AOD492 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 4.4m (VGS = 10V) RDS(ON) < 6.2m (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D D Bottom View SRFETTM Soft Recovery MOSFET: G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current B Integrated Schottky Diode H Maximum 30 Units V 20 V 85 TC=100C A ID 66 Pulsed Drain CurrentC IDM 200 Avalanche Current C IAR 30 A EAR 135 mJ Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B C TA=25C Power Dissipation A Junction and Storage Temperature Range Maximum Junction-to-Case D 2.5 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.6 TJ, TSTG t 10s Steady-State Steady-State W 50 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 100 PD TC=100C RJA RJC Typ 14 39 0.8 C Max 20 50 1.5 Units C/W C/W C/W www.aosmd.com AOD492 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage On state drain current VDS=VGS ID=250A 1.2 VGS=10V, VDS=5V 200 TJ=125C VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Diode Continuous Current H DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 20 mA 0.1 A 1.5 2.2 V 3.6 4.4 6.1 7.7 5 6.2 m 0.5 V 85 A A 90 0.36 3760 VGS=0V, VDS=15V, f=1MHz Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ m S 4512 pF 682 pF 314 pF 0.75 1.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 62 74 nC Qg(4.5V) Total Gate Charge 29 35 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 12 nC 12 nC 9.5 ns VGS=10V, VDS=15V, RL=0.75, RGEN=3 8.5 ns 34 ns 9 ns IF=20A, dI/dt=300A/s 18 Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/s 22 Body Diode Reverse Recovery Time 27 ns nC A: The value of RJA is measured with the device in a still air environment with T A =25C. The power dissipation P DSM is based on TJ(MAX)=150 C, using t 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev2: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD492 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 30 10V 8V 180 160 4.5V VDS=5V 25 6V 140 4.0V 20 ID(A) ID (A) 120 100 3.5V 80 125 15 25C 10 60 40 VGS=3.0V 5 20 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 2 7 RDS(ON) (m ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 8 6 VGS=4.5V 5 4 3 VGS=10V 2 ID=20A VGS=10V 1.8 nC 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 210 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 10 1.0E+02 ID=20A 9 1.0E+01 8 125C 1.0E+00 25C 125C 7 IS (A) RDS(ON) (m ) 2 6 1.0E-01 1.0E-02 5 1.0E-03 4 25C 3 1.0E-04 2 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD492 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6.00E-09 10 5.00E-09 VDS=15V ID=20A 6 Capacitance (nF) VGS (Volts) 8 4 2 3.00E-09 2.00E-09 Coss Crss 1.00E-09 0 0.00E+00 0 10 20 30 40 50 60 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10s 100 1ms RDS(ON) limited 10.0 10ms DC 1.0 TJ(Max)=175C TC=25C 0.1 0.0 0.01 0.1 180 Power (W) 100.0 ID (Amps) Ciss 4.00E-09 TJ(Max)=175C TC=25C 160 nC 140 120 100 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 80 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJc.RJc RJC=1.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD492 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TC=25C 100 80 Power Dissipation (W) ID(A), Peak Avalanche Current 120 TC=150C 60 40 20 0 1.0E-07 1.0E-06 1.0E-05 1.0E-04 110 100 90 80 70 60 50 40 30 20 10 0 0 1.0E-03 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 90 160 80 140 TJ(Max)=150C TA=25C 70 120 60 Power (W) Current rating ID(A) 25 50 40 30 80 60 20 40 10 20 0 0 25 50 75 100 125 150 nC 100 0 0.01 175 TCASE (C) Figure 14: Current De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) Z JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD492 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 0.8 VSD(V) 1.0E-02 IR (A) VDS=24V 1.0E-03 VDS=12V 0.7 20A 0.6 10A 0.5 5A 0.4 0.3 1.0E-04 IS=1A 0.2 0.1 0 1.0E-05 0 0 50 100 150 200 Temperature (C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 48 50 100 150 200 Temperature (C) Figure 18: Diode Forward voltage vs. Junction Temperature 12 18 2.40 di/dt=1000A/us 11 di/dt=1000A/us 125C 12 25C 24 Qrr 9 125C 16 Irm (A) 32 trr (ns) 10 Qrr (nC) 2.10 15 Irm 25C 8 9 nC 1.50 8 1.20 7 6 1.80 25C trr 25C S 0.90 6 0.60 5 3 0.30 125C 4 0 0 5 10 15 20 25 30 Is (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 40 15 Is=20A 5 10 15 20 25 30 Is (A) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 18 2.50 125C Is=20A 125C 16 12 2.00 14 25C 125C 16 6 25C Qrr 8 trr (ns) 25C 9 Irm (A) 24 1.50 12 S 32 Qrr (nC) 0.00 0 0 S 40 125C 10 25C 8 125C trr S 3 1.00 0.50 6 Irm 0 0 600 800 1000 1200 di/dt (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt 0 200 400 Alpha & Omega Semiconductor, Ltd. 4 0 200 400 600 800 1000 0.00 1200 di/dt (A) Figure 22: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com AOD492 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com