
R2
0
C17
2.4 pF
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
NPT2021
6
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Reference Value Tolerance Manufacturer Part Number
C1, C5 1.0 µF 10 % AVX 1210C105KAT2A
C2, C6 0.1 µF 10 % Kemet C1206C104K1RACTU
C3, C7 0.01 µF 10 % AVX 12061C103KAT2A
C4, C8 1000 pF 10 % Kemet C0805C102K1RACTU
C9 10 pF 5 % ATC ATC800A100J
C10, C11 18 pF 10 % ATC ATC800B180K
C12 3.6 pF 0.1 pF Murata GQM22M5C2H3R6BB01
C13 1.5 pF 0.1 pF Murata GQM22M5C2H1R5BB01
C14, C15 2.4 pF 0.1 pF ATC ATC800B2R4B
L1, L2 22 nH 5% Coilcraft 0807SQ-22N_LB
R1 24.9 Ω 1 % Panasonic ERJ-SIDF49R9U-ND
PCB Rogers RO4350, r = 3.5, 30 mil
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
Parts list
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
NPT2021
7
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Typical Performance as measured in the 2.5 GHz evaluation board:
CW, VDS = 48 V, IDQ = 350 mA (unless noted)
Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature
Quiescent VGS vs. Temperature
0
10
20
30
40
50
60
70
25 30 35 40 45 50
+25°C
-40°C
+85°C
Drain Efficiency (%)
Output Power (dBm)
-1.6
-1.5
-1.4
-1.3
-1.2
-1.1
-50 -25 0 25 50 75 100
175 mA
350 mA
525 mA
VGSQ (V)
Temperature (°C)
11
12
13
14
15
16
25 30 35 40 45 50
+25°C
-40°C
+85°C
Gain (dB)
Output Power (dBm)
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
NPT2021
8
8
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2-Tone IMD vs. Output Power
2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current
Typical 2-Tone Performance as measured in the 2.5 GHz evaluation board:
1 MHz Tone Spacing, VDS = 48 V, IDQ = 350 mA, TC = 25°C (unless noted)
-55
-50
-45
-40
-35
-30
-25
-20
-15
110 100
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
IMD (dBc)
POUT (W-PEP)
-50
-45
-40
-35
-30
-25
-20
-15
110 100
250mA
350mA
450mA
550mA
650mA
IMD (dBc)
POUT (W-PEP)
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
NPT2021
9
9
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
TO-272-2 Plastic Package†
† Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn .
All dimensions shown as inches [millimeters].